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B. Papers
305. J. C. Heikenfeld and A. J.
Steckl, “Black and Blue: The Impact
of Pigmented Thick Dielectrics for
Superior
Contrast Inorganic EL Displays”,
Proc. SID Int’l. Display Workshop, pp. 1113-1116, (Fukuoka, Japan) Dec.
2003
304. U. Hommerich,
Ei Ei Nyen, D. S. Lee, A. J. Steckl, and J. M. Zavada,
“Photoluminescence Properties of In-Situ Tm-Doped AlGaN”, Appl. Phys.
Lett. Vol. 83 (22), pp. 4556-4558, Dec. 2003
303. U. Hömmerich, E. E. Nyein, D. S. Lee, J.
Heikenfeld, A. J. Steckl, J. M. Zavada, "Photoluminescence
studies of rare earth (Er, Eu, Tm) in situ doped GaN", Materials
Science and Engineering B105, pp.91-96, 2003.
302. C. Munasinghe, J.
Heikenfeld, R. Dory, R. Whatmore, J. Bender, J. Wager,
and A. J. Steckl, “High Brightness ZnS and GaN Electroluminescent
Devices Using PZT Thick Dielectric Layers”, IEEE Trans. Electron Devices
(submitted).
301. F. Pelle, F. Auzel, J. M. Zavada, D. S. Lee,
A. J. Steckl, "New Spectroscopic Data of
Erbium Ions in GaN Thin Films," Materials Science and Engineering
B105, pp.126-131, 2003.
300. J. Heikenfeld, A. J. Steckl, "Inorganic
EL Display at the Crossroads," Information Display, pp. 20-15, Dec.
2003.
299. J. C.
Heikenfeld and A. J. Steckl, “Performance
Characteristics of Black Dielectric EL Displays for Broad Vehicular
Usage”, Proc. SID Vehicular Display Symp., Oct. 2003.
298. C. C. Baker,
J. C. Heikenfeld, and A. J. Steckl, “Optical Amplification at 1.5 µm in
Zn2Si0.5Ge0.5O4:Er Thin Film
Channel Waveguides on Oxidized Silicon”, IEEE Photonics Tech. Lett.
(submitted).
297. D. S. Lee
and A. J. Steckl, "Enhanced Blue Emission
From Tm-doped AlxGa1-xN Electroluminescent Thin
Films", Appl. Phys. Lett. Vol.83(11), pp.2094-2096, 15 Sept. 2003.
296. J. Heikenfeld, R. A. Jones, and A. J.
Steckl, “Black Dielectric
Electroluminescent 160´80
Pixel Display”, Soc. Info. Display, Vol. 35-2, pp. 1110-1113, May
2003.
295. F. Pelle, F.
Auzel, J. M. Zavada, D. S. Lee and A. J. Steckl, “New Spectroscopic Data
of Erbium Ions in GaN Thin Films”, Electrochem. Soc. Proc. Vol.
2003-04: pp. 235-257, April 2003.
294. F. Pelle, F.
Auzel, J. M. Zavada, D. S. Lee, and A. J. Steckl, “Fluorescence Dynamics
of Er3+ Ions in MBE-Grown GaN Thin Films”, NATO Science
Series Vol: Physics of Laser Crystals, 2003.
293. E.E. Nyein, U. Hömmerich, J. Heikenfeld, D.S.
Lee, A.J. Steckl, J.M. Zavada, "Spectral and
time-resolved photoluminescence studies of Eu-doped GaN," Appl.
Phys. Lett. Vol.82(11), pp.1655-1657, 17 March 2003.
292. R. Jones, J. C. Heikenfeld and A. J. Steckl,
“Rare Earth Doped GaN Black Dielectric Electroluminescent Technology for
Full-Color, High-Contrast Display Applications,” Proc. SID Vehicular
Display 2002 Symp. 291. J. C. Heikenfeld, R. Jones and A. J. Steckl,
“Matrix Addressed Black Dielectric Electroluminescent Displays for
Automotive Use,” Proc. SID Vehicular Display 2002 Symp. 290. A. J.
Steckl, J. C. Heikenfeld, D. S. Lee, Y.
Q. Wang, and R. Jones, “Rare-earth-doped GaN Phosphors: Growth,
Properties and Fabrication of Electroluminescent Devices,” Proc.
Electroluminescence 2002, Ghent, Belgium, Sept. 2002. 289. D. S. Lee and A. J.
