NanoLab Publications
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Articles
304. U. Hommerich, Ei Ei Nyen, D. S. Lee, A. J. Steckl, and J. M. Zavada, “Photoluminescence Properties of In-Situ Tm-Doped AlGaN”, Appl. Phys. Lett. Vol. 83 (22), pp. 4556-4558, Dec. 2003 303. U. Hömmerich, E. E. Nyein, D. S. Lee, J. Heikenfeld, A. J. Steckl, J. M. Zavada, "Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN", Materials Science and Engineering B105, pp.91-96, 2003. 302. C. Munasinghe, J. Heikenfeld, R. Dory, R. Whatmore, J. Bender, J. Wager, and A. J. Steckl, “High Brightness ZnS and GaN Electroluminescent Devices Using PZT Thick Dielectric Layers”, IEEE Trans. Electron Devices, Vol.52(2), pp.194-203, Feb. 2005. 301. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee, A. J. Steckl, "New Spectroscopic Data of Erbium Ions in GaN Thin Films," Materials Science and Engineering B105, pp.126-131, 2003. 300. J. Heikenfeld, A. J. Steckl, "Inorganic EL Display at the Crossroads," Information Display, pp. 20-15, Dec. 2003. 299. J. C. Heikenfeld and A. J. Steckl, “Performance Characteristics of Black Dielectric EL Displays for Broad Vehicular Usage”, Proc. SID Vehicular Display Symp., Oct. 2003. 298. C. C. Baker, J. C. Heikenfeld, and A. J. Steckl, “Optical Amplification at 1.5 µm in Zn2Si0.5Ge0.5O4:Er Thin Film Channel Waveguides on Oxidized Silicon”, IEEE Photonics Tech. Lett. (submitted). 297. D. S. Lee and A. J. Steckl, "Enhanced Blue Emission From Tm-doped AlxGa1-xN Electroluminescent Thin Films", Appl. Phys. Lett. Vol.83(11), pp.2094-2096, 15 Sept. 2003. 296. J. Heikenfeld, R. A. Jones, and A. J. Steckl, “Black Dielectric Electroluminescent 160´80 Pixel Display”, Soc. Info. Display, Vol. 35-2, pp. 1110-1113, May 2003. 295. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee and A. J. Steckl, “New Spectroscopic Data of Erbium Ions in GaN Thin Films”, Electrochem. Soc. Proc. Vol. 2003-04: pp. 235-257, April 2003. 294. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee, and A. J. Steckl, “Fluorescence Dynamics of Er3+ Ions in MBE-Grown GaN Thin Films”, NATO Science Series Vol: Physics of Laser Crystals, 2003. 293. E.E. Nyein, U. Hömmerich, J. Heikenfeld, D.S. Lee, A.J. Steckl, J.M. Zavada, "Spectral and time-resolved photoluminescence studies of Eu-doped GaN," Appl. Phys. Lett. Vol.82(11), pp.1655-1657, 17 March 2003. 292. R. Jones, J. C. Heikenfeld and A. J. Steckl, “Rare Earth Doped GaN Black Dielectric Electroluminescent Technology for Full-Color, High-Contrast Display Applications,” Proc. SID Vehicular Display 2002 Symp. 291. J. C. Heikenfeld, R. Jones and A. J. Steckl, “Matrix Addressed Black Dielectric Electroluminescent Displays for Automotive Use,” Proc. SID Vehicular Display 2002 Symp. 290. A. J. Steckl, J. C. Heikenfeld, D. S. Lee, Y. Q. Wang, and R. Jones, “Rare-earth-doped GaN Phosphors: Growth, Properties and Fabrication of Electroluminescent Devices,” Proc. Electroluminescence 2002, Ghent, Belgium, Sept. 2002. 289. D. S. Lee and A. J. Steckl, "Selective Enhancement of Blue Electroluminescence from GaN:Tm," Appl. Phys. Lett. Vol. 82(1), pp. 55-57, 06 Jan. 2003. 288. D. S. Lee and A. J. Steckl, “Enhanced Blue and Green Emission in Rare-Earth-Doped GaN Electroluminescent Devices by Optical Photopumping,” Appl. Phys. Lett. Vol. 81 (13), pp. 2331-2333, 23 Sept. 2002. 287. J. Zavada, U. Hommerich, and A. J. Steckl, “Excitation mechanisms of rare earth ions embedded in GaN thin films,” Electrochem. Soc. Meeting Proc. Vol. 2002-3, May 2002. 286. J. C. Heikenfeld and A. J. Steckl, “High Contrast Thick Dielectric GaN Electroluminescent Displays on Glass Substrates,” 2002 Soc. Information Displays Int’l. Symp. Digest, Vol. 33 (1), pp. 96-99, May 2002. 285. J. Cheng and A. J. Steckl, “Focused Ion Beam Fabricated Microgratings for Integrated Optics Applications,” IEEE J. Selected Topics in Quantum Electronics, Vol. 8 (6), Nov/Dec. 2002. 284. A. J. Steckl, J. C. Heikenfeld, D. S. Lee, M. Garter, C. C. Baker, Y. Q. Wang, and R. Jones, Invited Paper, “Rare-earth-doped GaN: Growth, Properties and Fabrication of Electroluminescent Devices,” IEEE J. Selected Topics in Quantum Electronics, Vol. 8 (4), pp.749-766, July/Aug. 2002. 283. Y. Wang and A. J. Steckl, "Three-color Integration on Rare-earth Doped GaN Electroluminescent thin Films," Appl. Phys. Lett. Vol. 82(3), 20 Jan. 2003. 282. M. Pan and A. J. Steckl, "Red Emission from Eu-doped GaN Luminescent Films Grown by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett. Vol. 83 (1), pp. 9-11, 7 July 2003 281. C. C. Baker, J. C. Heikenfeld, and A. J. Steckl, “Photoluminescent and Electroluminescent Zn2Si0.5Ge0.5O4:Mn Thin Films for Integrated Optic Systems,” IEEE J. Selected Topics in Quantum Electronics, IEEE J. Selected Topics in Quantum Electronics, Vol. 8 (6), Nov/Dec. 2002. 280. P. Rack, J. Heikenfeld, and A. J. Steckl, "Inorganic Electroluminescent Displays," Chapter in Handbook of Luminescence and Display Materials and Devices, H.S. Nalwa, ed., American Scientific Publ. (CA), 2003 279. D. S. Lee and A. J. Steckl, “Lateral Color Integration on Rare-Earth-Doped GaN Electroluminescent Thin Films,” Appl. Phys. Lett. Vol. 80, pp. 1888-1890, Mar. 18, 2002. 278. A. J. Steckl, J. Heikenfeld and D. S. Lee, “Rare-Earth-Doped GaN Phosphors for Electroluminescent Displays,” Proc. Int’l. Conf.Sci. Tech. Emissive Displays, pp.95-98, Nov. 2001. 277. L. Cheng, M. Pan, J. D. Scofield, A. J. Steckl, “Growth and Doping of SiC Thin Films on Low-Stress, Amorphous Si3N4/Si Substrate for Robust MEMS Applications,” J. Electronic Materials, Vol. 31, No.5, pp. 361-365, May 2002. 276. J. Heikenfeld and A. J. Steckl, “Low Cost Display Technology Utilizing Thick Dielectric Electroluminescent Devices on Glass Substrates,” Proc. SID Symp. Vehicle Displays, ISBN # 0966030761, pp. 12-15, Oct. 2001. 275. J. T. Seo, U. Hommerich, D.C. Lee, J. Heikenfeld, A. J. Steckl and J. M. Zavada, “Thermal Quenching of Photoluminescence from Er-doped GaN Thin Films,” J. Alloys & Compounds, Vol. 341, pp. 62-66, July 2002. 274. D. S. Lee and A. J. Steckl, “Ga Flux Dependence of Er-Doped GaN Luminescent Thin Films,” Appl. Phys. Lett. Vol. 80, pp. 728-730, Feb. 4, 2002. 273. D.S. Lee and A. J. Steckl, “Growth-Temperature Dependence of Er-Doped GaN Luminescent Thin Films,” Appl. Phys. Lett. Vol. 80, pp. 344-346, Jan. 21, 2002. 272. J. Heikenfeld and A. J. Steckl, “Contrast Enhancement in Black Dielectric Electroluminescent Devices,” IEEE Trans. Electr. Dev. Vol. 49, No. 8, pp. 1348-1352, Aug. 2002. 271. D.S. Lee and A. J. Steckl, “Room-Temperature-Grown Rare-Earth-Doped GaN Luminescent Thin Films,” Appl. Phys. Lett. Vol. 79, pp. 1962-1964, Sept. 24, 2001. 270. I. Chyr and A. J. Steckl, “GaN Focused Ion Beam Micromachining with Gas-Assisted Etching,” J. Vac. Sci. Tec., Vol. 19 (6), pp. 2547-2550, Nov. 2001. 269. J. Cheng and A. J. Steckl, “Mg-Ga Liquid Metal Ion Source for Implantation-Doping of GaN,” J. Vac. Sci. Tec., Vol. 19 (6), pp.2551-2554, Nov. 2001. 268. R. C. J. Chi and A. J. Steckl, "Principles, Fabrication, and Detection Methods for the Digital Thin-Film Color Optical Memory Device," Applied Optics 267. M. Garter and A. J. Steckl, “Temperature Behaviour of Visible and Infrared Electroluminescent Devices Fabricated on Er-doped GaN,” IEEE Trans. Electr. Dev. Vol. 49 (1), pp. 48-54, Jan. 2002. 266. D. S. Lee, J. Heikenfeld, A. J. Steckl, U. Hommerich, J. T. Seo, A. Braud, and J. M. Zavada, “Optimum Er Concentration for In-Situ Doped GaN Visible and Infrared Luminescence,” Appl. Phys. Lett. Vol. 79, pp. 719-721, Aug. 6, 2001. 265. B. K. Lee, C. J. Chi, I. Chyr, D. S. Lee, F. J. Beyette, and A. J. Steckl, “In-situ Er-doped GaN Optical Memory Devices Using High Resolution Focused Ion Beam Milling,” Optical Engineering Lett. Vol. 41, No. 4, pp. 742-743, April 2002. 264. J. Heikenfeld and A. J. Steckl, "Electroluminescent Devices on Glass Using a High Temperature Stable GaN-based Phosphor and Thick Film Dielectric," IEEE Trans. Electr. Dev., Vol. 49(4), pp. 557-563, April 2002. 263. A. M. Mitofsky, G. C. Pappen, S. G. Bishop, D. S. Lee and A. J. Steckl, “Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er,” Proc. 2000 MRS GaN Symp. Vol. 639, pp. G10.26.1-6, Oct. 2001. 262. J. Heikenfeld and A. J. Steckl, “AC Operation of GaN:Er Thin Film Electroluminescent Display Devices,” Mat. Res. Soc. Symp., Vol. 639, pp. G10.4.1-6, Oct. 2001. 261. C. J. Chi and A. J. Steckl, “Digital Thin Film Color Optical Memory,” Appl. Phys. Lett. Vol. 78, pp. 255-257, Jan.8, 2001. 260. B. K. Lee, C. J. Chi, L. C. Chao, J. Cheng, I. Chyr, F. J. Beyette, and A. J. Steckl, “High Density Er-implanted GaN Optical Memory Devices,” Applied Optics, Vol. 40, pp. 3552-3558, July 20, 2001. 259. J. Heikenfeld and A.J. Steckl, "Alternating Current Thin Film Electroluminescence of GaN:Er," Appl. phys. Lett., Vol. 77, pp.3520-3522, Nov. 2000. 258. J. Heikenfeld and A. J. Steckl, “Rare-Earth-Doped GaN Switchable Color Electroluminescent Devices,” IEEE Trans. Electr. Dev. Vol. 49, pp. 1545-1551, Sept. 2002 257. A.J. Steckl, J. Heikenfeld, D.S. Lee and M. Garter, "Multiple Color Capability from Rare Earth Doped Gallium Nitride," Materials Science & Eng. B, Vol. 81/1-3, pp. 97-101, May 2001. 256. U. Hommerich, J.T. Seo, C.R. Abernathy, A.J. Steckl and J.M. Zavada, "Spectroscopic Studies of the Visible and Infrared Luminescence form Er-doped GaN," Materials Science & Eng. B, Vol. 81/1-3, pp. 116-120, May 2001. 255. L. C. Chao and A. J. Steckl, “Annealing-Activated Site Transition of Upconversion from Er-doped GaN,” Appl. Phys. Lett. 254. R. Sivaraman, S.J. Clarson, B.K. Lee, A.J. Steckl, B.A. Reinhardt, "Photoluminescence Studies and Read/Write Process of a Strong Two-Photon Absorption Chromophore," Appl. Phys. Lett., Vol. 77, pp.328-330, July 2000. 253. A.J. Steckl, F. Beyette, J.T. Boyd, S.J. Clarson, H.E. Jackson, S.T. Kowell, "Selected Topics in Photonics/Optoelectronics Research at the University of cincinnati," IEEE LEOS Newsletter, Vol. 14 (1), pp. 3-9, Feb. 2000. 252. J. Tang, B. Sheshadri, K.N. Naughton, B.K. Lee, R.C. Chi, A.J. Steckl and F.R. Beyette, "CMOS Based Photoreceiver Arrays for Page-Oriented Optical Storage Access," IEEE Photonics Tech. Lett., Vol. 12 (9), pp. 1234-1236, Sept. 2000. 251. A.J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn and D.S. Lee, "Rare Earth Doped Gallium Nitride - Light Emission From Ultraviolet to Infrared," Compound Semiconductor, Vol. 6 (1), pp.48-52, Feb./March 2000. 250. P.H. Citrin, P.A. Northrup, R. Birkhahn and A.J. Steckl, "Local Structure and Bonding of Er in GaN: A Contrast with Er in Si," Appl. Phys. Lett., Vol. 76, pp.2865-2867, May 15, 2000. 249. J. Heikenfeld, D.S. Lee, M. Garter, R. Birkhahn and A.J. Steckl, "Low Voltage GaN:Er Electroluminescent Devices," Appl. Phys. Lett., Vol. 76 (11), pp. 1365-1367, March 2000. 248. U. Hommerich, J.T. Seo, J.D. MacKenzie, C.R. Abernathy, R. Birkhahn, A.J. Steckl and J.M. Zavada, "Comparison of the Optical properties of Er-doped GaN Prepared by Metalorganic and Solid Source MBE," MRS Internet J. Nitride Semicond. Res., Vol. 5S1, W11.65, 2000. 247. J. Chen, A.J. Steckl, J. D. Scofield, "Formation of SiC SOI Structures by Direct Growth on Insulating Layers," J. Electrochem. Soc., Vol. 147 (10), pp. 3845-3849, Oct. 2000. 246. D.S. Lee, J. Heikenfeld, R. Birkhahn, M. Garter, and A.J. Steckl, "Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu," Appl. Phys. Lett., Vol. 76 (12), pp.1525-1527, March 2000. 245. J. Chen, A. J. Steckl, M. J. Loboda, "Growth and Characterization of N-Doped SiC Films from Trimethylsilane," Proc. Int’l. Conf. SiC and Related Materials, Material Science Forum, Vol. 338-342, pp.273-276, 2000. 244. L.C. Chao and A. J. Steckl, "CW Blue-Green Light Emission from GaN and SiC by Sum-Frequency Generation and Second Harmonic Generation," J. Electr. Mat., Vol. 29, pp.1059-1062, Sept. 2000. 243. I. Chyr, B. K. Lee, L.C. Chao, and A. J. Steckl, "Damage Generation and Removal in the Ga+ FIB Micromachining of GaN for Photonic Applications," J. Vac. Sci. Technol. B, Vol. 17 (6), pp. 3063-3067, Nov/Dec 1999. 242. L.C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I. Chyr, and A. J. Steckl, "Rare Earth FIB Implantation Utilizing Er and Pr Liquid Alloy Ion Sources," J. Vac. Sci. Technol. B, Vol. 17 (6), pp. 2791-2794, Nov/Dec 1999. 241. J. Zavada, U. Hommerich, and A. J. Steckl, “Light Emission from Rare Earth Doped GaN,” Chapter 9 in III-V Nitride Semiconductors: Optical Properties I, H. Jiang and M. O. Manasreh, Eds., Optical Properties of Semiconductors and Superlattices, Vol. 13, pp. 379-409, Taylor and Francis Publishers, 2002. 240. A. J. Steckl and J. M. Zavada, "Photonic Applications of Rare-Earth-Doped Materials," Mat. Res. Soc. Bulletin, Vol.24, No.9, pp. 16-17, September 1999. 239. L.C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I. Chyr, and A. J. Steckl, "Upconversion Luminescence of Er-Implanted GaN Films by FIB-Direct Write," Appl. Phys. Lett., Vol. 75, pp. 1833-1835, Sept. 27, 1999. 238. J. Heikenfeld, M. Garter, D. S. Lee, , R. Birkhahn, and A. J. Steckl, "Red Light Emission by Photoluminescence and Electroluminescence from Eu-doped GaN," Appl. Phys. Lett., Vol. 75, pp. 1189-1191, Aug. 30, 1999. 237. A. J. Steckl and J. M. Zavada, "Optoelectronic Properties and Applications of Rare-Earth-Doped GaN," Mat. Res. Soc. Bulletin, Vol.24, No.9, pp.33-38, September 1999. 236. A. J. Steckl, M. Garter, D. S. Lee, J. Heikenfeld, and R. Birkhahn, "Blue Electroluminescence from Tm-doped GaN Light Emitting Devices," Appl. Phys. Lett., Vol. 75, Oct. 11, 1999. 235. F. J. Pacheco, A. M. Sanchez, S. I. Molina, D. Araujo, R. Garcia, and A. J. Steckl, "Effect of Temperature Ramp Rate During Carbonization of Si (111) on the obtained SiC Crystalline Quality", Proc. Microscopy of Semicond. Materials XI Congress (Oxford, England), March 1999. 234. K. Lorenz, R. Vianden, R. Birkhahn, A. J. Steckl, M. F. da Silva, J. C. Soares, and E. Alves, "RBS/Channeling Study of Er-Doped GaN Films Grown by MBE on (111) Si Substrates," Nucl. Instr. & Methods B, Vol. 161/163, pp.946-951, March 2000. 233. J. Chen, A. J. Steckl, and M. J. Loboda, "In-Situ N2 Doping of SiC films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes," J. Electrochem. Soc., Vol. 147(6), pp.2324-2327, June 2000. 232. L.C. Chao and A.J. Steckl, "Room Temperature and Infrared Photoluminescence from Pr-Implanted GaN films by Focused Ion Beam Direct Write," Appl. Phys. Lett. Vol. 74, pp. 2364-2366, Apr. 19, 1999. 231. M. Garter, R. Birkhahn, A.J. Steckl and J.D. Scofield, "Visible and Infrared Rare-Earth Activated Electroluminescence from Erbium–doped GaN," MRS Internet J. Nitride Semicond. Res. 4S1, G11.3, 1999. 230. Chyr and A.J. Steckl, "Focused Ion Beam Micromachining of GaN Photonic Devices," MRS Internet J. Nitride Semicond. Res. 4S1, G10.7, 1999. 229. R.H. Birkhahn, R. Hudgins, D.S. Lee, A.J. Steckl, A. Saleh, R.G. Wilson and J.M. Zavada, "Optical and Structural Properties of Er3+ - Doped GaN Growth by MBE," MRS Internet J. Nitride Semicond. Res. 4S1, G3.80, 1999. 228. R.H. Birkhahn, R.A. Hudgins, D.S. Lee, A.J. Steckl, R.J. Molnar and J. M. Zavada, "Growth and Morphology of Er-doped GaN on Sapphire and HVPE Substrates," J. Vac. Sci. Technol.B, Vol. 17, pp. 1195-1199, May/Jun 1999. 227. L.C. Chao and A.J. Steckl, "Development of an Er-Ni Liquid Metal Ion Source," J. Vac. Sci. Technol. B Vol. 17, pp. 1056-1058, May 1999. 226. R.H. Birkhahn, M.J. Garter and A.J. Steckl, "Red Light Emission by Photoluminescence and Electroluminescence from Pr-doped GaN on Si Substrates," Appl. Phys. Lett. Vol. 74, pp. 2161-2163, Apr. 12, 1999. 