Steckl, "Selective
Enhancement of
Blue Electroluminescence from GaN:Tm," Appl. Phys. Lett.
Vol. 82(1), pp. 55-57, 06 Jan. 2003. 288. D. S. Lee and A. J.
Steckl, “Enhanced Blue and
Green Emission in Rare-Earth-Doped GaN Electroluminescent Devices by
Optical Photopumping,” Appl. Phys. Lett. Vol. 81 (13), pp.
2331-2333, 23 Sept. 2002. 287. J. Zavada, U. Hommerich, and A. J.
Steckl,
“Excitation mechanisms of rare earth ions embedded in GaN thin films,”
Electrochem. Soc. Meeting Proc. Vol. 2002-3, May 2002. 286. J. C. Heikenfeld and A. J.
Steckl, “High
Contrast Thick Dielectric GaN Electroluminescent Displays on Glass
Substrates,” 2002 Soc. Information Displays Int’l. Symp. Digest, Vol. 33
(1), pp. 96-99, May 2002. 285. J. Cheng and A. J. Steckl, “Focused Ion Beam
Fabricated Microgratings for Integrated Optics Applications,” IEEE J.
Selected Topics in Quantum Electronics, Vol. 8 (6), Nov/Dec.
2002.
284. A. J. Steckl, J. C. Heikenfeld, D. S. Lee, M.
Garter, C. C. Baker, Y. Q. Wang, and R. Jones, Invited Paper,
“Rare-earth-doped GaN: Growth, Properties and Fabrication of
Electroluminescent Devices,” IEEE J. Selected Topics in Quantum
Electronics, Vol. 8 (4), pp.749-766, July/Aug. 2002.
283. Y. Wang and A. J. Steckl, "Three-color
Integration on Rare-earth Doped GaN Electroluminescent thin Films,"
Appl. Phys. Lett. Vol. 82(3), 20 Jan. 2003. 282. M. Pan and A. J.
Steckl, "Red
Emission from Eu-doped GaN Luminescent Films Grown
by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett.
Vol. 83 (1), pp. 9-11, 7 July 2003
281. C. C. Baker, J. C. Heikenfeld, and A. J. Steckl, “Photoluminescent and Electroluminescent Zn2Si0.5Ge0.5O4:Mn
Thin Films for Integrated Optic Systems,” IEEE J. Selected Topics in
Quantum Electronics, IEEE J. Selected Topics in Quantum Electronics,
Vol. 8 (6), Nov/Dec. 2002.
280. P. Rack, J. Heikenfeld, and A. J. Steckl,
"Inorganic Electroluminescent Displays," Chapter in Handbook of
Luminescence and Display Materials and Devices, H.S. Nalwa, ed.,
American Scientific Publ. (CA), 2003
279. D. S. Lee and A. J. Steckl, “Lateral Color Integration on
Rare-Earth-Doped GaN Electroluminescent Thin Films,” Appl. Phys.
Lett.
Vol. 80, pp. 1888-1890, Mar. 18, 2002.
278. A. J. Steckl, J. Heikenfeld and D. S. Lee,
“Rare-Earth-Doped GaN Phosphors for Electroluminescent Displays,” Proc.
Int’l. Conf.Sci. Tech. Emissive Displays, pp.95-98, Nov. 2001.
277. L. Cheng, M. Pan, J. D. Scofield, A. J. Steckl,
“Growth and Doping of SiC Thin Films on Low-Stress, Amorphous Si3N4/Si
Substrate for Robust MEMS Applications,” J. Electronic Materials, Vol.
31, No.5, pp. 361-365, May 2002.
276. J. Heikenfeld and A. J. Steckl, “Low Cost
Display Technology Utilizing Thick Dielectric Electroluminescent Devices
on Glass Substrates,” Proc. SID Symp. Vehicle Displays, ISBN #
0966030761, pp. 12-15, Oct. 2001.
275. J. T. Seo, U. Hommerich, D.C. Lee, J. Heikenfeld, A. J. Steckl and J.
M. Zavada, “Thermal Quenching of Photoluminescence from
Er-doped GaN
Thin Films,” J. Alloys & Compounds, Vol. 341, pp. 62-66, July 2002.
274. D. S. Lee and A. J. Steckl, “Ga Flux Dependence of
Er-Doped GaN
Luminescent Thin Films,” Appl. Phys. Lett. Vol. 80, pp. 728-730,
Feb. 4, 2002. 273. D.
S. Lee and A. J. Steckl, “Growth-Temperature Dependence of
Er-Doped
GaN Luminescent Thin Films,” Appl. Phys. Lett. Vol. 80,
pp. 344-346, Jan. 21, 2002. 272. J. Heikenfeld and A. J. Steckl, “Contrast Enhancement in Black
Dielectric Electroluminescent Devices,” IEEE Trans. Electr. Dev. Vol.
49, No. 8, pp. 1348-1352, Aug. 2002. 271. D.
S. Lee and A. J. Steckl, “Room-Temperature-Grown Rare-Earth-Doped GaN
Luminescent Thin Films,” Appl. Phys. Lett. Vol. 79, pp.
1962-1964, Sept. 24, 2001. 270. I. Chyr and A. J. Steckl, “GaN Focused Ion Beam Micromachining
with Gas-Assisted Etching,” J. Vac. Sci. Tec., Vol. 19 (6), pp.
2547-2550, Nov. 2001.
269. J. Cheng and A. J. Steckl, “Mg-Ga Liquid Metal Ion Source for
Implantation-Doping of GaN,” J. Vac. Sci. Tec., Vol. 19 (6),
pp.2551-2554, Nov. 2001. 268. R. C. J. Chi and A. J. Steckl, "Principles, Fabrication, and
Detection Methods for the Digital Thin-Film Color Optical Memory
Device," Applied Optics 267. M. Garter and A. J. Steckl, “Temperature Behaviour of Visible
and Infrared Electroluminescent Devices Fabricated on Er-doped GaN,”
IEEE Trans. Electr. Dev. Vol. 49 (1), pp. 48-54, Jan. 2002. 266.
D. S. Lee, J. Heikenfeld, A. J. Steckl, U. Hommerich, J. T. Seo, A.
Braud, and J. M. Zavada, “Optimum Er Concentration for
In-Situ Doped GaN Visible and Infrared Luminescence,” Appl. Phys.
Lett. Vol. 79, pp. 719-721, Aug. 6, 2001. 265. B. K. Lee, C. J. Chi, I.
Chyr, D. S. Lee, F. J. Beyette, and A.
J. Steckl, “In-situ Er-doped GaN Optical Memory Devices Using High
Resolution Focused Ion Beam Milling,” Optical Engineering Lett. Vol. 41,
No. 4, pp. 742-743, April 2002. 264. J. Heikenfeld and A. J. Steckl, "Electroluminescent Devices on
Glass Using a High Temperature Stable GaN-based Phosphor and Thick Film
Dielectric," IEEE Trans. Electr. Dev., Vol. 49(4), pp. 557-563, April
2002. 263. A. M. Mitofsky, G. C. Pappen, S. G. Bishop, D. S. Lee and A. J.
Steckl, “Comparison of Er3+ Photoluminescence and Photoluminescence
Excitation Spectroscopy in In-situ-doped GaN:Er,” Proc. 2000 MRS GaN
Symp. Vol. 639, pp. G10.26.1-6, Oct. 2001. 262. J. Heikenfeld and A. J. Steckl, “AC
Operation of GaN:Er Thin Film Electroluminescent Display Devices,”
Mat. Res. Soc. Symp., Vol.
639, pp. G10.4.1-6, Oct. 2001.
261. C. J. Chi and A. J. Steckl, “Digital
Thin Film Color Optical Memory,” Appl. Phys. Lett. Vol. 78,
pp. 255-257, Jan.8, 2001. 260. B. K. Lee, C. J. Chi, L. C. Chao, J. Cheng, I.
Chyr, F. J. Beyette, and A. J. Steckl, “High Density
Er-implanted GaN Optical Memory
Devices,” Applied Optics, Vol. 40, pp. 3552-3558, July 20, 2001. 259. J. Heikenfeld and
A.J. Steckl, "Alternating Current Thin Film
Electroluminescence of GaN:Er," Appl. phys. Lett., Vol. 77,
pp.3520-3522, Nov. 2000. 258. J. Heikenfeld and A. J. Steckl, “Rare-Earth-Doped GaN Switchable
Color Electroluminescent Devices,” IEEE Trans. Electr. Dev.
Vol. 49, pp. 1545-1551, Sept. 2002 257. A.J. Steckl, J.