225. F.J. Pacheco, A.M. Sanchez, S.I. Molina, D. Araujo, J. Devrajan, A.J. Steckl and R. Garcia, "Electron Microscopy Study of SiC Obtained by Carbonization of Si (111)," Thin Solid Films, Vol. 343-344, pp. 305-308, 1999. 224. M.J. Garter, J.D. Scofield, R.H. Birkhahn and A.J. Steckl, "Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si," Appl. Phys. Lett. Vol. 74, pp. 182-184, Jan. 1999. 223. R.H. Birkhahn and A.J. Steckl, "Green Emission from Er-doped GaN Grown by Molecular Beam Epitaxy on Si Substrates," Appl. Phys. Lett., Vol. 73, pp. 2143-2145, Oct. 1998. 222. A.J. Steckl, M.J. Garter, R.H. Birkhahn and J. Scofield, "Green Electroluminescence from Er-doped GaN Schottky Barrier Diodes," Appl. Phys. Lett., Vol. 73, pp. 2450-2452, Oct. 1998. 221. A.J. Steckl and I. Chyr, "Focused Ion Beam Micromiling of GaN," J. Vac. Sci. and Technol. B, Vol. 17, pp. 362-365, March/April 1999. 220. A.J. Steckl and R.H. Birkhahn, "Visible Emission from Er-doped GaN Grown by Solid Source Molecular Beam Epitaxy," Appl. Phys. Lett., Vol. 73, pp. 1700-1702, Sept. 1998. 219. V. Saxena, J.N. Su, and A.J. Steckl, "High Voltage Ni-SiC Schottky Diodes Utilizing Metal Field Plate Termination," IEEE Transactions on Electron Devices, Vol. 146, pp. 456-464, March 1999. 218. B. Lee, A.J. Steckl, J.M. Zavada and R.G. Wilson, "The Effect of Hydrogen/Deuterium Introduction in Photoluminescence of 3C-SiC Crystals," Materials Res. Soc. Proc., May 1998. 217. S. Madapura, A.J. Steckl and M.J. Loboda, "High Growth Rate of Silicon Carbide on Silicon (111) Substrates by Chemical Vapor Deposition Using Trimethylsilane," Proc. 8th Int’l. Symp. on Si Matls. Sci. and Tech., H.R. Huff, H. Tsuya and U. Gösele, eds., Electrochemical Society Meeting, PV98-1, pp. 1433-1445, San Diego, CA, May 1998. 216. S. Madapura, A.J. Steckl and M.J. Loboda, "Heteroepitaxial Growth of SiC (100) and (111) by CVD using Trimethylsilane," J. Electrochemical Society, Vol. 146, pp. 1197-1202, March 1999. 215. J. Chen, A.J. Steckl and M.J. Loboda, "MBE Growth of SiC on Si (111) with SCB," J. Vacuum Science and Technology B, Vol. 16, pp. 1305-1308 (May/June 1998). 214. V. Saxena and A.J. Steckl, "Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts and p-n Junctions," Chapter 3 in Silicon Carbide Materials and Devices, Y.S. Park, Ed., Vol. 52 in Semiconductors and Semimetals, R.K. Willardson and E.R. Weber, eds., Academic Press, May 1998. 213. V. Saxena, A.J. Steckl, "High Temperature Operation of 4H and 6H SiC High Voltage Schottky Diodes," Invited Paper, Proc. Int’l. Semiconductor Device Research Symposium, pp. 539-542, Charlottesville, VA, Dec. 1997. 212. J. Chen, A.J. Steckl, and M.J. Loboda, "Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane," Proc. Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Material Science Forum, Vol. 264-268, pp. 239-242, 1998. 211. V. Saxena, A.J. Steckl, "High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization," Proc. Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Material Science Forum, Vol. 264-268, pp. 937-940, 1998 210. V. Saxena, A.J. Steckl, "Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3," Proc. Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Material Science Forum, Vol. 264-268, pp. 829-832, 1998 209. J. Devrajan, A.J. Steckl, C. Tran, and R.A. Stall, "Optical Properties of GaN Films Grown on SiC/Si," Proc. Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Material Science Forum, Vol. 264-268, pp. 1149-1152, 1998. 208. P.H.Yih, V. Saxena, and A.J. Steckl, "A Review of SiC Reactive Ion Etching in Fluorinated Plasmas," Invited paper, Physica Status Solidi B, Vol. 202, pp. 605-642, July 1997. 207. A.J. Steckl, "Exploring the Frontiers of Optoelectronics with FIB Technology," Proceedings of the Advanced Workshop on the Frontiers in Electronics, IEEE Cat. No. 97TH8292, pp. 47-50, 1997. 206. D.H. Naghski, J.E. Boyd, H.E. Jackson and A.J. Steckl, "Potential for Size Reduction of AlGaAs Optical Channel Waveguide Structures Fabricated by Focused Ion Beam Implantation and Oxidation," Optics Communications, Vol. 150 (1-6), pp. 97-100, May 1998. 205. A.J. Steckl, J. Devrajan, C. Tran, and R.A. Stall, "Growth and Characterization of GaN Thin Films on SiC SOI Substrates," Journal of Electronic Materials, Vol. 26, pp. 217-223, March 1997. 204. Ferguson, C. Tran, R. Karlicek, R. Stall, J. Devrajan and A.J. Steckl, "The Growth of GaN on 3C SiC SOI compliant substrates," Proc. 23rd Int. Symp. Compound Semiconductors (1996). 203. A.J. Steckl, J. Devrajan, S. Tlali, H.E. Jackson, C.Tran, S. Gorin, and L. Ivanova, "Characterization of 3C-SiC Crystals grown by Thermal Decomposition from Methyltrichlorosilane," Applied Physics Letters, Vol. 69, pp. 3824 - 3826, Dec. 1996. 202. V. Saxena, A.J. Steckl, M. Vichare, M.L. Ramalingam and K. Reinhart, "Temperature Effects in the Operation of High Voltage Ni/6H-SiC Schottky Rectifiers," Transactions of Third International Conference on High Temperature Electronics, pp. VII. 15 - VII. 20, 1996. 201. A.J. Steckl, J. Devrajan, C. Tran and R.A. Stall, "SiC RTCVD Carbonization of the (111) Si SOI structures and subsequent MOCVD growth of GaN," Applied Physics Letters, Vol. 69, pp. 2264-2266, Oct. 1996. 200. S.R. Smith, A.O. Evwaraye, A.J. Steckl, C. Yuan, W.C. Mitchel and M.D. Roth, "Determination of the Conduction Band Discontinuity in n-type 3C-SiC/6H-SiC Heterojunction," Institute of Physics Conference Series, Vol. 142, pp. 317 - 319, 1996. 199. A.J. Steckl, C. Yuan, J. Devrajan, J.C. Chaudhuri, R. Thokala and M.J. Loboda, "Growth of SiC by CVD from Silacyclobutane," Institute of Physics Conference Series, Vol. 142, pp. 181 - 184, 1996. 198. P.H. Yih, V. Saxena and A.J. Steckl, "6H-SiC Reactive Ion Etching for the Fabrication of Semiconductor Devices," Institute of Physics Conference Series, Vol.142, pp. 621-624, 1996. 197. J.N. Su and A.J. Steckl, "Fabrication of High Voltage SiC Schottky Barrier Diodes by Ni Metallization," Institute of Physics Conference Series, Vol. 142, pp. 697-700, 1996. 196. V. Saxena, A.J. Steckl and G. Bordonaro, "Sub-Micron Patterning of 6H-SiC by Anisotropic Reactive Ion Etching," Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices, Electrochemical Society Proceedings, Vol. 95-21, pp. 247-249, October 1995. 195. J. Chaudhuri, X. Chang, C. Yuan and A.J. Steckl, "Highly Perfect Thin Films of SiC - X-ray Double Crystal Diffractometry and X-ray Double Crystal Topographic Study," Thin Solid Films, Vol. 292, pp. 1-6, Jan. 1997. 194. A.J. Steckl, P. Chen, H.E. Jackson, A.G. Choo, X. Cao, J.T. Boyd and M. Kumar, "Review of Focused Ion Beam Implantation Mixing for the Fabrication of GaAs-Based Optolectronic Devices," Journal of Vacuum Science and Technology B, Vol. 13, pp. 2570-2575, Nov./Dec. 1995. 193. J.N. Su and A.J. Steckl, "300°C Operation of High Voltage SiC Schottky Rectifier," Proceedings of Workshop on High Temperature Power Electronics, pp. 50-53, April 1995. 192. H.E. Jackson, X. Cao, A.G. Choo, L.M. Smith, P. Chen and A.J. Steckl, "Anisotropic Exciton Diffusion in FIB-Patterned AlGaAs/GaAs Multiple Quantum Well Wire-Like Structures," Proceedings of the 22nd International Conference on the Physics of Semiconductors," D. Lockwood, ed., p. 1723, World Scientific, Singapore (1995). 191. A.J. Steckl, J. Devrajan, W.J. Choyke, R.P. Devaty, M. Yoganathan and S.W. Novak, "Effect of Annealing Temperature on 1.5 µm Photoluminescence at 25°C from Er-Implanted 6H-SiC," Journal of Electronic Materials., Vol. 25, pp. 869-873, May 1996. 190. C. Yuan, A.J. Steckl, J. Chaudhari, R. Thokola and M.J. Loboda, "Reduced Temperature Growth of Crystalline 3C-SiC Films on 6H-SiC by Chemical Vapor Deposition from Silacyclobutane," Journal of Applied Physics, Vol. 78, pp. 1271-1273, July 1995. 189. P.H. Yih and A.J. Steckl, "Residue-Free Reactive Ion Etching of 3C- and 6H-SiC in Fluorinated Mixture Plasmas," Journal of the Electrochemical Society, Vol. 142, pp. 2853-2860, August 1995. 188. A.J. Steckl, P. Chen, X. Cao, H.E. Jackson, M. Kumar and J.T. Boyd, "GaAs Quantum Well Distributed Bragg Reflection Laser with AlGaAs/GaAs Superlattice Gratings Fabricated by Focused Ion Beam Mixing," Applied Physics Letters, Vol. 67, pp. 179-181, July 1995. 187. J. Xu and A.J. Steckl, "Stain-Etched Porous Si Visible Light Emitting Diodes," Journal of Vacuum Science and Technology B, Vol. 13, pp. 1221-1224, May/June 1995. 186. L. Wei, M. Vaudui, C-L. Hwang, G. White, J. Xu and A.J. Steckl, "Heat Conduction in Si Thin Films: Effect of Microstructure," Journal of Materials Research, Vol. 10, pp. 1889-1896, August 1995. 185. P. Chen and A.J. Steckl, "Selective Compositional Mixing in GaAs/AlGaAs Superlattice Induced by Low Dose Si Focused Ion Beam Implantation," Journal of Applied Physics, Vol. 77, pp.5616-5624, June 1995. Reprinted in Quantum Well Intermixing for Photonics, E.H. Li, Editor, SPIE Milestone Series, 1998. 184. M. Kumar, A.G. Choo, P. Chen, G.N. Debrander, J.T. Boyd, H.E. Jackson, A.J. Steckl, R.D. Burnham and S.C. Smith, "Characterization of Optical Channel Waveguides Formed by FIB Induced Compositional Mixing in AlGaAs MQW's," Superlattices and Microstructures Journal, Vol. 15, 421-425, 1994. 183. J.P. Li and A.J. Steckl, "Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization," Journal of Electrochemical Society, Vol. 142, pp. 634-641, February 1995. 182. J. Xu, H.C. Mogul and A.J. Steckl, "Visible Photoluminescence from Stain-Etched Silicon Nanostructure," Proceedings of the 2nd International Symposium on Quantum Confinement, Electrochemical Society Proceedings, Vol. 94-17, pp. 231-239, 1994. 181. J. Xu and A.J. Steckl, "Fabrication of Visibly Photoluminescent Si Microstructures by Focused Ion Beam Implantation and Wet Etching," Applied Physics Letters, Vol. 65, pp. 2081-2083, October 1994. 180. A.G. Choo, X. Cao, S. Tlali, H.E. Jackson, P. Chen, A.J. Steckl and J.T. Boyd, "Raman and Photoluminescence Characterization of FIB Patterned AlGaAs/GaAs Multiple Quantum Wells," Proceedings of 1993 MRS Symposium on Diagnostic Techniques of Semiconductor Materials Processing, Vol. 324, pp. 193-198, 1994. 179. A.J. Steckl, J. Xu, H.C. Mogul and S.M. Prokes, "Si Hydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photoluminescence," Journal of the Electrochemical Society, Vol. 142, pp. L69-71, May 1995. 178. Q-Y. Tong, U. Gösele, C. Yuan, A.J. Steckl and M. Reiche, "Silicon Carbide Wafer Bonding," Journal of the Electrochemical Society, Vol. 142, pp. 232-236, January 1995. 177. J.N. Su and A.J. Steckl, "SiC Devices for Space Electronics-High Voltage, Temperature Hard Contacts," SAE Aerospace Meeting Proceedings, Technical Paper Series 94/227, Dayton, OH, April 1994. 176. J. Xu and A.J. Steckl, "Visible Electroluminescence from Stain-Etched Porous Si Diodes," IEEE Electron Device Letters, Vol. 15, pp. 507-509, December 1994. 175. H.C. Mogul, J. Xu, A.J. Steckl, S.J. Clarson, J.O. Stuart and C.L. Hoffman, "Light Emission and Related Materials Properties of Siloxene and Si-based Zeolites," Proceedings of 1994 Electrochemical Society 7th International Symposium on Si Materials and Science and Technology, Vol. 99-10, pp. 563-568, May 1994. 174. A.J. Steckl, C. Yuan, Q-Y. Tong, U. Gösele and M.J. Loboda, "SiC SOI Structures by Direct Carbonization and Growth with SCB," Proceedings of 1994 Electrochemical Society Symposium on Silicon-on-Insulator Technology and Devices, Vol. 99-11, pp. 117-122, May 1994. 173. A.J. Steckl, C. Yuan, Q-Y. Tong, U. Gösele and M.J. Loboda, "SiC SOI Structures by Direct Carbonization Conversion and Post Growth from Silacyclobutane," Journal of Electrochemical Society, Vol. 141, pp. L66-68, June 1994. 172. A.G. Choo, S. Tlali, H.E. Jackson, J.P. Li and A.J. Steckl, "Raman Scattering Characterization of Ultrathin Films of ß-SiC," Proceedings of 1993 MRS Symposium on Diagnostic Techniques of Semiconductor Materials Processing, Vol. 324, pp. 267-271, 1994. 171. X.L. Cao, A.G. Choo, L.M. Smith, H.E. Jackson, P. Chen and A.J. Steckl, "Time-Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures," Proceedings of 1993 MRS Symposium on Growth, Processing and Characterization of Semiconductor Heterostructures, Vol. 326, pp. 531-536, 1994. 170. P. Chen and A.J. Steckl, "Vacancy Enhanced Al-Ga Inter-Diffusion in Si FIB-Implanted Superlattice," Proceedings of 1993 MRS Symposium on Defects in Advanced Semiconductors, Vol. 325, pp. 37-42, 1994. 169. H.Q. Yan, H. Wang and A.J. Steckl, "Low Energy Ion Beam Assisted Deposition of Low Resistivity Al Using TMAA," Proceedings of 1993 MRS Symposium on Materials Synthesis and Processing Using Ion Beams, Vol. 316, pp. 863-868, 1994. 168. C. Yuan, A.J. Steckl and M.J. Loboda, "Effect of Carbonization on the Growth of 3C-SiC on Si (111) by Silacyclobutane," Applied Physics Letters, Vol. 64, pp. 3000-3002, May 1994. 167. A.J. Steckl and J.N. Su, "High Voltage, Temperature-Hard 3C-SiC Schottky Diodes Using All-Ni Metallization," Technical Digest of International Electron Device Meeting, IEEE Cat. No. 93CH3361-3, pp. 695-698, December 1993. 166. M.D. Roth, A.J. Steckl, J.P. Li, J. Edgar and Z.J. Yu, "Atomic Force Microscopy of AlN Thin Films," Silicon Carbide and Related Materials, Institute of Physics Conference Series, Vol. 137, pp. 553-556, 1994. 165. A.J. Steckl, J.N. Su, P.H. Yih, C. Yuan and J.P. Li, "Ohmic and Rectifying Contacts to 3C-SiC Using All-Ni Technology," Silicon Carbide and Related Materials, Institute of Physics Conference Series, Vol. 137, pp. 653-656, 1994. 164. P.H. Yih, J.P. Li and A.J. Steckl, "High Breakdown Voltage SiC/Si Heterojunction Diodes by Rapid Thermal Chemical Vapor Deposition with Methylsilane," Silicon Carbide and Related Materials, Institute of Physics Conference Series, Vol. 137, pp. 577-580, 1994. 163. A.J. Steckl, C. Yuan, J.P. Li and M.J. Loboda, "Reduced Temperature Heteroepitaxial Growth of 3C-SiC on Si (100) from Silacyclobutane," Silicon Carbide and Related Materials, Institute of Physics Conference Series, Vol. 137, pp. 79-82, 1994. 162. P.H. Yih and A.J. Steckl, "Reactive Ion Etching of 6H-SiC in CHF3 Plasma," Silicon Carbide and Related Materials, Institute of Physics Conference Series, Vol. 137, pp. 317-320, 1994. 161. P.H. Yih and A.J. Steckl, "Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas: II. 6H-SiC," Journal of the Electrochemical Society, Vol. 142, pp. 312-319, January 1995. 160. O.M.R. Chyan, D.G. Frank, A.T. Hubbard, J.P. Li and A.J. Steckl, "Measurement of Complete Auger Electron Emission Angular Distributions from ß-SiC Films on Si (100)," Journal of Vacuum Science and Technology A, Vol. 12, pp. 457-464, March/April 1994. 159.A.J. Steckl, J.N. Su, J. Xu, J.P. Li, C. Yuan, P.H. Yih and H.C. Mogul, "Selective-Area Room Temperature Visible Photoluminescence from SiC/Si Heterostructures," Applied Physics Letters, Vol. 64, pp. 1419-1420, March 1994. 158. P.H. Yih, J.P. Li and A.J. Steckl, "SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapor Deposition," IEEE Transactions on Electron Devices, Vol. ED-41, pp. 281-287, March 1994. 157. A.J. Steckl, J. Xu and H.C. Mogul, "Relationship between Crystallinity and Photoluminescence in Stain-Etched Porous Si," Journal of the Electrochemical Society, Vol. 141, pp. 674-679, March 1994. 156. A.J. Steckl, C. Yuan, J.P. Li and M.J. Loboda, "Growth of Crystalline 3C-SiC on Si at Reduced Temperatures by Chemical Vapor Deposition from Silacyclobutane," Applied Physics Letters, Vol. 63, pp. 3347-3349, December 1993. 