Heikenfeld, D.S. Lee and M. Garter, "Multiple
Color Capability from Rare Earth Doped Gallium Nitride,"
Materials Science & Eng. B, Vol. 81/1-3, pp. 97-101, May
2001. 256. U. Hommerich, J.T. Seo, C.R. Abernathy, A.J. Steckl and J.M.
Zavada, "Spectroscopic Studies of the Visible and Infrared
Luminescence form Er-doped GaN," Materials Science & Eng.
B, Vol. 81/1-3, pp. 116-120, May 2001. 255. L. C. Chao and A. J.
Steckl, “Annealing-Activated Site
Transition of Upconversion from Er-doped GaN,”
Appl. Phys. Lett. 254. R. Sivaraman, S.J. Clarson, B.K. Lee,
A.J. Steckl, B.A. Reinhardt,
"Photoluminescence Studies and Read/Write Process of a Strong
Two-Photon Absorption Chromophore," Appl. Phys. Lett., Vol. 77,
pp.328-330, July 2000. 253. A.J. Steckl, F. Beyette, J.T. Boyd,
S.J. Clarson, H.E. Jackson,
S.T. Kowell, "Selected Topics in Photonics/Optoelectronics
Research at the University of cincinnati," IEEE LEOS
Newsletter, Vol. 14 (1), pp. 3-9, Feb. 2000. 252. J. Tang, B.
Sheshadri, K.N. Naughton, B.K. Lee, R.C. Chi, A.J.
Steckl and F.R. Beyette, "CMOS Based Photoreceiver Arrays for
Page-Oriented Optical Storage Access," IEEE Photonics Tech.
Lett., Vol. 12 (9), pp. 1234-1236, Sept. 2000. 251. A.J. Steckl, J.
Heikenfeld, M. Garter, R. Birkhahn and D.S. Lee,
"Rare Earth Doped Gallium Nitride - Light Emission From
Ultraviolet to Infrared," Compound Semiconductor, Vol. 6
(1), pp.48-52, Feb./March 2000. 250. P.H. Citrin, P.A. Northrup, R. Birkhahn and
A.J. Steckl,
"Local Structure and Bonding of Er in GaN: A Contrast with Er in Si,"
Appl. Phys. Lett., Vol. 76, pp.2865-2867, May 15, 2000. 249. J.
Heikenfeld, D.S. Lee, M. Garter, R. Birkhahn and A.J. Steckl,
"Low Voltage GaN:Er Electroluminescent Devices,"
Appl.
Phys. Lett., Vol. 76 (11), pp. 1365-1367, March 2000. 248. U.
Hommerich, J.T. Seo, J.D. MacKenzie, C.R. Abernathy, R. Birkhahn, A.J. Steckl and
J.M. Zavada, "Comparison of the
Optical properties of Er-doped GaN Prepared by Metalorganic and
Solid Source MBE," MRS Internet J. Nitride Semicond. Res., Vol.
5S1, W11.65, 2000. 247. J. Chen, A.J. Steckl, J. D. Scofield, "Formation of SiC SOI
Structures by Direct Growth on Insulating Layers," J. Electrochem. Soc., Vol. 147 (10), pp. 3845-3849, Oct. 2000. 246. D.S. Lee, J.
Heikenfeld, R. Birkhahn, M. Garter, and A.J. Steckl,
"Voltage-controlled yellow or orange emission from GaN codoped
with Er and Eu," Appl. Phys. Lett., Vol. 76 (12),
pp.1525-1527, March 2000. 245. J. Chen, A. J. Steckl, M. J.
Loboda, "Growth and
Characterization of N-Doped SiC Films from Trimethylsilane,"
Proc. Int’l. Conf. SiC and Related Materials, Material Science
Forum, Vol. 338-342, pp.273-276, 2000. 244. L.C. Chao and A. J.
Steckl, "CW
Blue-Green Light Emission from GaN and SiC by Sum-Frequency Generation
and Second Harmonic Generation," J. Electr. Mat., Vol. 29,
pp.1059-1062, Sept. 2000. 243. I. Chyr, B. K. Lee, L.C. Chao, and A. J.
Steckl, "Damage
Generation and Removal in the Ga+ FIB Micromachining of
GaN for Photonic Applications," J. Vac. Sci. Technol. B, Vol.
17 (6), pp. 3063-3067, Nov/Dec 1999. 242. L.C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I.
Chyr, and A. J. Steckl, "Rare Earth FIB Implantation Utilizing Er and Pr Liquid
Alloy Ion Sources," J. Vac. Sci. Technol. B, Vol. 17 (6),
pp. 2791-2794, Nov/Dec 1999. 241. J. Zavada, U. Hommerich, and A. J.
Steckl, “Light Emission from Rare Earth
Doped GaN,” Chapter 9 in III-V Nitride Semiconductors: Optical
Properties I, H. Jiang and M. O. Manasreh, Eds., Optical
Properties of Semiconductors and Superlattices, Vol. 13, pp.
379-409, Taylor and Francis Publishers, 2002. 240. A. J. Steckl and J. M.
Zavada, "Photonic Applications of
Rare-Earth-Doped Materials," Mat. Res. Soc. Bulletin, Vol.24,
No.9, pp. 16-17, September 1999. 239. L.C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I.
Chyr, and A. J. Steckl, "Upconversion Luminescence of Er-Implanted GaN Films by
FIB-Direct Write," Appl. Phys. Lett., Vol. 75, pp.
1833-1835, Sept. 27, 1999. 238. J. Heikenfeld, M. Garter, D. S. Lee, , R.
Birkhahn, and A. J. Steckl, "Red Light Emission by Photoluminescence and
Electroluminescence from Eu-doped GaN," Appl. Phys. Lett., Vol.
75, pp. 1189-1191, Aug. 30, 1999. 237. A. J. Steckl and J. M.
Zavada, "Optoelectronic Properties and
Applications of Rare-Earth-Doped GaN," Mat. Res. Soc. Bulletin,
Vol.24, No.9, pp.33-38, September 1999. 236. A. J. Steckl, M. Garter, D. S. Lee, J.
Heikenfeld, and R. Birkhahn,
"Blue Electroluminescence from Tm-doped GaN Light Emitting
Devices," Appl. Phys. Lett., Vol. 75, Oct. 11, 1999. 235. F. J. Pacheco, A. M. Sanchez, S. I. Molina, D. Araujo, R. Garcia,
and A. J. Steckl, "Effect of Temperature Ramp Rate During
Carbonization of Si (111) on the obtained SiC Crystalline
Quality", Proc. Microscopy of Semicond. Materials XI Congress
(Oxford, England), March 1999. 234. K. Lorenz, R. Vianden, R.
Birkhahn, A. J. Steckl, M. F. da Silva,
J. C. Soares, and E. Alves, "RBS/Channeling Study of Er-Doped
GaN Films Grown by MBE on (111) Si Substrates," Nucl. Instr.
& Methods B, Vol. 161/163, pp.946-951, March 2000. 233. J. Chen, A. J.
Steckl, and M. J. Loboda, "In-Situ N2
Doping of SiC films Grown on Si(111) by Chemical Vapor Deposition
from Organosilanes," J. Electrochem. Soc., Vol. 147(6),
pp.2324-2327, June 2000. 232. L.C. Chao and A.J. Steckl, "Room Temperature and Infrared
Photoluminescence from Pr-Implanted GaN films by Focused Ion Beam
Direct Write," Appl. Phys. Lett. Vol. 74, pp. 2364-2366,
Apr. 19, 1999. 231. M. Garter, R. Birkhahn, A.J. Steckl and J.D.
Scofield,
"Visible and Infrared Rare-Earth Activated Electroluminescence
from Erbium–doped GaN," MRS Internet J. Nitride Semicond.
Res. 4S1, G11.3, 1999. 230. Chyr and A.J. Steckl, "Focused Ion Beam Micromachining of GaN
Photonic Devices," MRS Internet J. Nitride Semicond. Res. 4S1,
G10.7, 1999. 229. R.H. Birkhahn, R. Hudgins, D.S. Lee, A.J. Steckl, A.
Saleh, R.G.
Wilson and J.M. Zavada, "Optical and Structural Properties of
Er3+ - Doped GaN Growth by MBE," MRS Internet J.
Nitride Semicond. Res. 4S1, G3.80, 1999. 228. R.H. Birkhahn,
R.A. Hudgins, D.S. Lee, A.J. Steckl, R.J. Molnar
and J. M. Zavada, "Growth and Morphology of Er-doped GaN on
Sapphire and HVPE Substrates," J. Vac. Sci. Technol.B, Vol. 17,
pp. 1195-1199, May/Jun 1999. 227. L.C. Chao and A.J. Steckl, "Development of an Er-Ni Liquid
Metal Ion Source," J. Vac. Sci. Technol. B Vol. 17, pp.