155. H.C. Mogul, A.J. Steckl and E. Ganin, "Electrical Properties of Si p+-n Junctions for sub-0.25µm CMOS Fabricated by Ga FIB Implantation," IEEE Transactions on Electron Devices, Vol. ED-40, pp. 1823-1892, October 1993. 154. H.C. Mogul, A.J. Steckl and S.W. Novak, "Shallow Si p+-n Junctions Fabricated by Focused Ion Beam Ga+ Implantation Through Thin Ti and TiSi2 Layers," Journal of Applied Physics, Vol. 74, pp. 2318-2322, August 1993. 153. A.J. Steckl, J.N. Su, J. Xu, J.P. Li, C. Yuan, P.H. Yih and H.C. Mogul, "Characterization of Photoluminescence from Anodically Etched SiC/Si Heterostructures," MRS Proceedings of Symposium on Silicon-Based Optoelectronics Materials, Vol. 298, pp. 361-366, April 1993. 152. A.J. Steckl, J. Xu and H.C. Mogul, "Photoluminescence of Chemically Etched Polycrystalline and Amorphous Si Thin Films," MRS Proceedings of Symposium on Silicon-Based Optoelectronics Materials, Vol. 298, pp. 211-216, April 1993. 151. A.J. Steckl, M.D. Roth, J.A. Powell and D.J. Larkin, "Atomic Probe Microscopy of 3C SiC Films Grown on 6H SiC Substrates," Applied Physics Letters, Vol. 62, pp. 2545-2547, May 1993. 150. J.P. Li and A.J. Steckl, "AFM Study of Nucleation and Void Formation in SiC Carbonization of Si," MRS Proceedings of Symposium on Evolution and Thin Film Microstructure, Vol. 280, pp. 739-744, December 1992. 149. A.J. Steckl J. Xu and H.C. Mogul, "Submicron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation," MRS Proceedings of Symposium on Semiconductor Heterostructures for Photonic and Electronic Applications, Vol. 281, pp. 519-524, 1993. 148. M. Kumar, G. Debrabander, P. Chen, J.T. Boyd, A.J. Steckl, A.G. Choo, H.E. Jackson, R.D. Burnham and S.C. Smith, "Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by FIB-Induced Composition Mixing," MRS Proceedings of Symposium on Semiconductor Heterostructures for Photonic and Electronic Applications, Vol. 281, pp. 313-318, 1993. 147. A.J. Steckl, P. Chen, A.G. Choo, H. Jackson, J.T. Boyd, S.W. Novak, A. Ezis, P.P. Pronko and R.M. Kolbas, "Enhanced Photoluminescence from AlGaAs/GaAs Superlattice Gratings Fabricated by Si FIB Implantation," MRS Proceedings of Symposium on Semiconductor Heterostructures for Photonic and Electronic Applications, Vol. 281, pp. 319-324, 1993. 146. J.P. Li, A.J. Steckl, I. Golecki, F. Reidinger, L. Wang, X.J. Ning and P. Pirouz, "Structural Characterization of Nanometer SiC Films Grown on Si," Applied Physics Letters, Vol. 62, pp. 3135-3137, June 1993. 145. M. Kumar, V. Gupta, G.N. DeBrabander, P. Chen, J.T. Boyd, A.J. Steckl, A.G. Choo, H.E. Jackson, R.D. Burnham and S.C. Smith, "Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing," IEEE Photonics Technology Letters, Vol. 4, pp. 435-438, April 1993. Reprinted in Quantum Well Intermixing for Photonics, E.H. Li, Editor, SPIE Milestone Series, 1998. 144. P.H. Yih and A.J. Steckl, "Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of ß-SiC in Fluorinated Plasmas," Journal of the Electrochemical Society , Vol. 140, pp. 1813-1824, June 1993. 143. J.P. Li and A.J. Steckl, "Accurate Determination of Defects in the Gate Oxide of Si MOS Devices by Propane Infiltration," Journal of the Electrochemical Society, Vol. 140, pp. L89-92, June 1993. 142. A.J. Steckl, J. Xu and H.C. Mogul, "Photoluminescence from Stain-Etched Poly-Crystalline Si Thin Films," Applied Physics Letters, Vol. 62, pp. 2111-2113, April 1993. 141. A.J. Steckl, J. Xu, H.C. Mogul and S. Mogren, "Doping-Induced Selective Area Photoluminescence in Porous Silicon," Applied Physics Letters, Vol. 62, pp. 1982-1984, April 1993. 140. H.C. Mogul and A.J. Steckl, "Rapid Thermal Annealing of Nanoscale Si p+-n Junctions Fabricated by Low Energy FIB Ga+ Implantation," IEEE Electron Device Letters, Vol. 14, pp. 123-125, March 1993. 139. J.P. Li, P.H. Yih and A.J. Steckl, "Thickness Determination of ß-SiC Thin Films Grown on Si by RTCVD," Journal of the Electrochemical Society, Vol. 140, pp. 178-182, January 1993. 138. H.C. Mogul, A.J. Steckl and G. Webster, "Electrochemical Capacitance-Voltage Depth Profiling of Nanometer-Scale Junctions Fabricated by Ga+ FIB Implantation into Silicon," Applied Physics Letters, Vol. 61, pp. 554-556, August 1992. 137. A.J. Steckl and J.P. Li, "Effect of Carbonization Gas Precursor on the Heteroepitaxial Growth of SiC-on-Si by RTCVD," MRS Proceedings of Symposium on Wide Band-Gap Semiconductors, Vol. 242, pp. 537-542, 1992. 136. A.J. Steckl, H.C. Mogul and S. Mogren, "Si Nanostructure Fabrication by FIB Selective Doping and Anisotropic Etching," MRS Proceedings of Symposium on Light Emission from Silicon, Vol. 256, pp. 123-126, 1992. 135. A.G. Choo, H.E. Jackson, P. Chen, A.J. Steckl, V. Gupta and J.T. Boyd, "Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices," MRS Proceedings of Symposium on Advanced III-V Compound Semiconductor Growth, Processing and Devices, Vol. 240, pp. 697-701, 1992. 134. A.G. Choo, V. Gupta, H.E. Jackson, J.T. Boyd, A.J. Steckl, P. Chen, B.L. Weiss and R.D. Burnham, "Raman Characterization in AlGaAs Superlattice Channel Waveguide Structures Formed by CIB and FIB Implantation," MRS Proceedings of Symposium on Advanced III-V Compound Semiconductor Growth, Processing and Devices, Vol. 240, pp. 691-695, 1992. 133. A.J. Steckl, P. Chen, A. Choo, H. Jackson, J.T. Boyd, P.P. Pronko, A. Ezis and R. Kolbas, "Dose Effects in Si FIB-Mixing of Short Period AlGaAs/GaAs Superlattice Structures," MRS Proceedings of Symposium on Advanced III-V Compound Semiconductor Growth, Processing and Devices, Vol. 240, pp. 703-708, 1992. 132. A.J. Steckl and J.P. Li, "Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD," C.Y. Yang and G.L. Harris, eds., Springer Proceedings in Physics, Vol. 71, Springer-Verlag, pp. 49-59, 1992. 131. A.J. Steckl and P.H. Yih,"Effect of H2 Additive on Reactive Ion Etching of ß-SiC in CHF3/O2 Plasma," C.Y. Yang and G.L. Harris, eds., Springer Proceedings in Physics, Vol. 71, Springer-Verlag, pp. 423-429, 1992. 130. A.J. Steckl and J.P. Li, "Uniform ß-SiC Thin Film Growth on Si by Low Pressure RTCVD," Applied Physics Letters, Vol. 60, pp. 2107-2109, April 1992. 129. A.J. Steckl and P.H. Yih, "Residue-Free Reactive Ion Etching of ß-SiC in CHF3/O2 with H2 Additive," Applied Physics Letters, Vol. 60, pp. 1966-1968, April 1992. 128. A.J. Steckl, S. Mogren, M.W. Roth and J.P. Li, "Atomic Probe Imaging of ß-SiC Thin Films Grown on (100) Si," Applied Physics Letters, Vol. 60, pp. 1495-1497, March 1992. 127. A.J. Steckl, H.C. Mogul and S. Mogren, "Localized Fabrication of Si Nanostructures by FIB Implantation," Applied Physics Letters, Vol. 60, pp. 1833-1835, April 1992. 126. A.J. Steckl and J.P. Li, "RTCVD Growth of Nanometer-Thin SiC-on-Si," Thin Solid Films Journal, Vol. 216, pp. 149-154, August 1992. 125. S.W. Novak, C.W. Magee, A.J. Steckl and H.C. Mogul, "SIMS Depth Profiling of Nanometer-Scale p+-n Junctions Fabricated by Ga+ Focused Ion Beam Implantation," J. Vac. Sci. Tech., Vol. B10, pp. 333-335, January 1992. 124. A.J. Steckl and J.P. Li, "Epitaxial Growth of ß-SiC on Si by RTCVD with C3H8 and SiH4," IEEE Trans. Electron. Dev., Vol. 39, pp. 64-74, January 1992. 123. A.J. Steckl, H.C. Mogul, S.W. Novak and C.W. Magee, "Low Energy Off-Axis FIB Ga+ Implantation into Si," J. Vac. Sci. Tech. Vol. B9, pp. 2916-2919, November/December 1991. 122. A.J. Steckl, H. Mogul and S. Mogren, "Electrical Properties of Nanometer-Scale Si p+-n Junctions Fabricated by Low Energy Ga+ FIB Implantation," J. Vac. Sci. Tech., Vol. B9, pp. 2718-2721, September/October 1991. 121. S. Mogren and A.J. Steckl, "STM Characterization of Focused Ion Beam Profiles," MRS Symposium on Nanostructures (EA-26), pp. 103-106, December 1990. 120. A.J. Steckl, H.C. Mogul and S.M. Mogren, "Ultrashallow Si p+-n Junction Fabrication by Low Energy Ga+ Focused Ion Beam Implantation," J. Vac. Sci. Tech., Vol. B8, pp. 1937-1940, November/December 1990. 119. W.S. Pan and A.J. Steckl, "Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen," Journal of the Electrochemical Society, Vol. 137, pp. 212-220, January 1990. 118. C.-M. Lin and A.J. Steckl, "Fabrication of Sub-Micrometer PMOSFET's with Sub-100nm p+-n Shallow Junctions Using Group III Dual Ion Implantation," Solid-State Electronics, Vol. 33, pp. 472-474, April 1990. 117. A.J. Steckl, C-M. Lin, D. Patrizio, A.K. Rai and P.P. Pronko, "Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions," Mat. Res. Soc. Proceedings, Vol. 147, pp. 161-166, 1989. 116. W.S. Pan and A.J. Steckl, "Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films," Amorphous and Crystalline Silicon Carbide II, Vol. 43, Springer-Verlag, pp. 217-223, 1989. 115. C.-M. Lin, A.J. Steckl and T.P. Chow, "Sub-100nm p+-n Shallow Junctions Fabricated by Group III Dual Ion Implantation," Applied Physics Letters, Vol. 54, pp. 1790-1792, May 1989. 114. W.S. Pan and A.J. Steckl, "Reactive Ion Etching for SiC Device Fabrication," in Amorphous and Crystalline Silicon Carbide, G.L. Harris and C.Y. Yang, eds., Springer Proceedings in Physics, Vol. 34, Springer-Verlag, pp. 192-198, 1989. 113. C.-M. Lin, A.J. Steckl and T.P. Chow, "Electrical Properties of Ga-Implanted Si p+-n Shallow Junctions Fabricated by Low Temperature Rapid Thermal Annealing," IEEE Electron Device Letters, Vol. EDL-9, pp. 594-597, November 1988. 112. C.-M. Lin, A.J. Steckl and T.P. Chow, "Si p+-n Shallow Junction Fabrication Using On-Axis Ga+ Implantation," Applied Physics Letters, Vol. 52, pp. 2049-2051, June 1988. 111. W.S. Pan and A.J. Steckl, "Selective Reactive Ion Etching of Tungsten Films in Fluorinated Gases," J. Vac. Sci. Tech., Vol. B6, pp. 1073-1080, July/August 1988. 110. S.D. Chu and A.J. Steckl, "The Effect of Trench-Gate-Oxide Structure on EPROM Device Operation," IEEE Electron Device Letters, Vol. 9, pp. 284-286, June 1988. 109. C.M. Lin, A.J. Steckl and T.P. Chow, "Thin Layer p-n Junction Fabrication Using Ga and In Focused Ion Beam Implantation," J. Vac. Sci. Tech., Vol. B6, pp. 977-981, May/June 1988. 108. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and H-S. Jin, "Characteristics and Surface Analysis of Ion Beam Deposition from Binary Boron Platinum (Pt58B42) Liquid-Metal Ion Source," Journal of Applied Physics, Vol. 63, pp. 878-886, February 1988. 107. C.M. Lin, A.J. Steckl and T.P. Chow, "Rapid Thermal Annealing of FIB-Implanted Ga Shallow Impurity Profiles," Materials Res. Soc. Proceedings, Vol. 101, pp. 495-500, 1988. 106. A.J. Steckl, J.C. Corelli and J.F. McDonald, "Focused Ion Beam Technology and Applications," Emerging Technologies for In-Situ Processing, D. Ehrlich and V.T. Nguyen, Eds., pp. 179-199, NATO ASI Series E-Applied Science, No. 139, M. Nijhoff Publishers, 1988. 105. J.F. McDonald, R. Rajapakse, J.C. Corelli and A.J. Steckl, "Optimized Focused Ion Beam Inspection and Repair of Wafer Scale Interconnections," SPIE Proceedings, Vol. 773, pp. 206-215, 1987. 104. W.-S. Pan and A.J. Steckl, "Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma," Science and Technology of Microfabrication, Materials Research Society Proceedings, Vol. 76, pp. 157-162, 1987. 103. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and H.-S. Jin, "Surface Analysis of Palladium Boride Liquid Metal Ion Beam Deposition on Single Crystal Solid Surface," Journal of Vacuum Science and Technology, Vol. A5, pp. 1362-1366, July/August 1987. 102. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and K.C. Cadien, "Development of Test Bed System for High Melting Temperature Alloy Fabrication and Mass Spectroscopy Analysis of Liquid Metal Ion Beam Source," Journal of Vacuum Science and Technology, Vol. A5, pp. 2073-2076, July/August 1987. 101. J.C. Corelli, A.J. Steckl, D. Pulver and J. Randall, "Ultra Low Dose Effects in Ion-Beam Induced Grafting of PMMA," Nuclear Instruments and Methods of Physics Research. B, Vol. 19/20, pp. 1009-1012, 1987. 100. R.H. Higuchi-Rusli, K.C. Cadien, J.C. Corelli and A.J. Steckl, "Development of Boron Liquid Metal Ion Source for the Focused Ion Beam System," Journal of Vacuum Science and Technology, Vol. B5, pp. 190-194, January/February 1987. 99. J.O. Choi, S.Y. Kim, J.A. Moore, J.C. Corelli and A.J. Steckl, "Enhanced Plasma Etch Resistance of Acrylic Acid - Calcium Acetate - Modified PMMA," Journal of Vacuum Science and Technology, Vol. B5, pp. 382-385, January/February 1987. 98. A.J. Steckl, S. Balakrishnan, H-S. Jin and J.C. Corelli, "Micromachining of Polyimide Films with Focused Ion Beams," Microelectronic Engineering, Vol. 5, pp. 461-462, December 1986. 97. A.J. Steckl, C.-M. Lin, S.-D. Chu and J.C. Corelli, "Simulation of Graded-Base Bipolar Transistor Characteristics Fabricated with a Focused Ion Beam," Microelectronic Engineering, Vol. 5, pp. 179-189, December 1986. 96. B. Zetterlund and A.J. Steckl, "Low Temperature Operation of Silicon Surface Channel Charge Coupled Devices," IEEE Transactions on Electron Devices, Vol. ED-34, pp. 39-51, January 1987. 95. S.S. Bencuya, A.J. Steckl and B.C. Burkey, "Impact of Edge Effects on Charge - Packet Splitting Accuracy," Solid State Electronics, Vol. 30, pp. 299-305, 1987. 94. A.J. Steckl, "Prospects for Particle Beam and In-Situ Processing of Integrated Circuits," Invited Paper, Proceedings of IEEE, Vol. 74, pp. 1753-1774, December 1986. 93. J.F. McDonald, A.J. Steckl, C.A. Neugebauer, R.O. Carlson and A.S. Bergendahl, "Multilevel Interconnections for Wafer Scale Integration," Invited Paper, Journal of Vacuum Science and Technology, Vol. A4, pp. 3127-3138, November/December 1986. 92. W.-J. Lu, A.J. Steckl and T.P. Chow, "Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) - Dielectric Isolation Process," Journal of the Electrochemical Society, Vol. 133, pp. 1180-1185, June 1986. 91. A.J. Steckl, S.P. Murarka and J.C. Corelli, "In-Situ Processing of Semiconductor Devices," Invited Paper, 1986 Custom Integrated Circuits Conference, 86CH2258-2, pp. 586-590, May 1986. 90. S.-D. Chu, J.C. Corelli, A.J. Steckl, R.H. Reuss, W.M. Clark, D.B. Rensch and W.G. Morris, "Comparison of npn Transistors Fabricated with Broad Beam and Spatial Profiling Using Focused Ion Beam Implantation," Journal of Vacuum Science and Technology, Vol. B4, pp. 375-379, January/February 1986. 89. S.-Y. Kim, J. Choi, D. Pulver, J.A. Moore, J.C. Corelli and A.J. Steckl, "Optimization of Solvent Development in PMMA Radiation-Induced Graft Lithography," Journal of Vacuum Science and Technology, Vol. B4, pp. 403-408, January/February 1986. 88. D.C. King, A.J. Steckl, J.L. Morgenstern, J.F. McDonald, M.A. Bourgeois, D.J. Yemc and I. Elminyawai, "The Flip-and-Shift Signal Enhancement Application for a Predictive E-Beam Pattern Registration Model," Journal of Vacuum Science and Technology, Vol. B4, pp. 273-279, January/February 1986. 87. J. Sugiura, W.-J. Lu, K.C. Cadien and A.J. Steckl, "Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases," Journal of Vacuum Science and Technology, Vol. B4, pp. 349-354, January/February 1986. 86. T.P. Chow, W.-J. Lu, A.J. Steckl and B.J. Baliga, "Thin Film Properties of Sputtered Niobium Silicide on SiO2, Si3N4, and N+ poly-Si," Journal of Electrochemical Society, Vol. 133, pp. 175-178, January 1986. 85. W.-J. Lu, A.J. Steckl and T.P. Chow, "Completely Consumed Carbide - A New Process for Dielectric Isolation," VLSI Science and Technology, Electrochemical Society Proceedings, Vol. 85-5, pp. 244-252, May 1985. 84. R.M. Tarro, J.T. Warden, J.C. Corelli, J.A. Moore, A.J. Steckl and E. Galiano, "Electron Spin Resonance Studies of Irradiated PMMA," Microcircuit Engineering 1984, pp. 537-544, Academic Press, NY, 1985. 83. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "Charge Domain Integrated Circuits for Signal Processing," IEEE Journal of Solid State Circuits, Vol. SC-20, No. 12, pp. 562-571, April 1985. 82. M.E. Haslam, J.F. McDonald, D.C. King, M.A. Bourgeois, D.G.L. Chow and A.J. Steckl, "Two Dimensional Haar Thinning for Data Base Compaction in Fourier Proximity Correction for Electron Beam Technology," Journal of Vacuum Science and Technology, Vol. 3, pp. 165-173, January/February 1985. 81. H. Hamedeh, J.C. Corelli and A.J. Steckl, "Focused Ga+ Beam Direct Implantation for Si Device Fabrication," Journal of Vacuum Science and Technology, Vol. 3, pp. 91-95, January/February 1985. 80. A.J. Steckl, "The SRC-RPI Program on Advanced Beam Systems for VLSI," SRC Newsletter, Vol. 2, No. 11, pp. 1-3, November 1984. 79. T.P. Chow and A.J. Steckl, "Plasma Etching of Refractory Gates for VLSI Applications," Journal of Electrochemical Society, Vol. 131, pp. 2325-2335, October 1984. 78. S. Bencuya and A.J. Steckl, "Charge Packet Splitting in CCD's," IEEE Transactions on Electron Devices, Vol. ED-31, pp. 1494-1501, October 1984. 77. J.F. McDonald, K. Rose, E. Rogers and A.J. Steckl, "Wafer Scale Integration," Invited Paper, IEEE Spectrum, Vol. 21, pp. 32-39, October 1984. 76. A.J. Steckl, J.A. Moore, J.C. Corelli and W.-T. Liu, "Image Enhancement in High Resolution Lithography through Polymer Grafting Techniques," 1984 IEEE Symposium on VLSI Technology, IEEE Cat. No. 84CH2061-0, pp. 60-61, September 1984. 75. J.A. Moore, J.C. Corelli, A.J. Steckl, J.T. Warden, R. Tarro, W.-T. Liu and J.N. Randall, "Resist Sensitivity Enhancement in Microlithography by In-Situ Polymerization," Polymer Reprints, Vol. 25, No. 2, pp. 105-106, August 1984. 74. W.-J. Lu, A.J. Steckl, T.P. Chow and W. Katz, "Thermal Oxidation of Silicon Carbide Thin Films," Journal of Electrochemical Society, Vol. 131, pp. 1907-1914, August 1984. 73. A.J. Steckl, "Particle Beam Processing for Microfabrication," Proc. of Eighth Symposium on Ion Sources and Ion-Assisted Technology, pp. 365-377, June 1984. 72. W.-T. Liu, J.C. Corelli, A.J. Steckl, J.A. Moore and J. Silverman, "Resist Sensitivity Enhancement in X-Ray Lithography by In-Situ Polymerization," Applied Physics Letters, Vol. 44, pp. 973-975, May 1984. 71. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "A Narrowband Charge Domain Bandpass Filter," Proc. Custom Integrated Circuits Conference, IEEE Cat. No. 84CH1987-7, pp. 399-403, May 1984. 70. D.G.L. Chow, J.F. McDonald, D. King and A.J. Steckl, "Comparison Between Haar and Walsh Transform Thinning of the Lithography," Microcircuit Engineering, H. Ahmed, J.A. Cleaver and G.A.C. Jones, eds., pp. 65-74, Academic Press, New York 1984. 69. T.P. Chow and A.J. Steckl, "A Review of Refractory Gates for MOS VLSI," Technical Digest of International Electron Devices Meeting, IEEE Cat. No. 83CH1973-7, pp. 513-517, December 1983. 68. D.G.L. Chow, J.F. McDonald, D.C. King and A.J. Steckl, "An Image Processing Approach to Fast, Efficient Proximity Correction for Electron Beam Lithography," Journal of Vacuum Science and Technology, Vol. B1(4), pp. 1383-1390, October/December 1983. 67. T.P. Chow and A.J. Steckl, "Refractory Metal Silicides: Thin Film Properties and Processing Technology," IEEE Transactions on Electron Devices, Vol. ED-30, pp. 1480-1497, November 1983. 66. R. Pflueger, A.J. Steckl and J.C. Corelli, "Study of Defect States in Silicon by Photoionization Spectroscopy," Electrochemical Society, 83-2, pp. 554-545, October 1983. 65. T.P. Chow, W.-J. Lu, A.J. Steckl and B.J. Baliga, "Thin Film Properties of Sputtered Niobium Silicide on SiO2 and n+ Poly-Si," Electrochemical Society, 83-2, pp. 446-447, October 1983. 64. J.L. Morgenstern, A.J. Steckl, D.C. King, M.A. Bourgeois and G.R. Redinbo, "A First-Order Physical Model of Electron-Beam Scattering in E-Beam Lithography Registration," Electrochemical Society, 83-2, pp. 329-330, October 1983. 63. W.-T. Liu, M. Bourgeois, J.A. Moore, J.C. Corelli and A.J. Steckl, "PMMA Resist Sensitivity Amplification by E-Beam Induced Grafting of Acrylic Acid," Electrochemical Society, 83-2, pp. 331-332, October 1983. 62. W. Vidinski, A.J. Steckl and J.C. Corelli, "Correlation of Photoluminescence and Symmetry Studies with Photoexcitation and Decay Processes of Infrared Active Defects in Si," Journal of Applied Physics, Vol. 54, July 1983. 61. W.-J. Lu, T.P. Chow, A.J. Steckl and W. Katz, "Thermal Oxidation of Sputtered Silicon Carbide Thin Films," Electrochemical Society, 83-1, p. 133, May 1983. 60. T.P. Chow and A.J. Steckl, "A Review of Plasma Etching of Refractory Metal Silicides," Proceedings of the Fourth Symposium on Plasma Processing, Electrochemical Society, Vol. 83-10, pp. 362-381, May 1983. 59. T.P. Chow, K. Hamzeh and A.J. Steckl, "Thermal Oxidation of Niobium Silicide Thin Films," Journal of Applied Physics, Vol. 54, pp. 2716-2719, May 1983. 58. A.J. Steckl and T.P. Chow, "The Development of Refractory Metallization for High-Speed VLSI Circuits," Proceedings of Fourth Brazilian Conference on Microelectronics, pp. 15-33, February 1983. 57. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "A High-Q Bandpass Filter Demonstrating Charge Domain Technology," Technical Digest of International Electron Devices Meeting, IEEE Cat. No. 82CM1832-5, pp. 127-130, December 1982. 56. S.S. Bencuya, A.J. Steckl and T.L. Vogelsong, "Coefficient Accuracy for CCD Packet Splitting Techniques," Technical Digest of International Electron Devices Meeting, Cat. No. 82CM1832-5, pp. 123-126, December 1982. 55. T.P. Chow and A.J. Steckl, "The Development of Refractory Gate Metallization for VLSI," Electrochemical Society, Vol. 82-2, pp. 353-354, October 1982. 54. J.A. Moore, D. Follett, K. Weiss, A.J. Steckl and W.-T. Liu, "Polarity Reversal of PMMA Resist by Treatment with Chlorosilanes," Electrochemical Society Meeting, Vol. 82-2, pp. 321-322, October 1982. 53. S.S. Bencuya, A.J. Steckl, T.L. Vogelsong and J.J. Tiemann, "Dynamic Packet Splitting in Charge Domain Devices," IEEE Electron Device Letters, Vol. EDL-3, pp. 268-270, September 1982. 52. T.P. Chow and A.J. Steckl, "Plasma Etching of Sputtered Mo and MoSi2 Thin Films in NF3 Gas Mixtures," Journal of Applied Physics, Vol. 53, pp. 466-468, August 1982. 51. C.D. Rude, T.P. Chow and A.J. Steckl, "Characterization of NbSi2 Thin Films," Journal of Applied Physics, Vol. 53, pp. 5703-5709, August 1982. 50. W. Vidinski, A.J. Steckl and J.C. Corelli, "Photoexcitation Properties of Infrared Active Defects Induced by Neutron Irradiation in Silicon," Journal of Nuclear Materials, Vol. 108, pp. 693-699, July 1982. 49. J.J. Tieman, T.L. Vogelsong and A.J. Steckl, "Charge Domain Recursive Filters," IEEE Journal of Solid State Circuits, Vol. SC-17, pp. 597-605, June 1982. 48. T.P. Chow, A.J. Steckl and R. Jerdonek, "Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits," IEEE Electron Device Letters, Vol. EDL-3, pp. 37-40, February 1982. 47. G.E. Smith and A.J. Steckl, "RECIPE-A Two Dimensional VLSI Process Modeling Program," IEEE Transactions on Electron Devices, Vol. ED-29, pp. 216-222, February 1982. 46. S. Okazaki, T.P. Chow and A.J. Steckl, "Edge-Defined Patterning of Hyper-Fine Refractory Metal Silicide MOS Structure," IEEE Transactions on Electron Devices, Vol. ED-28, pp. 1364-1368, November 1981. 45. T.P. Chow, A.J. Steckl and D.M. Brown, "The Effect of Annealing on the Properties of Silicidized Molybdenum Thin Films," Journal of Applied Physics, Vol. 52, pp. 6331-6336, October 1981. 44. B. Zetterlund and A.J. Steckl, "Low Temperature Recombination Lifetime in Si MOSFET's," Applied Physics Letters, Vol. 39, pp. 155-156, July 1981. Reprinted in Low Temperature Electronics, R. Kirchman, ed., IEEE Press, NY 1981. 43. T.P. Chow, M. Ghezzo, A.J. Steckl and D.M. Brown, "Silicon Nitride Passivation for Short-Channel Molybdenum-Gate Devices," Electrochemical Society, Vol. 81-1, pp. 738-741, May 1981. 42. A.J. Steckl, J. McDonald and R.J. Gutmann, "VLSI Design Automation and Interactive Modeling for Electron Beam Lithography," Proc. Custom Integrated Circuits Conference, IEEE Cat. No. 81CH1636-0, May 1981. 41. K.Y. Tam and A.J. Steckl, "Integrated PbS-Si IR Detector Read-Out," IEEE Electron Device Letters, Vol. EDL-2, pp. 130-132, May 1981. 40. T.P. Chow and A.J. Steckl, "Planar Plasma Etching of Mo and MoSi2 Using NF3," Technical Digest of International Electron Devices Meeting, IEEE Cat. No. 80CH1616-2, pp. 149-151, December 1980. 39. G.E. Smith and A.J. Steckl, "Two-Dimensional Integrated Circuit Process Modeling Program-RECIPE," Technical Digest of International Electron Devices Meeting, IEEE Cat. No. 80CH1616-2, pp. 227-230, December 1980. 38. B. Zetterlund and A.J. Steckl, "Low Temperature Recombination Lifetime in Si MOSFET's," Technical Digest of International Electron Devices Meeting, IEEE Cat. No. 80-CH1616-2, pp. 284-288, December 1980. 37. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain Filters," General Electric Technical Information Series No. CRD293, pp. 1-11, December 1980. 36. T.P. Chow, D.M. Brown, A.J. Steckl and M. Garfinkel, "Silane Silicidation of Mo Thin Films," Journal of Applied Physics, Vol. 51, pp. 5981-5985, November 1980. 35. T.P. Chow and A.J. Steckl, "Plasma Etching Characteristics of Sputtered MoSi2 Films," Applied Physics Letters, Vol. 37, pp. 466-468, September 1980. . 34. A.J. Steckl and G. Mohammed, "The Effect of Ambient Atmosphere in the Annealing of Indium Tin Oxide Films," Journal of Applied Physics, Vol. 51, pp. 3890-3895, July 1980. 33. H. Elabd and A.J. Steckl, "Auger Analysis of the PbS-Si Heterojunction," Journal of Electronic Materials, Vol. 9, pp. 525-549, 1980. 32. D.M. Brown, T.P. Chow and A.J. Steckl, "A Review of Refractory Metal IC Technology-Past and Present," Proc. Custom Integrated Circuits Conference, IEEE Cat. No. 80CH1562-8, pp. 85-86, May 1980. 31. A.J. Steckl and S.P. Sheu, "The AC Admittance of the p-n PbS-Si Heterojunction," Solid State Electronics, Vol. 23, pp. 715-720, 1980. 30. A.J. Steckl and K.Y. Tam, "Bias and Temperature Dependence of l/f Noise and Dark Current in the PbS-Si Heterojunction," Proceedings of International Conference on 1/f Noise, pp. 288-296, March 1980 29. M.E. Motamedi, K.Y. Tam and A.J. Steckl, "Design and Evaluation of Ion Implanted CMOS Structures," IEEE Transactions on Electron Devices, ED-27, pp. 578-583, March 1980. 28. T.P. Chow and A.J. Steckl, "Size Effects in MoSi2 Gate MOSFET's," Applied Physics Letters, Vol. 36, pp. 297-299, February 1980. 27. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain Recursive Filters," Technical Digest, IEEE International Solid-State Circuits Conference, IEEE Cat. No. CH 1490-2/80, pp. 96-97, February 1980. 26. A.J. Steckl, H. Elabd, K.Y. Tam, S.P. Sheu and M.E. Motamedi, "The Optical and Detector Properties of the PbS-Si Heterojunction," IEEE Transactions on Electron Devices, Vol. ED-27, pp. 126-133, January 1980. 25. H. Elabd and A.J. Steckl, "Structural and Compositional Properties of the PbS-Si Heterojunction," Journal of Applied Physics, Vol. 51, pp. 726-737, January 1980. 24. H. Elabd, A.J. Steckl and W. Vidinski, "Effect of Substrate Orientation on the Properties of the PbS-Si Heterojunction," Solar Cells Journal, Vol. 1, pp. 199-208, 1979/80. 23. A.J. Steckl, K.Y. Tam and M.E. Motamedi, "Read-Out Characteristics of the PbS-Si HJ Detector," Technical Digest IEDM, IEEE Cat. No. 79CH1504-OED, pp. 650-654, December 1979. 22. T.P. Chow and A.J. Steckl, "MoSi2 Gate MOSFETS for VLSI," Technical Digest IEDM, IEEE Cat. No. 79 CH1504-OED, pp. 458-461, December 1979. 21. A.J. Steckl, K.Y. Tam and M.E. Motamedi, "Direct Injection Read-Out of PbS-Si Heterojunction Detector," Applied Physics Letters, Vol. 35, pp. 537-539, October 1979. 20. H. Elabd, A.J. Steckl and W. Vidinski, "Effect of Substrate Orientation on the Properties of the PbS-Si Heterojunction," Proc. Photovoltaic Material and Device Measurements Workshop, SERI/TP-49-185, pp. 175-178, June 1979. 19. A.J. Steckl and M.E. Motamedi, "Study of the Low Temperature Properties of Charge Coupled Devices," Proc. Microelectronics Symposium, IEEE 79CH13685-4, pp. 57-62, May 1979. Reprinted in Low Temperature Electronics, R. Kirchman, ed., IEEE Press, NY, 1986. 18. M.E. Motamedi, K.Y. Tam and A.J. Steckl, "Custom Designed CMOS for Infrared Signal Read-Out," Proc. Custom Integrated Circuits Conference, pp. 62-65, May 1979. 17. S.P. Sheu and A.J. Steckl, "Frequency Characteristics of the p-n PbS-Si Heterojunction Detector," Proc. International Conference Infrared Physics, E. Affolter and F. Kneubuhl, eds., pp. 351-353, March 1979. 16. A.J. Steckl, M.E. Motamedi, S.P. Sheu, H. Elabd and K.Y. Tam, "The PbSi-Si Heterojunction: A New Approach to Infrared Focal Plane Array Integration," Proc. 1978 CCD Conference, pp. 239-251, October 1978. 15. A.J. Steckl, M.E. Motamedi and S.P. Sheu, "Current Mode Operation of the p-n PbSi-Si Heterojunction Detector," Proc. IRIS Meeting, 132900-4-X, pp. 401-413, June 1978. 14. A.J. Steckl, H. Elabd, And T.H. Jakobus, "p-n Anisotype PbSi-Si Heterojunction Characteristics," Technical Digest of International Electron Device Meeting, IEEE Cat. No. 77-CH1275-7ED, pp. 549-553, December 1977. 13. A.J. Steckl, "IRCCD Imaging Sensors: A Review of Device Options," Proc. of NATO/AGARD Symposium on Impact of CCD and SAW on Signal Processing and Imaging in Advanced Systems, Y. Brault, ed., Vol. CP-230, pp. 4.2.1-4.2.15, October 1977. 12. A.J. Steckl, "IR Detector Properties of the PbS-Si Heterojunction," Proc. IRIS Meeting, Vol. C 127200-3X, pp. 277-286, March 1977. 11. A.J. Steckl, "Infrared Charge Coupled Devices," Infrared Physics, Vol. 12, pp. 65-73, January 1976. 10. A.J. Steckl, "Infrared Optical Properties of Sputtered In2-xSnxO3-y Films," Infrared Physics, Vol. 16, pp. 145-147, January 1976. 9. A.J. Steckl, "Injection Efficiency in Monolithic and Hybrid IRCCD's," Proceedings of 1975 International Conference on CCD Applications, pp. 85-91, October 1975. 8. A.J. Steckl, "Low Temperature Silicon CCD Operation," Proceedings of 1975 International Conference on CCD Applications, pp. 383-388, October 1975. 7. A.J. Steckl, "Infrared Properties of Sputtered In2-xSnxO3-y Films," Conference Digest, International Conference on Infrared Physics, E. Wiesendauger and F. Kneubuhl, eds., pp. 135-137, August 1975. 6. A.J. Steckl, "Charge Coupled Devices," Conference Digest, International Conference on Infrared Physics, E. Wiesendauger and F. Kneubuhl, eds., pp. 37-49, August 1975. 5. A.J. Steckl, R.D. Nelson, B.T. French, R.A. Gudmundsen and D. Schechter, "Application of CCD's to Infrared Detection and Imaging," Proc. of IEEE, Vol. 63, pp. 67-74, January 1975. Reprinted in Charge Coupled Devices: Technology and Applications, R. Melen and D. Buss, eds., IEEE Press, J. Wiley and Sons, 1977. Reprinted in Selected Papers on Semiconductor Infrared Detectors, A. Rogolski, ed., SPIE Milestone Series, Volume MS66, SPIE Optical Engineering Press, 1992. 4. A. J. Steckl and T. Koehler, "A Theoretical Analysis of Directly Coupled 8-12µm Hybride IRCCD," Proceedings of 1973 CCD Applications Conference, p. 247, September 1973 3. A.J. Steckl and P. Das, "A Model of the Acoustoelectric Oscillator," Proc. of 1972 Ultrasonics Symposium, IEEE Press, Cat. No. 70CHO 708-8SU, p. 158, October 1972. 2. M.E. Arellano, P. Das and A.J. Steckl, "Acoustoelectric Current Steps in Optically Polished Paralled CdS," Proc. of 1972 Ultrasonics Symposium, IEEE Press, Cat. No. 72CHO 708-8SU, p. 168, October 1972. 1. P. Das and A.J. Steckl, "Current Oscillations in Optically Polished and Parallel Plates of CdS," Applied Physics Letters, Vol. 16, p. 163, 1970.
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456. J. Huang, D. Han, and A. J. Steckl, "
343. L. Bodiou, A. Braud, J.-L. Doualan, R. Moncorge, J. H. Park, C. Munasinghe, A. J. Steckl, K. Lorenz, E. Alves and B. Daudin , “|
C. Presentations 353. D. S. Lee, A. J. Steckl, U. Hommerich, E. E. Nyein, P. Rack, J. Fitzgerald and J. M. Zavada, “Enhanced Blue Emission from Tm-doped AlxGa1-xN Electroluminescent Thin Films”, 2003 Int’l. Semiconductor Research Symposium, Washington, DC (Dec. 2003). 352. C. Munasinghe, A. J. Steckl, J. Heikenfeld, R. Dorey, R. Whatmore, J. Bender, J. Wager, “Improved Luminance and Efficiency of ZnS:Mn and GaN:Eu TDEL Devices Using PZT Thick Dielectric Films”, 2003 Int’l. Semiconductor Research Symposium, Washington, DC (Dec. 2003). 351. A. J. Steckl, “Hybrid Inorganic/Organic Luminescent Devices”, 2003 Int’l. Semiconductor Research Symposium, Invited Presentation, Washington, DC (Dec. 2003). 350. E. E. Nyein, U. Hommerich, D. S. Lee, J. C. Heikenfeld, A. J. Steckl, and J. M. Zavada, “Spectroscopic Studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm Prepared by Solid Source Molecular Beam Epitaxy”, IEEE Lasers and Electro Optics Society Meeting, Tucson, AZ (Oct. 2003). 349. S. Banerjee, C. C. Baker, D. Klotzkin, and A. J. Steckl,“Gain Characteristics of Er-doped ZSG Waveguide Optical Amplifiers”, IEEE Lasers and Electro Optics Society Meeting, Tucson, AZ (Oct. 2003). 348. C. C. Baker, A. J. Steckl, J. C. Heikenfeld, E. E. Nyein and U. Hommerich,“1.5µm Er-doped Zinc Silicate Germanate Waveguide Amplifier”, IEEE Lasers and Electro Optics Society Meeting, Tucson, AZ (Oct. 2003). 347. A. J. Steckl, J. C. Heikenfeld, C. Munasinghe, D. S. Lee and Y. Q. Wang, “Inorganic Electroluminescent Displays: The Impact of New Materials”, Invited Presentation, IEEE Lasers and Electro Optics Society Meeting, Tucson, AZ (Oct. 2003). 346. C. W. Lee, H. Everitt, D. S. Lee, A. J. Steckl, U. Hommerich, E. E. Nyein, J. M. Zavada, “Temperature Dependent Visible Luminescence of Eu-doped GaN on Si”, MRS Wide Bandgap III-Nitride Workshop, Richmond VA (Oct. 2003). 345. U. Hommerich, E. E. Nyein, D. S. Lee, A. J. Steckl, J. M. Zavada, “Photoluminescence Properties of In-Situ Tm-doped AlGaN”, MRS Wide Bandgap III-Nitride Workshop, Richmond VA (Oct. 2003). 344. D. S. Lee, A. J. Steckl, U. Hommerich, E. E. Nyein, J. M. Zavada, “Enhanced Blue Emission from Tm-doped AlGaN Electroluminescent Thin Films”, MRS Wide Bandgap III-Nitride Workshop, Richmond VA (Oct. 2003). 343. A. J. Steckl, D. S. Lee, J. Heikenfeld, C. Munasinghe, M. Pan, Y. Wang, Z. Yu, J. Park, C. Baker and R. Jones, “Rare Earth Doped Gallium Nitride Devices”, 2003 Int’l. Symp. Compound Semiconductors, San Diego CA (Aug. 2003). 342. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee, and A. J. Steckl, “GaN – Ideal Semiconductor Host for Er3+ Ions”,Int’l. Rare Earth Systems Conference, Wroclaw Poland (June 2003). 341. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee, and A. J. Steckl, “Excitation Spectroscopy of Er-Doped GaN”, Euro. Mat. Res. Soc., Strasbourg France (June 2003). 340. U. Hommerich, E. E. Nyein, D. S. Lee, J. C. Heikenfeld, A. J. Steckl, and J. M. Zavada, “Photoluminescence Studies of Rare Earth (Er, Eu, Tm) Doped GaN”, Invited Paper, Euro. Mat. Res. Soc., Strasbourg France (June 2003). 339. A. J. Steckl, “Rare Earth Doped GaN: Growth, Properties and Fabrication of Electroluminescent Devices”, Invited Paper, Euro. Mat. Res. Soc., Strasbourg France (June 2003). 338. E. E. Nyein, U. Hommerich, D. S. Lee, J. C. Heikenfeld, A. J. Steckl, and J. M. Zavada, “Characterization of the Red Light Emission from Eu-Doped GaN”, Conf. Lasers and Electro Optics, Baltimore MD (June 2003). 337. J. Heikenfeld, R. A. Jones, and A. J. Steckl, “Black Dielectric Electrluminescent 160´80 Pixel Display”, Soc. Info. Display Int’l. Meeting, Baltimore MD (May 2003). 336. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee and A. J. Steckl, “New Spectroscopic Data of Erbium Ions in GaN Thin Films”, Electrochem. Soc. Meeting, Paris France (May 2003). 335. D. S. Lee, A. J. Steckl, E. E. Nyein, U. Hommerich, F. Pelle, and J. M. Zavada, “Enhancement of Blue Emission from Tm-Doped GaN Electroluminescenct Devices”, Workshop on Impurity Based Electroluminescence in Wide Bandgap Semicnductors, Santa Fe NM (April 2003). 334. E. E. Nyein, U. Hommerich, D. S. Lee, J. C. Heikenfeld, A. J. Steckl, and J. M. Zavada, “Spectroscopic Studies on Er-Doped GaN as a Function of Ga Flux”, Workshop on Impurity Based Electroluminescence in Wide Bandgap Semicnductors, Santa Fe NM (April 2003). 333. A. J. Steckl, C. Munasinghe, D. S. Lee, and J. Heikenfeld, “Emission Efficiency in Electroluminescent Devices”, Workshop on Impurity Based Electroluminescence in Wide Bandgap Semicnductors, Santa Fe NM (April 2003). 332. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee, and A. J. Steckl, “Site-Selective Excitation Spectroscopy of Er-Doped GaN”, Workshop on Impurity Based Electroluminescence in Wide Bandgap Semicnductors, Santa Fe NM (April 2003). 331. A. J. Steckl, D. S. Lee, M. Pan, and J. Heikenfeld, “Photoemission from In-situ Rare-Earth-Doped GaN Grown by MBE and MOCVD”, Amer. Phys. Soc. Meeting, Austin TX (March 2003). 330. A. J. Steckl, J. Heikenfeld, D. S. Lee, M. Garter, C. Baker, Y. Q. Wang, R. Jones, and M. Pan, Invited Paper, “Rare-Earth-Doped GaN: Growth, Properties and Fabrication of Electroluminescent Devices”, Materials Research Soc. Meeting, Boston, MA (Nov. 2002). 329. L. Cheng, J. D. Scofield and A. J. Steckl, “Fabrication of Novel Optical High-Temperature Sensor Using SiC Thin Film Grown on Sapphire”, Materials Research Soc. Meeting, Boston, MA (Nov. 2002). 328. M. Pan and A. J. Steckl, “Eu-Doped GaN Luminescent Films Grown by MOCVD”, Materials Research Soc. Meeting, Boston, MA (Nov. 2002). 327. Y. Q. Wang and A. J. Steckl, “Three-color Integration of Rare-Earth-Doped GaN Electroluminescent Thin Films”, Materials Research Soc. Meeting, Boston, MA (Nov. 2002). 326. D. S. Lee and A. J. Steckl, “Photopump-Enhanced Emission of Rare-Earth-Doped GaN Electroluminescent Thin Films”, Materials Research Soc. Meeting, Boston, MA (Nov. 2002). 325. R. Jones, J. C. Heikenfeld and A. J. Steckl, “Rare Earth Doped GaN Balck Dielectric Electroluminescent Technology for Full-Color, High-Contrast Display Applications”, SID Vehicular Display Symp., Detroit, MI (Oct. 2002). 324. J. C. Heikenfeld, R. Jones and A. J. Steckl, “Matrix Addressed Black Dielectric Electroluminescent Displays for Automotive Use”, SID Vehicular Display Symp., Detroit, MI (Oct. 2002). 323. A. J. Steckl, J. Heikenfeld, D. S. Lee, Y. Wang and R. Jones, “Rare Earth Doped Gallium Nitride Phosphors–Growth, Properties and Fabrication of Electroluminescent Displays”, 2002 Int’l. Conf. Emissive Displays, Ghent, Belgium (Sept. 2002). 322. J. Heikenfeld and A. J. Steckl, “High Contrast Thick Dielectric Electroluminescent Displays on Glass Substrates”, Intl. Symp. Soc. Information Display, Boston, MA (May 2002). 321. E. E. Nyein, U. Hömmerich, J. Heikenfeld, D. S. Lee, A. J. Steckl, and J. M. Zavada, “Spectroscopic evaluation of rare earth doped GaN for full-color display applications”, Conf. Lasers and Electro-Optics, Long Beach, CA (May 2002). 320. E. E. Nyein, U. Hömmerich, J. Heikenfeld, D. S. Lee, A. J. Steckl, and J. M. Zavada, “Emission properties of Er-doped GaN as a function of Ga flux”, American Physical Society Meeting, Indianapolis, IN (March 2002). 319. A. J. Steckl, J. Heikenfeld, D. S. Lee, and C. Baker, “Rare Earth Doped Gallium Nitride – From Thin Film Growth to Photonic Applications”, Invited Presentation, SPIE Photonics West, Optoelectronics 2002, San Jose, CA (Jan. 2002). 318. U. Hömmerich, Ei Ei Nyein, J. T. Seo, A. Braud, J. Heikenfeld, D.S. Lee, A. J. Steckl, “Photoluminescence Studies of Erbium and Europium- doped Gallium Nitride prepared by Solid Source Molecular Beam Epitaxy”, Materials Research Soc. Meeting, Boston, MA (Nov. 2001). 317. D. S. Lee, J. Heikenfeld and A. J. Steckl, “Low-Temperature Growth of Rare-Earth-Doped GaN Luminescent Thin Films”, Materials Research Soc. Meeting, Boston, MA (Nov. 2001). 316. A. J. Steckl, R. Chi, B. Lee, I. Chyr, J. Cheng, and F. Beyette, “Focused Ion Beam Fabrication of Photonic Nanostructures”, Invited Presentation, Materials Research Soc. Meeting, Boston, MA (Nov. 2001). 315. J. Heikenfeld and A. J. Steckl, “Electroluminescent Display Devices on Glass Using a High Temperature Stable GaN-based Phosphor and Thick Film Dielectric Layer”, Materials Research Soc. Meeting, Boston, MA (Nov. 2001). 314. A. J. Steckl, J. Heikenfeld and D. S. Lee, “Rare-Earth-Doped GaN Phosphors for Electroluminescent Displays”, Int’l. Conf.Sci. Tech. Emissive Displays, San Diego, CA (Nov. 2001). 313. J. Heikenfeld and A. J. Steckl, “Low Cost Display Technology Utilizing Thick Dielectric Electroluminescent Devices on Glass Substrates”, SID Symp. Vehicle Displays, Detroit, MI, (Oct. 2001). 312. J. Heikenfeld and A. J. Steckl, “Flat Panel Display Materials Issues and Options for Rare Earth Doped GaN Electroluminescent Phosphors”, 43rd Electronic Materials Conference, Notre Dame, IN (June 2001). 311. L. Cheng, M. Pan, J. Scofield, and A. J. Steckl, “Growth and Doping of SiC Thin Films on Low-Stress, Amorphous Si3N4/Si Substrate for Robust MEMS Applications”, 43rd Electronic Materials Conference, Notre Dame, IN (June 2001). 310. D. S. Lee, J. Heikenfeld, M. Garter, A. J. Steckl, U. Hommerich, J. T. Seo, A. Braud, and J. Zavada, “Optimum Er Concentration for In-Situ Doped GaN Visible and IR Luminescence”, 43rd Electronic Materials Conference, Notre Dame, IN (June 2001). 309. J. Heikenfeld and A. J. Steckl, “Rare Earth Doped GaN Electroluminescent Devices for Robust Flat Panel Displays”, 59th Device Research Conference, Notre Dame, IN (June 2001). 308. C. J. Chi and A. J. Steckl, “Digital Thin Film Non-Volatile Optical Memory”, 59th Device Research Conference, Notre Dame, IN (June 2001). 307. J. M. Zavada, U. Hommerich, J. T. Seo, A. Braud, E. E. Nyein, J. Heikenfeld, D. S. Lee and A. J. Steckl, “Thermal Quenching Characteristics of Luminescence from RE Ions in GaN Thin Films”, 5th Int’l. Conf. On Excited States of Transition Elements, Wroclaw, Poland (June 2001). 306. C. J. Chi and A. J. Steckl, “Fabrication of Digital Thin Film Color Optical ROM by FIB Milling”, 45th Int’l. Conf. On Electron, Ion and Photon Beam Technology & Nanofabrication, Washington, DC (May 2001). 305. J. Cheng and A. J. Steckl, “Mg-Ga Liquid Metal Ion Sources for Implantation-Doping of GaN”, 45th Int’l. Conf. On Electron, Ion and Photon Beam Technology & Nanofabrication, Washington, DC (May 2001). 304. I. Chyr and A. J. Steckl, “Gas-Assisted Etching (I2 and XeF2) of FIB Milling on GaN”, 45th Int’l. Conf. On Electron, Ion and Photon Beam Technology & Nanofabrication, Washington, DC (May 2001). 303. E. E. Nyein, J. T. Seo, A. Blueitt, U. Hommerich, J. Heikenfeld, D. S. Lee and A. J. Steckl, “Optical Spectroscopy of Eu-doped GaN Prepared by Solid Source Molecular Beam Epitaxy”, American Physical Society Meeting (March 2001). 302. A. J. Steckl, “Rare Earth Doped Gallium Nitride – Light Emission From Ultraviolet to Infrared”, Seminar Presentation, Yale University, New Haven, CT (Feb.2001). 301. A. J. Steckl, “Rare Earth Doped GaN Electroluminescent Devices”, Invited Presentation, SPIE Photonics West Optoelectronics 2001, San Jose, CA (Jan. 2001). 300. A. J. Steckl, “Excitation Mechanisms in Rare Earth Doped GaN Electroluminescent Devices”, Invited Presentation, 31st Colloquium on the Physics of Quantum Electronics, Snowbird, Utah. (Jan. 2001). 299. A. S. Mitofsky, G. C. Pappen, S. G. Bishop, D. S. Lee, A. J. Steckl, J. T. Seo, and U. Hommerich, “Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In-Situ Doped GaN:Er and Implanted GaN”, Materials Research Soc. Meeting, Boston, MA (Nov. 2000). 298. J. Heikenfeld and A. J. Steckl, “AC Operation of GaN:Er Thin Film Electroluminescent Display Devices”, Materials Research Soc. Meeting, Boston, MA (Nov. 2000). 297. J. D. Scofield, B. N. Ganguly, A. J. Steckl, S. Dagupta, W. D. Cowan, “Development and Characterization of a SiC Surface Micromachining process”, 47th AVS Int’l. Symp., Boston, MA (Oct. 2000). 296. U. Hommerich, J. T. Seo, A. J. Steckl, and J. M. Zavada “Spectroscopic Evaluation of Erbium-Doped GaN for Optoelectronic Applications”, OSA/SPIE Meeting on Optoelectronics, Photonics, and Imaging, Charlotte, NC (Sept. 2000). 295. J. M. Zavada, U. Hommerich, J. T. Seo, A. J. Steckl, “Excitation Wavelength Dependent Photoluminescence Studies of Er-Doped GaN”, International Conference on 4f Tansitions, Madrid, Spain (Sept. 2000). 294. F. R. Beyette, J. J. Tang, B. K. Lee, R. C. J. Chi, A. J. Steckl, “Smart Optical Memory Read Head Device for Relational Database Systems”, SPIE Conference on Critical Technologies for the Future of Computing, San Diego, CA (July 2000). 293. B. Seshadri, J. J. Tang, I. Chyr, A. J. Steckl, F. R. Beyette, “Photoreceiver Array with Near Field Resolution Capability”, SPIE Conference on Critical Technologies for the Future of Computing, San Diego, CA (July 2000). 292. J. J. Tang, B. K. Lee, R. C. J. Chi, A. J. Steckl and F. R. Beyette, “Optoelectronic Page Oriented Database Filter Based on a Single Chip Photonic VLSI Design”, IEEE/LEOS Meeting on Electronic-Enhanced Optics, Miami, FL (July 2000). 291. L. C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I. Chyr, and A. J. Steckl, “Upconversion Luminescence from FIB-Er Implanted GaN Films”, Electronic Materials Conference, Denver, CO (June 2000). 290. J. Chen, A. J. Steckl, J. D. Scofield, “SiC Grown on Insulating Layers for Robust MEMS Applications”, Electronic Materials Conference, Denver, CO (June 2000). 289. A. J. Steckl, “Rare Earth Doped Gallium Nitride – Light Emission from the Ultraviolet to the Infrared”, Symposium on Rare Earth Doped Semiconductors, European Materials Research Society Meeting, May-June 2000, Strasbourg, France (May-June 2000). 288. A. J. Steckl, “Rare Earth Doped Gallium Nitride – A New Aprroach to the Pursuit of Light” Invited presentation, Symposium on Electronic and Photonic Materials in the 21st Century, Electrochemical Society Meeting, May 2000, Toronto. 287. R. Chi and A. J. Steckl, “Optical Memory Characterization Test System Integration Using LabVIEW”, National Instruments VIP Symposium, Detroit, MI (May 2000). 286. J. T. Seo, U. Hommerich, R. Birkhahn, A. J. Steckl, and J. M. Zavada, “Optical Spectroscopy of Er-doped GaN Prepared by Solid Source MBE”, American Physical Society March Meeting, Minneapolis, MI (March 2000). 285. P. H. Citrin, P. A. Northrup, R. Birkhahn, and A. J. Steckl, “Local Structure of Er in GaN:Er Films Exhibiting Visible Luminescence”, American Physical Society March Meeting, Minneapolis, MI (March 2000). 284. A. J. Steckl, “Optical Properties and Photonic Devices Using Rare-Earth-Doped GaN”, Invited presentation, Colloquium on the Physics of Quantum Electronics , Snowbird, Utah (Jan. 2000). 283. P. Citrin, P. A. Northrup, R. Birkhahn, and A. J. Steckl, “Er Local Structure in GaN by EXAFS Analysis”, Physics of Compound Semiconductor Interfaces, Salt Lake City, Utah (Jan. 2000). 282. A. J. Steckl, “Rare Earth Doped GaN: Emission of Light from the Ultraviolet to the Infrared”, Seminar at Case Western Reserve University, Cleveland, OH (Dec. 1999). 281. U. Hommerich, J. T. Seo, J. D. MacKenzie, C. R. Abernathy, R. Birkhahn, A. J. Steckl, and J. M. Zavada, “Comparison of the Optical Properties of Er-doped GaN Prepared by Metalorganic and Solid Source MBE”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 280. L. C. Chao, B. K. Lee, R. C. J. Chi, J. Cheng, R. Birkhahn, and A. J. Steckl, “ Thermal-Annealing Activated Upconversion Luminescence from FIB-Er Implanted GaN Films”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 279. J. Chen, A. J. Steckl and J. D. Scofield, “Growth of SiC Films on Insulators for Robust MEMS Applications”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 278. R. C. J. Chi, B. K. Lee, D. Chao, J. Cheng, I. Chyr, and A. J. Steckl, “ Optical Memory Using Bi-Photonic Upconversion in Er FIB-implanted GaN”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 277. R. Birkhahn, J. Heikenfield, M. Garter, D.S. Lee, A. J. Steckl, P.H. Citrin, P. A. Northrup, K. Lorenz, R. Vianden, M.F. da Silva, J.C. Soares, E. Alves, A. Saleh, J. M. Zavada, “Ga and Er Site Competition in GaN:Er Films Exhibiting Visible Luminescence”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 276. D. S. Lee, R. Birkhahn, J. Heikenfeld, M. J. Garter, and A. J. Steckl, “Mixed Color Emission from GaN co-doped with Er3+/Eu3+ or Er3+/Tm3+”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 275. M. J. Garter, B. K. Lee, R. Birkhahn, J. Heikenfeld, D. S. Lee, and A. J. Steckl, “ Strong 1.5 µm Emission from Er-doped GaN Electroluminescent Devices at 400K”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 274. J. Heikenfeld, M. J. Garter, D. S. Lee, R. Birkhahn, and A. J. Steckl, “Low Voltage GaN:Er Electroluminescent Devices”, Materials Research Soc. Conference, Boston, MA (Dec. 1999). 273. . J. Steckl, R. Birkhahn, M. Garter, L. C. Chao, D. S. Lee, and J. Heikenfeld, "Rare Earth Activated GaN Light Emitting Devices", Int’l. Conf. on SiC and Related Materials, Research Triangle Park, NC (Oct. 1999). 272. J. Chen, A. J. Steckl, M. J. Loboda, "Growth and Characterization of N-Doped SiC Films from Trimethylsilane", Int’l. Conf. on SiC and Related Materials, Research Triangle Park, NC (Oct. 1999). 271. K. Lorenz, R. Vianden, R. Birkhahn, A. J. Steckl, M. F. da Silva, J. C. Soares, E. Alves, "RBS/Channeling Study of Er-doped GaN Films Grown by MBE on (111) Si Substrates", 14th Int’l. Ion Beam Analysis Conference, Dresden, Germany, July 1999. 270. A. J. Steckl, R. Birkhahn, M. Garter, L. C. Chao, D. L. Lee and J. Heikenfeld, "Optical Properties of Rare-Earth-Doped GaN and Related Light Emitting Devices", 41st Electronic Materials Conference, Santa Barbara, CA, July 1999. 269. A. J. Steckl, M. Garter, and R. Birkhahn, "Visible and Infrared Electroluminescence from Er-doped GaN Schottky Diodes", Device Research Conference, Santa Barbara, CA, June 1999. 268. I. Chyr and A. J. Steckl, "The Micromachining of GaN and its Substrates by FIB Milling and Related Photonic Applications", 43rd Intl. Conf. Electron, Ion and Photon Beam Technology, Marco Island, FL, June 1999. 267. L. C. Chao and A. J. Steckl, "Development of Er-Ni and Pr-Pt Liquid Alloy Ion Sources", Invited Paper, 43rd Intl. Conf. Electron, Ion and Photon Beam Technology, Marco Island, FL, June 1999. 266. A. J. Steckl, R. Birkhahn, M. Garter, "Rare Earth Luminescence in GaN and Related Device Performance", Materials Research Society Meeting, San Francisco, CA, April 1999. 265. A. J. Steckl, J. Chen, and M. J. Loboda, "Large Area SiC Virtual Wafers Using Growth on Si", Invited Presentation, Materials Research Society Meeting, San Francisco, CA, April 1999. 264. A. J. Steckl, " Rare Earth Doped GaN – A New Approach to the Pursuit of Light ", Graduate Seminar, Electrical Engineering Department, University of Louisville, Louisville, KY, March 1999. 263. F. J. Pacheco, A. M. Sanchez, S. I. Molina, D. Araujo, R. Garcia, and A. J. Steckl, "Effect of the temperature ramp rate during carbonization of Si (111) on the obtained SiC crystalline quality", Microscopy of Semiconducting Materials XI Conference, Oxford, UK, March 1999. 262. A. J. Steckl, "FIB Fabrication of Photonics for High Speed Computing", Seminar at National Security Agency, Ft. Meade, MD, March 1999. 261. A.J. Steckl, J. Chen and M.J. Loboda, "Growth and Applications of Thick 3C-SiC Films on Si", Workshop on Wide Bandgap Bipolar Devices, Panama City, FL, Jan. 1999. 260. B. Lee, C.J. Chi, A.J. Steckl, "Optical Memory Using Biphotonic Stimulation in Rare-Earth-Doped Glass", Materials Research Society Meeting, Boston, MA, Dec. 1998. 259. M.J. Garter, R.H. Birkhahn, A.J. Steckl, J.D. Scofield, "Visible Electroluminescence from Er-doped GaN Schottky Diodes", Materials Research Society Meeting, Boston, MA, Dec. 1998. 258. I. Chyr, and A.J. Steckl, "Focused Ion Beam Micromachining of GaN Photonic Devices", Materials Research Society Meeting, Boston, MA, Dec. 1998. 257. R.H. Birkhahn, D.S. Lee, R.A. Hudgins, A.J. Steckl, J.D. Scofield, A. Saleh, R.G. Wilson and J.M. Zavada, "Growth and Properties of Green Emitting Er-doped GaN", Materials Research Society Meeting, Boston, MA, Dec. 1998. 256. A.J. Steckl, V. Saxena, "SiC Schottky Diodes: The Essential Device for High Voltage, High Temperature Operation", Invited Paper, 9th International Symposium on the Physics of Semiconductors and Applications, Seoul, Korea, Nov. 1998. 255. R.H. Birkhahn, R.A. Hudgins, D. Lee, A.J. Steckl, R.J. Molnar and J.M. Zavada, "Growth and Morphology of Er-doped GaN on Sapphire and HVPE Substrates", North American MBE Conference, State College, PA, Oct. 1998. 254. A.J. Steckl, J. Devrajan, S. Madapura, and J. Chen, "SiC Thin Film Growth on Si: Mechanisms and Applications", Invited Paper, 10th Int’l. Conf. on Vapor Growth and Epitaxy, Jerusalem, Israel, July 1998. 253. S. Madapura, A.J. Steckl, and M.J. Loboda, "High Growth Rate of Silicon Carbide on Silicon (111) Substrates by Chemical Vapor Deposition Using Trimethylsilane", Electrochemical Society Meeting, San Diego, CA, May 1998. 252. A.J. Steckl, B. Lee, J.M. Zavada and R.G. Wilson, "The Effect of Hydrogen Introduction in Photoluminescence of 3C-SiC Crystals", Materials Research Society Meeting, San Francisco, CA, April 1998. 251. A.J. Steckl, B. Lee, and R. Chi, "3-D Optical Memory using Rare Earth Doped Materials", Workshop on New Concepts in 3-D Optical Devices Using Rare-Earths and Other Novel Approaches, Asilomar, CA, April 1998. 250. V. Saxena and A.J. Steckl, "High Temperature Operation of 4H and 6H SiC High Voltage Schottky Diodes", Invited Paper, International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 1997. 249. J. Chen, R. Birkhahn and A.J. Steckl, "Growth of SiC and GaN Thin Films by Gas Sources MBE", Ohio MatNet Symposium, Bowling Green, OH, Nov. 1997, 248. J. Chen and A.J. Steckl, "MBE Growth of SiC on Si (111) with SCB", North American Conf. on Molecular Beam Epitaxy, Ann Arbor, MI, Oct. 1997. 247. J. Chen and A.J. Steckl, "Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane", Int’l Conf. SiC and III-Nitrides, Stockholm, Sept. 1997. 246. V. Saxena and A.J. Steckl, "High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization", Int’l Conf. SiC and III-Nitrides, Stockholm, Sept. 1997. 245. V. Saxena and A.. Steckl, "Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3", Int’l Conf. SiC and III-Nitrides, Stockholm, Sept. 1997. 244. J. Devrajan, A.J. Steckl, C. Tran, and R.A. Stall, "Optical Properties of GaN Films Grown on SiC/Si", Int’l Conf. SiC and III-Nitrides, Stockholm, Sept. 1997. 243. A.J. Steckl, "A Review of Focused Ion Beam Implantation for the Fabrication of Optoelectronic Components", Invited Paper, Scanning Microscopy International Conference, Symposium on Nanometer Ion Beams, Chicago, May 1997. 242. A.J. Steckl and K. Saxena, "Development of SiC Schottky Diodes for Power Electronic Applications", SAE Aerospace Power Systems Conf., Williamsburg, VA., April 1997. 241. A.J. Steckl, J.Devrajan, C. Tran, R.A. Stall, "SiC Based Substrates for Growth of GaN Thin Films", 4th Wide Bandgap Nitride Workshop, St. Louis, Mo., March 1997. 240. A.J. Steckl, "Exploring the Frontiers of Optoelectronics with FIB Technology", Invited Paper, Workshop on Frontiers of Electronics, Tenerife, Spain, Jan. 1997. 239. C. Tran, I. Ferguson, R. Karlicek, R. Stall, J. Devrajan and A.J. Steckl, "The Growth of GaN 3C SiC SOI Compliant Substrates", 23rd IEEE Int’l. Symposium on Compound Semiconductors, St. Petersburg, Russia, Sept. 1996. 238. A.J. Steckl, J. Devrajan, C. Tran, H.E. Jackson, S. Tlali, S.N. Gorin and L.M. Ivanova, "Characterization of 3C-SiC Crystals grown by Thermal Decomposition of Methyltrichlorosilane", Electronic Materials Conference, Santa Barbara, CA, June 1996. 237. A.J. Steckl, J. Devrajan, C. Tran, R.A. Stall, "SiC RTCVD Carbonization of the (111) Si SOI Structure and subsequent MOCVD growth of GaN", Electronic Materials Conference, Santa Barbara, CA, June 1996. 236. V. Saxena, A.J. Steckl, M. Vichare, M.L. Ramalingam, and K. Reinhardt, "Temperature Effects in the Operation of High Voltage Ni/6H-SiC Schottky Rectifiers", 3rd International Conference on High Temperature Electronics, Albuquerque, NM, June 1996.. 235. A. J. Steckl, J. Devrajan, C. Tran, Z.C. Feng, and R. Karlicek, "SiC SOI Substrates for GaN Growth", 3rd Nitride Workshop, St. Louis, Mo., March, 1996. 234. R. Gass, P. Chen, A. J. Steckl, H. E. Jackson, "Model for Selective Compositional Mixing in Al GaAs/GaAs Superlattices Induced by FIB Implantation", American Physical Society Meeting, St. Louis, MO, March 1996. 233. A. J. Steckl, "Focused Ion Beam Fabrication of Optoelectronic Components", ARO Workshop on Low Power Optoelectronics, Lake Arrowhead, CA, Jan. 1996. 232. A.J. Steckl, "Light Emission from Porous Si: Mechanisms and Devices," Miami University Invited Seminar, November 1995. 231. J.N. Su and A.J. Steckl, "Fabrication of High Voltage SiC Schottky Barrier Diode for High Temperature Applications and Study of Thermal Effect on Ni/6H-SiC Metallization," Electrochemical Society Meeting, Chicago, IL, October 1995. 230. V. Saxena and A.J. Steckl, "Sub-Micron Patterning of 6H-SiC by Anisotropic Reactive Ion Etching," Electrochemical Society Meeting, Chicago, IL, October 1995. 229. J.N. Su and A.J. Steckl, "Fabrication of High Voltage SiC Schottky Barrier Diodes by Ni Metallization," 1995 International Conference on Silicon Carbide and Related Materials, Kyoto, Japan, September 1995. 228. C. Yuan, A.J. Steckl, J. Chaudhuri, R. Thokala and M.J. Loboda, "Growth of Crystalline 3C-SiC Films on 6H-SiC at 900°C by Chemical Vapor Deposition from Silacyclobutane," 1995 International Conference on Silicon Carbide and Related Materials, Kyoto, Japan, September 1995. 227. P.H. Yih, V. Saxena and A.J. Steckl, "SiC Reactive Ion Eteching Conditions for the Fabrication of Semiconductor Devices," 1995 International Conference on Silicon Carbide and Related Materials, Kyoto, Japan, September 1995. 226. A.J. Steckl, P. Chen, H.E. Jackson, A.G. Choo, X. Cao, J.T. Boyd and M. Kumar, "Fabrication of Optoelectronic Devices Using FIB Implantation of AlGaAs/GaAs Superlattice Structures," International Conference on Superlattices and Nanostructures, Cincinnati, OH, August 1995. 225. J. Devrajan, A.J. Steckl, W.J. Choyke, R.P. Devaty, M. Yoganathan and S.W. Novak, "Effect of Annealing Temperature on 1.5 µm Photoluminescence at 25°C from Er-Implanted 6H-SiC," Electronic Materials Conference, Charlottesville, VA, June 1995. 224. J.N. Su, A.J. Steckl and R.L. Moore, "Effect of Anneal on Determining High Performance Ni-SiC Electrical Contacts," Electronic Materials Conference, Charlottesville, VA, June 1995. 223. J.N. Su, V. Saxena and A.J. Steckl, "Low Resistivity Ni Interconnect Films by Sputter Deposition at Elevated Temperature," Electronic Materials Conference, Charlottesville, VA, June 1995. 222. A.J. Steckl, P. Chen, H.E. Jackson, A.G. Choo, X. Cao, J.T. Boyd and M. Kumar, "FIB Implantation for the Fabrication of GaAs-based Optoelectronic Devices," Electron, Ion and Photon Beam Technology and Nanofabrication, Scottsdale, AZ, June 1995. 221. J.N. Su and A.J. Steckl, "300°C Operation of High Voltage SiC Schottky Rectifier," Workshop on High Temperature Power Electronics for Vehicles, Ft. Monmouth, NJ, April 1995. 220. X.L. Cao, A.J. Steckl, P. Chen, H.E. Jackson, M. Kumar and J.T. Boyd, "Distributed Bragg Reflection Laser Fabricated by Focused Ion Beam Implantation," American Physical Society, San Jose, CA, March 1995. 219. H.E. Jackson, X.L. Cao, A.G. Choo, P. Chen, A.J. Steckl and L.M. Smith, "Temporally and Spatially Resolved Photoluminescence from FIB Patterned Wire-Like Structures," American Physical Society, San Jose, CA, March 1995. 218. J.N. Su and A.J. Steckl, "High Field Ni-SiC Schottky Barrier Diodes with Single-Metal Process," American Vacuum Society Meeting, Denver, Colorado, October 1994. 217. C. Yuan, A.J. Steckl, J. Chaudhuri, R. Thokala and M.J. Loboda, "Low Temperature Epitaxy of SiC Film on 6H-SiC by CVD from Silacyclobutane," American Vacuum Society Meeting, Denver, Colorado, October 1994. 216. J. Xu and A.J. Steckl, "Stain-Etched Porous Si Visible Light Emitting Diodes," American Vacuum Society Meeting, Denver, Colorado, October 1994. 215. H.E. Jackson, M. Kumar, V. Gupta, G.N. DeBrander, P. Chen, J.T. Boyd, A.J. Steckl, A.G. Choo, R.D. Burnham and S.C. Smith, "Optical Channel Waveguides Formed by Focused Ion Beam Induced Compositional Mixing in AlGaAs MQW's," 7th International Conference on Superlattices, Banff, Canada, August 1994. 214. J. Xu and A.J. Steckl, "Spin-Cast Polyaniline Films as Transparent Electrodes for Porous Si Optoelectronic Devices," Electronic Materials Conference, Boulder, CO, June 1994. 213. H.C. Mogul, J. Xu, A.J. Steckl, S.J. Clarson, J.O. Stuart and C.L. Hoffman, "Light Emission and Related Materials Properties of Siloxene and Si-based Zeolites," Electrochemical Society 7th International Society Symposium on Si Materials Science and Technology, San Francisco, CA, May 1994. 212. A.J. Steckl, C. Yuan, Q-Y. Tong, U. Gösele and M.J. Loboda, "SiC SOI Structures by Carbonization and Growth with SCB," Electrochemical Society Symposium on Silicon-on-Insulator Technology and Devices, San Francisco, CA, May 1994. 211. J. Xu, H.C. Mogul and A.J. Steckl, "Visible Photoluminescence from Stain-Etched Silicon Nanostructures," Electrochemical Society Symposium on Quantum Confinement, San Francisco, CA, May 1994. 210. A.J. Steckl, "FIB Implantation Mixing of GaAs/AlGaAs Superlattices: Mechanisms and Optoelectronic Applications," International Workshop on Ion MicroBeams, Rottach-Egern, Germany, May 1994. 209. J.N. Su and A.J. Steckl, "SiC Devices for Space Electronics-High Voltage Temperature Hard Contacts," SAE Aerospace Meeting, Dayton, OH, April 1994. 208. X.L. Cao, A.G. Choo, P. Chen, A.J. Steckl, L.M. Smith and H.E. Jackson, "Temporally Resolved Photoluminescence from Patterned GaAs/AlGaAs MQWs," American Physical Society Meeting, Pittsburgh, PA, March 1994. 207. A.G. Choo, X.L. Cao, S. Tlali, P. Chen, A.J. Steckl and H.E. Jackson, "Raman and Photoluminescence Characterization of FIB Patterned AlGaAs/GaAs MQWs," American Physical Society Meeting, Pittsburgh, PA, March 1994. 206. A.J. Steckl, J. Xu, H.C. Mogul and S.M. Prokes, "Correlation Among Crystallinity, Si Hydrides and Photoluminescence in Stain-Etched Poly and Amorphous Si Films," American Physical Society Meeting, Pittsburgh, PA, March 1994. 205. A.J. Steckl, "Focused Ion Beam Implantation of III-V Superlattice Structures," Ion Implant Users Group Meeting, NIST, Gaithersburg, MD, January 1994. 204. A.J. Steckl and J.N. Su, "High Voltage, Temperature-Hard 3C-SiC Schottky Diodes Using All-Ni Metallization," International Electron Devices Meeting, Washington, DC, December 1993. 203. A.G. Choo, S. Tlali, H.E. Jackson, J.P. Li and A.J. Steckl, "Raman Scattering Characterization of Ultrathin Films of ß-SiC," Materials Research Society Meeting, Boston, MA, November 1993. 202. A.G. Choo, X.L. Cao, S. Tlali, H.E. Jackson, P. Chen, A.J. Steckl and J.T. Boyd,"Raman and Photoluminescence Characterization of FIB Patterned AlGaAs/ GaAs Multiple Quantum Wells," Materials Research Society Meeting, Boston, MA, November 1993. 201. X.L. Cao, A.G. Choo, L.M. Smith, H.E. Jackson, P. Chen and A.J. Steckl, "Time-Resolved Photoluminesence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures," Materials Research Society Meeting, Boston, MA, November 1993. 200. H.Q. Yan, H. Wang and A.J. Steckl, "Low Energy Ion Beam Assisted Deposition of Low Resistivity Al Using TMAA," Materials Research Society Meeting, Boston, MA, November 1993. 199. P. Chen and A.J. Steckl, "Vacancy Enhanced Al-Ga Inter-Diffusion in Si FIB-Implanted Superlattice," Materials Research Society Meeting, Boston, MA, November 1993. 198. M.D. Roth, A.J. Steckl, J.P. Li, J. Edgar and Z.J. Yu, "Atomic Force Microscopy of AlN Thin Films," presented at the 5th International Conference on SiC and Related Materials, Washington, DC, November 1993. 197. A.J. Steckl, J.N. Su, P.H. Yih, C. Yuan and J.P. Li, "Ohmic and Rectifying Contacts to 3C-SiC Using All-Ni Technology," presented at the 5th International Conference on SiC and Related Materials, Washington, DC, November 1993. 196. P.H. Yih and A.J. Steckl, "High Breakdown Voltage SiC/Si Heterojunction Diodes by Rapid Thermal Chemical Vapor Deposition with Methylsilane," presented at the 5th International Conference on SiC and Related Materials, Washington, DC, November 1993. 195. A.J. Steckl, C. Yuan, J.P. Li and M.J. Loboda, "Reduced Temperature Heteroepitaxial Growth of 3C-SiC on Si (100) from Silacyclobutane," presented at the 5th International Conference on SiC and Related Materials, Washington, DC, November 1993. 194. P.H. Yih and A.J. Steckl, "Reactive Ion Etching of 6H-SiC in CHF3 Plasma," presented at the 5th International Conference on SiC and Related Materials, Washington, DC, November 1993. 193. Q.Y. Tong, U. Gösele, C. Yuan and A.J. Steckl, "A Feasability Study of SiC on Oxide by Wafer Bonding and Layer Transferring," 1993 IEEE International SOI Conference, Palm Springs, California, October 1993. 192. A.J. Steckl, "Research in Nanoelectronics," Seminar in the Materials Science and Engineering Department, University of Cincinnati, Cincinnati, Ohio, May 1993. 191. A.J. Steckl, J.N. Su, P.H. Yih, C. Yuan and J.P. Li, "Effect of Deposition and Anneal Temperature on Ni Metallization for Ohmic and Rectifying Contacts to SiC Diodes," Tri-Service SiC Workshop, Naval Research Laboratory, Washington, DC, May 1993. 190. A.J. Steckl, J. Su, J. Xu, C. Yuan and H.C. Mogul, "Selective Photoluminescence from Anodically Etched SiC/Si Structure," Materials Research Society Meeting, San Francisco, California, April 1993. 189. A.J. Steckl, J. Xu and H.C. Mogul, "Photoluminescence from Stain-Etched Amorphous and Poly-Crystalline Porous Silicon Films," Materials Research Society Meeting, San Francisco, California, April 1993. 188. A.G. Choo, J.P. Li, S. Tlali, A.J. Steckl and H.E. Jackson, "Raman Scattering from Ultrathin Films of ß-SiC Grown by RTCVD," American Physical Society Meeting, Seattle, Washington, March 1993. 187. X.L. Cao, A.G. Choo, P. Chen, A.J. Steckl, L.M. Smith and H.E. Jackson, "Spatially and Temporally Resolved Photoluminescence Spectra from Excitons in Patterned GaAs/AlGaAs MQWs," American Physical Society Meeting, Seattle, Washington, March 1993. 186. H.E. Jackson, A.G. Choo, X.L. Cao, M. Kumar, P. Chen, A.J. Steckl and J.T. Boyd, "Enhanced Photoluminescence from GaAs/AlGaAs Superlattice Structures Patterned by Focused Ion Beam Implantation," American Physical Society Meeting, Seattle, Washington, March 1993. 185. J.T. Boyd, H.E. Jackson and A.J. Steckl, "Quantum Wire Nanostructures in Multiple Quantum Well Optical Waveguides: Enhanced Nonlinear Optical Interactions," Workshop on Nonlinear Optical Properties of Quantum-Wire Nanostructures, Wright-Patterson Air Force Base, Dayton, Ohio, February 1993. 184. A.J. Steckl, J. Xu, H.C. Mogul and J. Su, "Extending the Photoluminescence of Crystalline Si to Other Structures and Compounds," International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon, Charlotte, North Carolina, February 1993. 183. J.P. Li and A.J. Steckl, "AFM Study of Nucleation and Void Formation in SiC Carbonization of Si," Materials Research Society Meeting, Boston, Massachusetts, December 1992. 182. A.J. Steckl J. Xu and H.C. Mogul, "Effect of Doping on the Formation of Porous Si and its Application in Realizing Localized Photoemission," Materials Research Society Meeting, Boston, Massachusetts, December 1992. 181. M. Kumar, G. Debrabander, P. Chen, J.T. Boyd, A.J. Steckl, A.G. Choo, H.E. Jackson, R.D. Burnham and S.C. Smith, "Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by FIB-Induced Composition Mixing," Materials Research Society Meeting, Boston, Massachusetts, December 1992. 180. A.J. Steckl, P. Chen, A.G. Choo, H. Jackson, J.T. Boyd, S.W. Novak, A. Ezis, A.K. Rai, P.P. Pronko and R.M. Kolbas, "Enhanced Photoluminescence from AlGaAs/GaAs Superlattice Gratings Fabricated by Si FIB Implantation," Materials Research Society Meeting, Boston, Massachusetts, December 1992. 179. A.J. Steckl, P. Chen, J.T. Boyd, M. Kumar, H. Jackson, A.G. Choo, A. Ezis, A.K. Rai and P.P. Pronko, "Focused Ion Beam Mixing of AlGaAs Superlattice Structures for Optoelectronic Device Fabrication," ONR Workshop on Optoelectronics, Charlottesville, Virginia, November 1992. 178. A.J. Steckl, "Rapid Thermal Chemical Vapor Deposition of SiC Thin Films on Si," Seminar at WPAFB Materials Laboratory, Dayton, Ohio, September 1992. 177. A.J. Steckl and P. Yih, "Residue-Free Reactive Ion Etching of SiC," ONR Workshop on SiC Materials and Devices, Charlottesville, Virginia, September 1992. 176. A.J. Steckl, J. Xu and H.C. Mogul, "Effect of Doping on Photoluminescence in Porous Si Nanostructures," ARO Workshop on Nanostructure for Optoelectronics, UCLA, Los Angeles, California, August 1992. 175. A.J. Steckl, "SiC Thin Film Growth and Device Fabrication Technology," Seminar at Dow Corning Research Center, Midland, Michigan, June 1992. 174. A.J. Steckl, "Research in Silicon Carbide and Other Wide Band-Gap Semiconductors," Seminar at BP Research, Cleveland, Ohio, May 1992. 173. A.J. Steckl, "SiC Technology: Thin Film Growth, Device Processing and Surface Analysis," Seminar at NASA Lewis Research Center, Cleveland, Ohio, April 1992. 172. A.J. Steckl, "Rapid Thermal Chemical Vapor Deposition of ß-SiC Thin Films on Si," Seminar at Case Western Reserve University, Cleveland, Ohio, April 1992. 171. A.J. Steckl and M.D. Roth, "Atomic Probe Microscopy of AlN," Workshop on Wide-Gap Nitrides, St. Louis, Missouri, April 1992. 170. .A.J. Steckl, "Thin Film Growth of ß-SiC on Si by Rapid Thermal Chemical Vapor Deposition," Seminar at Allied-Signal Research and Technology, Morristown, New Jersey, March 1992. 169. H.E. Jackson, A.G. Choo, B.L. Weiss, J.T. Boyd, A.J. Steckl, P. Chen, R.D. Burnham, S.C. Smith, "Raman and Photoluminescence Characterization of AlGaAs Superlattice Structures Formed by Focused Ion Beam Implantation," SPIE's 1992 Symposium on Compound Semiconductor Physics and Devices, Somerset, New Jersey, March 1992 168. A.J. Steckl, H.C. Mogul and S. Mogren, "Fabrication of Si Nanostructures by FIB Implantation and Anisotropic Etching," SPIE's 1992 Symposium on Compound Semiconductor Physics and Devices, Somerset, New Jersey, March 1992. 167. S. Mogren, M. Roth, J.P. Li and A.J. Steckl, "Atomic Imaging of SiC Thin Films Heteroepitaxially Grown on Si," SPIE's 1992 Symposium on Compound Semiconductor Physics and Devices, Somerset, New Jersey, March 1992. 166. A.G. Choo, H.E. Jackson, P. Chen, A.J. Steckl and J.T. Boyd, "Photoluminescence Characterization of CIB and FIB Implanted AlGaAs Multiple Quantum Wells," American Physical Society Meeting, Indianapolis, Indiana, March 1992. 165. H.E. Jackson, A.G. Choo, P. Chen, A.J. Steckl and J.T. Boyd, "Raman Scattering from Focused Ion Beam Induced Compositionally Disordered AlGaAs Multiple Quantum Wells," American Physical Society Meeting, Indianapolis, Indiana, March 1992. 164. O.M.R. Chyan, D.G. Frank, A.T. Hubbard, J.P. Li and A.J. Steckl, "Angular Distribution Auger Microscopy Studies of Epitaxial ß-SiC on Si (100)," American Physical Society Meeting, Indianapolis, Indiana, March 1992. 163. A.J. Steckl, "SiC-on-Si: RTCVD Thin Film Growth and RIE Patterning," Seminar at AT&T Bell Laboratories, Murray Hill, NJ, January 1992. 162. A.J. Steckl, H.C. Mogul and S. Mogren, "Si Nanostructure Fabrication by FIB Selective Doping and Anisotropic Etching," Materials Research Society Meeting, Boston, Massachusetts, December 1991. 161. A.G. Choo, H.E. Jackson, P. Chen, A.J. Steckl, V. Gupta and J.T. Boyd, "Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices," Materials Research Society Meeting, Boston, Massachusetts, December 1991. 160. A.G. Choo, V. Gupta, H.E. Jackson, J.T. Boyd, A.J. Steckl, P. Chen, B.L. Weiss and R.D. Burnham, "Raman and Photoluminescence Characterization in AlGaAs Superlattice Channel Waveguide Structures Formed by CIB and FIB Implantation," Materials Research Society Meeting, Boston, Massachusetts, December 1991. 159. A.J. Steckl and J.P. Li, "Effect of Carbonization Gas Precursor on the Heteroepitaxial Growth of SiC-on-Si by RTCVD," Materials Research Society Meeting, Boston, Massachusetts, December 1991. 158. A.J. Steckl, P. Chen, A. Choo, H. Jackson, J.T. Boyd, P.P. Pronko, A. Ezis, R. Kolbas, "Dose Effects in Si FIB-Mixing of Short Period AlGaAs/GaAs Superlattice Structures," Materials Research Society Meeting, Boston, Massachusetts, December 1991. 157. A.J. Steckl and P.H. Yih, "Residue-Free Reactive Ion Etching of SiC in CHF3/O2 Plasma with H2 Additive," 4th International Conference on Silicon Carbide, Santa Clara, California, October 1991. 156. A.J. Steckl and J.P. Li, "Low Pressure Rapid Thermal CVD of SiC-on-Si," 4th International Conference on Silicon Carbide, Santa Clara, California, October 1991. 155. A.J. Steckl, J.P. Li, C. Yuan and P. Moreton, "Rapid Thermal Processing of SiC-Si Heteroepitaxial Structures," Invited Paper at SPIE Symposium on Microelectronic Processing Integration, San Jose, California, September 1991. 154. A.J. Steckl and J.P. Li, "Hetero-Epitaxial Growth of Nanometer SiC Thin Films on Si by RTCVD," International Workshop on Science and Technology of Thin Films for the 21st Century, Evanston, Illinois, July 1991. 153. A.J. Steckl and J.P. Li, "Effect of C3H8 Flow Rate on the Nucleation and Hetero-Epitaxial Growth of SiC on Si," Electronic Materials Conference, Boulder, Colorado, June 1991. 152. A.J. Steckl, H.C. Mogul, C.W. Magee and S.W. Novak, "Low Energy Off-Axis FIB Ga+ Implantation into Si," 1991 Symposium on Electron, Ion and Photon Beams, Seattle, Washington, May 1991. 151. A.J. Steckl, "Research in Semiconductor Nanostructures," Seminar at the Center for Materials Research, Ohio State University, Columbus, Ohio, May 1991. 150. A.J. Steckl, "FIB Operation and Applications to Semiconductor Nanofabrication," Seminar at Ft. Meade Microelectronics Research Laboratory, Ft. Meade, Maryland, April 1991. 149. A.J. Steckl, "Heteroepitaxial Growth of SiC on Si by RTCVD," U.S. Navy SiC Materials and Technology Review, Washington, D.C., April 1991. 148. A.J. Steckl, "Nucleation and Growth During Rapid Thermal Chemical Vapor Deposition of SiC on Si," Seminar at North Carolina State University Materials Science and Engineering Department, Raleigh, North Carolina, March 1991. 147. S.W. Novak, C.W. Magee, A.J. Steckl and H.C. Mogul, "SIMS Depth Profiling of Nanometer-Scale p-n Junctions Fabricated by Ga+ FIB Implantation," 1st International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, North Carolina, March 1991. 146. A. Choo, V. Gupta, P. Chen, S. Mogren, A. Steckl, J. Boyd and H. Jackson, "Raman Study of Si Focused Ion Beam Implanted GaAs-AlxGa1-xAs Superlattice," American Physical Society Meeting, Cincinnati, Ohio, March 1991. 145. A. Choo, V. Gupta, P. Chen, S. Mogren, A. Steckl, J. Boyd and H. Jackson, "Spatially Resolved Photoluminescence in Focused Si Ion Beam Implanted AlxGa1-xAs-AlyGa1-yAs Superlattice," American Physical Society Meeting, Cincinnati, Ohio, March 1991. 144. A.J. Steckl and J.P. Li, "Rapid Thermal Chemical Vapor Deposition of SiC on Si," Washington Materials Forum, Washington, D.C., March 1991. 143. A.J. Steckl, "Focused Ion Beam Nanofabrication of Semiconductor Devices," Seminar at Purdue University, W. Lafayette, Indiana, February 1991. 142. A.J. Steckl, H. Mogul and S. Mogren, "Electrical Properties of Nanometer-Scale Si p+-n Junctions Fabricated by Low Energy Ga+ FIB Implantation," US-Japan Focused Ion Beam Seminar, Portland, Oregon, December 1990. 141. S. Mogren and A.J. Steckl, "STM Characterization of Focused Ion Beam Profiles," MRS Symposium on Nanostructures, Boston, Massachusetts, December 1990. 140. A.J. Steckl, P. Chen and S. Mogren, "FIB Implantation into AlGaAs/GaAs Superlattice Structures," International Conference on Ion Beam Modification of Materials, Knoxville, Tennessee, September 1990. 139. A.J. Steckl, H.C. Mogul and S.M. Mogren, "Ultrashallow Si p+-n Junction Fabrication by Low Energy Ga+ Focused Ion Beam," 1990 Symposium on Electron, Ion and Photon Beams, San Antonio, Texas, June 1990. 138. A.J. Steckl, "Nanoelectronics Research at the University of Cincinnati," Seminar at the Microelectronics and Computer Technology Corp., Austin, Texas, May 1990. 137. A.J. Steckl, "Nanoelectronics: The Next Semiconductor Revolution," Colloquium at the Institute of Advanced Manufacturing Sciences, Cincinnati, May 1989. 136. A.J. Steckl, C-M. Lin, D. Patrizio, A.K. Rai and P.P. Pronko, "Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions," Materials Res. Soc. Symposium, San Diego, April 1989. 135. W.S. Pan and A.J. Steckl, "Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films," Second International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Washington, D.C., December 1988. 134. A.J. Steckl, C.-M. Lin and T.P. Chow, "Fabrication of 100nm p-n Junctions by Focused and Broad Beam Ion Implantation," Electrochemical Society Meeting, First International Symposium on Focused Ion Beam Technology, Chicago, Illinois, October 1988. 133. A.J. Steckl, "Application of Focused Ion Beam Technology to CCD and Other Semiconductor Device Fabrication," Seminar at Jet Propulsion Laboratory, Pasadena, California, September 1988. 132. W.S. Pan and A.J. Steckl, "Reactive Ion Etching for SiC Device Fabrication," First International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Washington, D.C., December 1987. 131. C.-M. Lin, A.J. Steckl and T.P. Chow, "Rapid Thermal Annealing of FIB-Implanted Ga Shallow Impurity Profiles," Materials Res. Soc. Symposium, Boston, Massachusetts, December 1987. 130. A.J. Steckl, "Application of Focused Ion and Electron Beams to Novel Device Fabrication," Seminar, Hitachi Central Research Laboratory, Kokubunji, Tokyo, Japan, November 1987. 129. C.-M. Lin, A.J. Steckl and T.P. Chow, "Thin Layer p-n Junction Fabrication Using Ga and In Focused Ion Beam Implantation," Japan-USA Seminar on Focused Ion Beam Technology and Applications, Osaka, Japan, November 1987. 128. A.J. Steckl, "Focused Ion Beam and In-Situ Processing of Semiconductor Devices," Research Colloquium, Texas Instruments Central Research Laboratory, Dallas, Texas, October 1987. 127. A.J. Steckl, "Particle Beam Microfabrication of Novel Semiconductor Devices," Microelectronics Seminar, University of Texas, September 1987. 126. A.J. Steckl, "Focused Ion Beam Systems: Principles and Applications," Invited Paper, New England American Vacuum Society Meeting, Boston, Massachusetts, June 1987. 125. W.S. Pan and A.J. Steckl, "Selective Reactive Ion Etching of Tungsten Films in Fluorinated Gases," International Symposium Electron, Ion and Photon Beams, Los Angeles, California, May 1987. 124. A.J. Steckl and J.C. Corelli, "Focused Ion Beam Technology and Applications to In-Situ Processing," NATA Workshop on Emerging Technologies for In-Situ Processing, Corsica, May 1987. 123. J.F. McDonald, R. Rajapakse, J.C. Corelli and A.J. Steckl, "Optimized Focused Ion Beam Inspection and Repair of Wafer Scale Interconnections," SPIE Meeting, Santa Clara, California, March 1987. 122. W.-S. Pan and A.J. Steckl, "Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma," Materials Research Society Symposium on Science and Technology of Microfabrication, Boston, Massachusetts, December 1986. 121. R.H. Higuchi-Rusli, J.C. Corelli and A.J. Steckl, "Development of Test Bed System for High Melting Temperature Alloy Fabrication and Mass Spectroscopy of Liquid Metal Ion Beam Source," International Vacuum Congress, Baltimore, Maryland, October 1986. 120. A.J. Steckl, S.-D. Chu, C.-M. Lin and J.C. Corelli, "Graded-Base Bipolar Transistors Fabricated with Focused Ion Beam Technology," International Conference on Microlithography, Interlaken, Switzerland, September 1986. 119. A.J. Steckl, S. Balakrishnan, H.S. Jin and J.C. Corelli, "Micromachining of Polyimide Films with Focused Ion Beams," International Conference on Microlithography, Interlaken, Switzerland, September 1986. 118. J.C. Corelli, A.J. Steckl, D. Pulver and J.N. Randall, "Ultra Low Dose Effects in Ion-Beam Induced Grafting," Ion Beam Modification of Materials Conference, Catania, Italy, June 1986. 117. R.H. Higuchi, D.C. Cadien, J.C. Corelli and A.J. Steckl, "Development of Boron and Phosphorous Liquid Metal Ion Sources for the Focused Ion Beam System," 1986 Symposium on Electron, Ion and Photon Beams, Boston, Massachusetts, May 1986. 116. J.O. Choi, S.Y. Kim, J.A. Moore, J.C. Corelli and A.J. Steckl, "Enhanced Plasma-Etch Resistance of Acrylic Acid-Modified Poly (Methl Methacrylate)," 1986 Symposium on Electron, Ion and Photon Beams, Boston, Massachusetts, May 1986. 115. J.C. Corelli, A.J. Steckl, J.F. McDonald, V.J. Mifsud and J. Colling, "A Versatile Focused Ion Beam System with SIMS Capability," 1986 Symposium on Electron, Ion and Photon Beams, Boston, Massachusetts, May 1986. 114. A.J. Steckl, S.P. Murarka and J.C. Corelli, "In-Situ Processing of Semiconductor Devices and Integrated Circuits," Invited Paper, IEEE Custom Integrated Circuits Conference, Rochester, New York, May 1986. 113. A.J. Steckl, S.-D. Chu, C.-M. Lin and J.C. Corelli, "Device Characteristics of Focused Ion Beam Fabricated Graded-Base Bipolar Transistors," Bipolar Device Technology Research Conference, Tempe, Arizona, April 1986. 112. A.J. Steckl, J.F. McDonald, C.A. Neugebauer and R.O. Carlson, "Multi-Level Interconnections for Wafer Scale Integration," Invited Paper, International Conference Metallurgical Coatings, San Diego, California, April 1986. 111. A.J. Steckl, "Prospects for Particle Beam Processing of Integrated Circuits," International Symposium on Semiconductor Processing, San Jose, California, January 1986. 110. A.J. Steckl, "VLSI Research at the Center for Integrated Electronics," Seminar at Stanford University, Center for Integrated Systems, Stanford, California, August 1985. 109. A.J. Steckl, "Options and Issues for In-Situ Processing: An Overview," Invited Paper, SRC In-Situ Processing Workshop, Chapell Hill, North Carolina, June 1985. 108. M.E. Haslam, J.F. McDonald, D. King, M. Bourgeois and A.J. Steckl, "Transform Based Priority Corrections: Experimental Results and Comparisons," 1985 Symposium on Electron, Ion and Photon Beams, Portland, Oregon, May 1985. 107. S.-D. Chu, J.C. Corelli, A.J. Steckl. R.H. Reuss, W.M. Clark, D.B. Rensch and W.G. Morris, "Comparison of pnp Transistors Fabricated with Broad Beam and Spatial Profiling Using Focused Ion Beams," 1985 Symposium on Electron, Ion and Photon Beams, Portland, Oregon, May 1985. 106. S.-Y. Kim, J. Choi, D. Pulver, J.A. Moore, J.C. Corelli and A.J. Steckl, "Optimization of Solvent Development in PMMA Radiation-Induced Graft Lithography," 1985 Symposium on Electron, Ion and Photon Beams, Portland, Oregon, May 1985. 105. D.C. King, A.J. Steckl, J.L. Morgenstern, J.F. McDonald, M.A. Bourgeois, D.J. Yemc and I. Elminyawi, "The Flip-and-Shift Signal Enhancement Application for a Predictive E-Beam Pattern Registration Model," 1985 Symposium on Electron, Ion and Photon Beams, Portland, Oregon, May 1985. 104. J. Sugiura, W.-J. Lu, K.C. Cadien and A.J. Steckl, "Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases," 1985 Symposium on Electron, Ion and Photon Beams, Portland, Oregon, May 1985. 103. .W.-J. Lu, A.J. Steckl, T.P. Chow, "Completely Consumed Carbide (C3) - A New Process for Dielectric Isolation," Electrochemical Society International Symposium on VLSI Science and Technology, Toronto, Canada, May 1985. 102. A.J. Steckl, "Physico-Chemical Processes in Microelectronics Fabrication," Keynote Address, Gordon Conference on the Chemistry of Electronic Materials, Santa Barbara, California, February 1985 101. A.J. Steckl, "In-Situ Fabrication Technology for VLSI," American Vacuum Society Meeting, Reno, Nevada, December 1984. 100. R.M. Tarro, J.T. Warden, J.C. Corelli, J.A. Moore, A.J. Steckl and E. Galiano, "Electron Spin Resonance Studies of Irradiated PMMA," Microcircuit Engineering Conference, Berlin, Germany, September 1984. 99. A.J. Steckl, J.A. Moore and J.C. Corelli, "Image Enhancement in High Resolution Lithography through Polymer Grafting Techniques," 1984 Symposium on VLSI Technology, San Diego, California, September 1984. 98. J.A. Moore, J.C. Corelli, A.J. Steckl, J.T. Warden, R. Tarro, W.-T. Liu and J.N. Randall, "Resist Sensitivity Enhancement in Microlithography by In-Situ Polymerization," American Chemical Society Meeting, Philadelphia, Pennsylvania, August 1984. 97. A.J. Steckl, "Particle Beam Research at Rensselaer," Seminar at Kyoto University, Department of Electronics, Kyoto, Japan, June 1984. 96. A.J. Steckl, "VLSI Research at RPI," Seminar at Hitachi, Ltd., Central Research Laboratory, Kokubunji, Japan, June 1984. 95. A.J. Steckl, "Particle Beam Processing for Microfabrication," Invited Paper, Eighth Symposium on Ion Sources and Ion-Assisted Technology, Tokyo, Japan, June 1984. 94. J.L. Morgenstern, A.J. Steckl, D.C. King, M.A. Bourgeois and G.R. Redinbo, "Techniques for Improved Pattern Registration for E-Beam Lithography," 1984 Symposium on Electron, Ion and Photon Beams, Tarrytown, New York, May 1984. 93. M.E. Haslam, J.F. McDonald, A.J. Steckl and D.C. King, "Two-Dimensional Haar Transform Thinning for Fourier Proximity Corrected Electron-Beam Lithography," 1984 Symposium on Electron, Ion and Photon Beams, Tarrytown, New York, May 1984. 92. H. Hamadeh, J.C. Corelli and A.J. Steckl, "Focused Ga+ Beam Direct Implantation for Si Device Fabrication," 1984 International Symposium on Electron, Ion and Photon Beams, Tarrytown, New York, May 1984. 91. A.J. Steckl and T.P. Chow, "The Integration of Refractory Metal Silicides into VLSI Processing," Workshop on Refractory Metal Silicides, San Juan Bautista, California, May 1984. 90. T.L. Vogelsong, A.J. Steckl and J.J. Tiemann, "A Narrowband Charge Domain Bandpass Filter," Custom Integrated Circuits Conference, Rochester, New York, May 1984. 89. A.J. Steckl, "VLSI Research at RPI's Center for Integrated Electronics," Seminar at the Japanese Optoelectronics Joint Research Laboratory, Tokyo, Japan, April 1984. 88. A.J. Steckl and W.-J. Lu, "Oxidation of SiC Thin Films," Surface Science Workshop, Santa Barbara, California, April 1984. 87. A.J. Steckl, "Rensselaer's New Center for Industrial Innovation," Seminar at Xerox Corporation, Stanford, Connecticut, April 1984. 86. A.J. Steckl, "Center for Integrated Electronics: Multi-Disciplinary Microelectronics Research," Seminar at General Electric Corporate Research and Development Center, March 1984. 85. A.J. Steckl, "Advanced Beam Research at Renssalaer," Seminar at Cambridge University, Cambridge, England, March 1984. 84. T.P. Chow and A.J. Steckl, "A Review of Refractory Gates for MOS VLSI," Invited Paper, International Electron Devices Meeting, Washington, D.C., December 1983 83. J.C. Corelli, H. Hamadeh, R.-T. Huang and A.J. Steckl, "Focused Ion Beam Processes," SRC Topical Conference on Deposition Processes, Troy, New York, November 1983. 82. A.J. Steckl, "Multi-Disciplinary VLSI Activities at Rensselaer's Center for Integrated Electronics," Conference on Electron Device Activities in Western New York, Rochester, New York, October 1983. 81. A.J. Steckl, "Use of Advanced Beam Systems in VLSI," Invited Paper, Symposium on Interaction of Electrons, Ions and Photons with Solid Surfaces, Schenectady, New York, October 1983. 80. R. Pflueger, A.J. Steckl and J.C. Corelli, "Study of Defect States in Silicon by Photoionization Spectroscopy," Electrochemical Society Meeting, Washington, D.C., October 1983. 79. W.-T. Liu, M. Bourgeois, J.A. Moore, J.C. Corelli and A.J. Steckl, "PMMA Resist Sensitivity Amplification by E-Beam Induced Grafting of Acrylic Acid," Electrochemical Society Meeting, Washington, D.C., October 1983. 78. T.P. Chow, W.-J. Lu, A.J. Steckl and B.J. Baliga, "Thin Film Properties of Sputtered Niobium Silicide on SiO2 and n+ Poly-Si," Electrochemical Society Meeting, Washington, D.C., October 1983. 77. J.L. Morgenstern, A.J. Steckl, D.C. King, M.A. Bourgeois and G.R. Redinbo, "A First-Order Physical Model of Electron - Beam Scattering in E-Beam Lithography Registration," Electrochemical Society Meeting, Washington, D.C., October 1983. 76. D. Chow, J.F. McDonald, D. King, A.J. Steckl, "A Comparison of Haar and Walsh Transforms in E-Beam Proximity Correction Thinning," International Conference on Microlithography, Cambridge, England, September 1983. 75. A.J. Steckl, "New Directions in VLSI Research," Seminar at GTE Laboratories, Waltham, Massachusetts, August 1983. 74. A.J. Steckl, "Rensselaer's Center for Integrated Electronics," Seminar at Varian Associates, Glouster, Massachusetts, June 1983. 73. D. Chow, J.F. McDonald, A.J. Steckl, W. Smith, M. Harris and K. Molnar, "An Image Processing Approach to Efficient Proximity Correction for E-Beam Lithography," 1983 International Symposium on Electron, Ion and Photon Beams, Los Angeles, California, June 1983. 72. A.J. Steckl, "Advanced Beam Systems - Vehicle for Unified VLSI Research," Seminar at Semiconductor Research Corporation, Research Triangle Park, North Carolina, May 1983. 71. A.J. Steckl, "VLSI Research of Rensselaer," Seminar at Hughes Research Laboratories, Malibu, California, May 1983. 70. T.P. Chow and A.J. Steckl, "A Review of Plasma Etching of Refractory Metal Silicides," Electrochemical Society Meeting, San Francisco, California, May 1983. 69. W.-J. Lu, T.P. Chow, A.J. Steckl and W. Katz, "Thermal Oxidation of Sputtered Silicon Carbide Thin Films," Electrochemical Society Meeting, San Francisco, California, May 1982. 68. A.J. Steckl, "Refractory Metal Silicides for VLSI Applications," University of Connecticut Colloquium, Storrs, Connecticut, April 1983. 67. A.J. Steckl, "An Integrated Approach to IC Design, Simulation and Testing," Invited Paper, Fourth Brazilian Conference on Microelectronics, Campinas, Brazil, February 1983. 66. A.J. Steckl and T.P. Chow, "The Development of Refractory Metallization for High-Speed VLSI Circuits," Invited Paper, Fourth Brazilian Conference on Microelectronics, Campinas, Brazil, February 1983. 65. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "A High-Q Bandpass Filter Demonstrating Charge Domain Technology," International Electron Devices Meeting, San Francisco, California, December 1982. 64. S.S. Bencuya, A.J. Steckl and T.L. Vogelsong, "Coefficient Accuracy for CCD Packet Splitting Techniques," International Electron Device Meeting, San Francisco, California, December 1982. 63. J.C. Corelli, W. Vidinski and A.J. Steckl, "Correlation of Stress-Symmetry Experiments with Photoexcitation and Decay Processes for Infrared-Active Defect Absorption Bands in Silicon," Electrochemical Society Meeting, Detroit, Michigan, October 1982. 62. T.P. Chow and A.J. Steckl, "The Development of Refractory Gate Metallization for VLSI," Electrochemical Society Meeting, Detroit, Michigan, October 1982. 61. J.A. Moore, D. Follett, K. Weiss, A.J. Steckl and W.-T. Liu, "Polarity Reversal of PMMA E-Beam Resist by Treatment with Chlorosilanes," Electrochemical Society Meeting, Detroit, Michigan, October 1982. 60. T.P. Chow, K. Hamzeh and A.J. Steckl, "Thermal Oxidation of NbSi2 Thin Films," Electronics Materials Conference, Ft. Collins, Colorado, June 1982. 59. A.J. Steckl, "VLSI Research at RPI," University of Vermont Colloquium, Burlington, Vermont, May 1982. 58. A.J. Steckl, "An Integrated VLSI Program for Academic Research and Education," Digital Equipment Corporation Colloquium, Hudson, Maryland, May 1982. 57. A.J. Steckl, "VLSI Research at RPI," Motorola Seminar, Phoenix, Arizona, April 1982. 56. A.J. Steckl, S. Bencuya and T.L. Vogelsong, "Charge Domain Devices for Signal Processing," IEEE Communications Theory Workshop, Wickenburg, Arizona, April 1982. 55. A.J. Steckl, "The Center for Integrated Electronics at Rensselaer," Invited Paper, NSF Workshop on Microelectronics, Washington, D.C., April 1982. 54. W. Vidinski, J. Corelli and A.J. Steckl, "Photoexcitation of Infrared Active Defects Induced by Neutron Irradiation in Silicon," International Conference on Neutron Irradiation Effects, Argonne, Illinois, November 1981. 53. R. Ming and A.J. Steckl, "An Integrated Approach to IC Design and Simulation," Integrated Circuits Conference, Raleigh, North Carolina, October 1981. 52. A.J. Steckl, "The VLSI Program at Rensselaer," Invited Paper, Conference on the Impact of Microelectronics, Crotonville, New York, July 1981. 51. C. Rude, T.P. Chow and A.J. Steckl, "Characterization of NbSi2 Thin Films," Electronic Materials Conference, Santa Barbara, California, June 1981. 50. T.P. Chow, M. Ghezzo, A.J. Steckl and D.M. Brown, "Silicon Nitride Passivation for Short-Channel Molybdenum-Gate Devices," Electrochemical Society Meeting, Minneapolis, Minnesota, May 1981. 49. A.J. Steckl, J. McDonald and R.J. Gutmann, "VLSI Design Automation and Interactive Modeling for Electron Beam Lithography," Custom Integrated Circuits Conference, Rochester, New York, May 1981. 48. A.J. Steckl, "VLSI Activities at RPI," Seminar presented at Department of Computer Science, SUNY-Albany, April 1981. 47. T.P. Chow and A.J. Steckl, "Planar Plasma Etching of Mo and MoSi2 Using NF3," International Electron Device Meeting, Washington, D.C., December 1980. 46. G.E. Smith and A.J. Steckl, "Two-Dimensional Integrated Circuit Process Modeling Program - RECIPE," International Electron Device Meeting, Washington, D.C., December, 1980. 45. B. Zetterland and A.J. Steckl, "Low Temperature Recombination Lifetime in Si MOSFET's," International Electron Device Meeting, Washington, D.C., December 1980. 44. T.P. Chow, A.J. Steckl and D.M. Brown, "Formation of Intermediate Silicide Phases in Silicidized Molybdenum," Electrochemical Society Meeting, Hollywood, Florida, October 1980. 43. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain Analog Sampled Data Filters," Electronic and Aerospace Systems Conference, Arlington, Virginia, September 29, 1980. 42. T.P. Chow, D.M. Brown, A.J. Steckl and M. Garfinkel, "Silane Silicidation of Mo Films," Electronic Materials Conference, Ithaca, New York, June 1980. 41. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Fundamentals and Operation of Charge Domain Filters," Device Research Conference, Ithaca, New York, June 1980. 40. D.M. Brown, T.P. Chow and A.J. Steckl, "A Review of Refractory Metal IC Technology - Past and Present," Invited Paper, 1980 Custom Integrated Circuits Conference, Rochester, New York, May 1980. 39. T.P. Chow and A.J. Steckl, "Plasma Etching Characteristics of Sputtered MoSi2 Films," Electrochemical Society Meeting, St. Louis, Missouri, May 1980. 38. A.J. Steckl, "The PbS-Si Heterojunction - A State-of-Art Review," Invited Paper, SPIE Symposium, Washington, D.C., April 1980. 37. A.J. Steckl and K.Y. Tam, "Bias and Temperature Dependence of 1/f Noise and Dark Current in the Pbs-Si Heterojunction," Second International Conference on 1/f Noise, Orlando, Florida, March 1980. 36. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain Recursive Filters," 1980 IEEE International Solid-State Circuits Conference, San Francisco, California, February 1980. 35. T.P. Chow and A.J. Steckl, "MoSi2 Gate MOSFET's for VLSI," International Electron Devices Meeting, Washington, D.C., December 1979. 34. A.J. Steckl, K.Y. Tam and M.E. Motamedi, "Read-Out Characteristics of the PbS-Si HJ Detector," International Electron Devices Meeting, Washington, D.C., December 1979. 33. A.J. Steckl and G. Mohammed, "The Effect of Ambient Atmosphere in the Annealing of the Indium Tin Oxide Films," Conference on Glass Science, Troy, New York, August 1979. 32. H. Elabd and A.J. Steckl, "Auger Depth Profiling of Interfaces in the PbS-Si Heterojunction," Electronic Materials Conference, Boulder, Colorado, June 1979. 31. A.J. Steckl and M.E. Motamedi, "Study of the Low Temperature Properties of Charge Coupled Devices," Microelectronics Symposium, Lubbock, Texas, May 1979. 30. H. Elabd, A.J. Steckl and W. Vidinski, "Effect of Substrate Orientation on the Properties of the PbS-Si Heterojunction," Photovoltaic Material and Device Workshop, Arlington, Virginia, June 1979. 29. M.E. Motamedi, K.Y. Tam and A.J. Steckl, "Custom Design CMOS for Infrared Signal Read-Out," Custom Integrated Circuits Conference, Rochester, New York, May 1979. 28. S.P. Sheu and A.J. Steckl, "Frequency Characteristics of the p-n PbS-Si Heterojunction Detector," Second International Infrared Physics Conference, Zurich, Switzerland, March 1979. 27. A.J. Steckl, "The PbS-Si Heterojunction: Focal Plane Applications," Seminar given at the Honeywell Electro-optics Center, Lexington, Maryland, January 1979. 26. A.J. Steckl, M.E. Motamedi, S.P. Sheu, H. Elabd and K.Y. Tam, "The PbS-Si Heterojunction: A New Approach to Infrared Focal Plane Array Integration," 1978 International Conference on the Application of Charge Coupled Devices, San Diego, California, October 1978. 25. A.J. Steckl, M.E. Motamedi and S.P. Sheu, "Current Mode Operation of the p-n PbS-Si Heterojunction Detector," IRIS Detector Meeting, Annapolis, Maryland, June 1978. 24. A.J. Steckl, H. Elabd and T. Jakobus, "PbS-Si Anisotype Heterojunction Characteristics," International Electron Devices Meeting, Washington, D.C., December 1977. 23. H. Elabd and A.J. Steckl, "Growth of Polycrystalline PbS Films," 24th Annual National Vacuum Symposium, Boston, Massachusetts, November 1977. 22. A.J. Steckl, "IRCCD Imaging Sensors: A Review of Device Options," AGARD Symposium on Impact of CCD and SAW on Signal Processing and Imaging, Ottawa, Canada, October 1977. 21. A.J. Steckl, "p-p PbS-Si Isotype Heterojunction Device Characteristics," European Solid State Device Research Conference, Brighton, England, September 1977. 20. A.J. Steckl, "Low Temperature Signal Linearity and Harmonic Distortion in Charge Coupled Devices," Third European Solid State Circuits Conference, Ulm, Germany, September 1977. 19. A.J. Steckl, "IRCCD Focal Plane Arrays: State-of-Art," Colloquium presented at Martin Marietta Laboratories, Baltimore, Maryland, May 1977. 18. A.J. Steckl, "IR Detector Properties of the PbS-Si Heterojunction," IRIS Detector Meeting, Colorado Springs, Colorado, March 1977. 17. A.J. Steckl, "Annealing Effects on the Spectral Characteristics of In2-xSnxO3-y," Meeting on Optical Phenomena in Infrared Materials, Annapolis, Maryland, December 1976. 16. A.J. Steckl, "IRCCD Device Options and Technologies," Seminar given at Xerox Palo Alto Research Center, Palo Alto, California, June 1976. 15. R.D. Nelson, A.J. Steckl, R.D. Williams, B.R. Nagel and J.K. Lennard, "Extrinsic Silicon CCD-Detector Technology," IRIS Detector Meeting, San Diego, California, March 1976. 14. A.J. Steckl, "Infrared Charge Coupled Devices," Lecture given at the Solid State Seminar, University of California, Irvine, California, February 1976. 13. A.J. Steckl, "Application of CCDs in Infrared Imaging Systems," Seminar given at Texas Instruments Corporate Research Laboratory, Dallas, Texas, December 1976. 12. A.J. Steckl, "Low Temperature Silicon CCD Operation," International Conference on CCD Applications, San Diego, California, October 1975. 11. A.J. Steckl, "Injection Efficiency in Monolithic and Hybrid IRCCD's," International Conference on CCD Applications, San Diego, California, October 1975. 10. A.J. Steckl, "Infrared Optical Properties of Sputtered In2-xSnxO3-y, International Conference on Infrared Physics, Zurich, Switzerland, August 1975. 9. A.J. Steckl, "Infrared Charge Coupled Devices," Invited Plenary Address, International Conference on Infrared Physics, Zurich, Switzerland, August 1975. 8. A.J. Steckl, "New Concepts in IRCCD's," Seminar given at Royal Radar Establishment, Malvern, Great Britain, October 1974. 7. A.J. Steckl, R. Nelson, B.T. French, R.A. Gudmundsen and D. Schechter, "Application of CCD's to Infrared Detection and Imaging," International Conference on CCD Technology and Applications, Edinburgh, Great Britain, September 1974. 6. A.J. Steckl and T. Koehler, "Theoretical Analysis of Directly Coupled 8-12um Hybrid IRCCD's," CCD Applications Conference, San Diego, California, September 1973. 5. A.J. Steckl and P. Das, "A Model of the Acoustoelectric Oscillator," Ultrasonics Symposium, Boston, Massachusetts, October 1972. 4. M.E. Arellano, P. Das and A.J. Steckl, "Acoustoelectric Current Steps in Optically Polished Parallel CdS," Ultrasonics Symposium, Boston, Massachusetts, October 1972. 3. A.J. Steckl and P. Das, "Frequency Modulation of the CdS Acoustoelectric Oscillator," American Phys. Soc. Meeting, Atlantic City, New Jersey, March 1972. 2. A.J. Steckl and P. Das, "Interaction of Light and Ultrasound in the Acoustoelectric Oscillator," American Phys. Soc. Meeting, Cleveland, Ohio, March 1972. 1. P. Das and A.J.
Steckl, "Current Oscillations in Optically Polished and Parallel Plates
of CdS," American Phys. Soc. Meeting, Dallas, Texas, March 1970.
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