1056-1058, May 1999. 226. R.H. Birkhahn, M.J. Garter and A.J.
Steckl, "Red Light
Emission by Photoluminescence and Electroluminescence from Pr-doped GaN on Si Substrates,"
Appl. Phys. Lett. Vol. 74, pp.
2161-2163, Apr. 12, 1999. 225. F.J. Pacheco, A.M. Sanchez, S.I. Molina, D.
Araujo, J. Devrajan, A.J. Steckl and R. Garcia, "Electron Microscopy Study of SiC
Obtained by Carbonization of Si (111)," Thin Solid Films, Vol. 343-344,
pp. 305-308, 1999. 224. M.J. Garter, J.D. Scofield, R.H. Birkhahn and
A.J. Steckl,
"Visible and infrared
rare-earth-activated electroluminescence from indium tin oxide Schottky
diodes to GaN:Er on Si," Appl. Phys. Lett. Vol. 74, pp. 182-184, Jan.
1999. 223. R.H. Birkhahn and A.J. Steckl, "Green Emission from Er-doped
GaN Grown by Molecular Beam Epitaxy on Si Substrates," Appl.
Phys. Lett., Vol. 73, pp. 2143-2145, Oct. 1998. 222. A.J.
Steckl, M.J. Garter, R.H. Birkhahn and J. Scofield,
"Green Electroluminescence from Er-doped GaN Schottky Barrier
Diodes," Appl. Phys. Lett., Vol. 73, pp. 2450-2452, Oct.
1998. 221. A.J. Steckl and I. Chyr, "Focused Ion Beam Micromiling of GaN,"
J. Vac. Sci. and Technol. B, Vol. 17, pp. 362-365,
March/April 1999. 220. A.J. Steckl and R.H. Birkhahn, "Visible Emission from Er-doped
GaN Grown by Solid Source Molecular Beam Epitaxy," Appl. Phys.
Lett., Vol. 73, pp. 1700-1702, Sept. 1998. 219. V. Saxena, J.N. Su, and
A.J. Steckl, "High Voltage Ni-SiC
Schottky Diodes Utilizing Metal Field Plate Termination," IEEE
Transactions on Electron Devices, Vol. 146, pp. 456-464,
March 1999. 218. B. Lee, A.J. Steckl, J.M. Zavada and R.G. Wilson, "The Effect
of Hydrogen/Deuterium Introduction in Photoluminescence of 3C-SiC
Crystals," Materials Res. Soc. Proc., May 1998. 217. S.
Madapura, A.J. Steckl and M.J. Loboda, "High Growth Rate
of Silicon Carbide on Silicon (111) Substrates by Chemical Vapor
Deposition Using Trimethylsilane," Proc. 8th
Int’l. Symp. on Si Matls. Sci. and Tech., H.R. Huff, H. Tsuya and
U. Gösele, eds., Electrochemical Society Meeting, PV98-1,
pp. 1433-1445, San Diego, CA, May 1998. 216. S. Madapura, A.J. Steckl and
M.J. Loboda, "Heteroepitaxial
Growth of SiC (100) and (111) by CVD using Trimethylsilane," J.
Electrochemical Society, Vol. 146, pp. 1197-1202, March 1999. 215. J. Chen,
A.J. Steckl and M.J. Loboda, "MBE Growth of SiC on
Si (111) with SCB," J. Vacuum Science and Technology B, Vol. 16,
pp. 1305-1308 (May/June 1998). 214. V. Saxena and A.J. Steckl, "Building Blocks for SiC Devices:
Ohmic Contacts, Schottky Contacts and p-n Junctions," Chapter 3
in Silicon Carbide Materials and Devices, Y.S. Park, Ed.,
Vol. 52 in Semiconductors and Semimetals, R.K. Willardson and
E.R.
Weber, eds., Academic Press, May 1998. 213. V. Saxena, A.J. Steckl, "High Temperature Operation of 4H and
6H SiC High Voltage Schottky Diodes," Invited Paper,
Proc. Int’l. Semiconductor Device Research Symposium, pp. 539-542,
Charlottesville, VA, Dec. 1997. 212. J. Chen, A.J. Steckl, and M.J.
Loboda, "Heteroepitaxial
Growth of SiC on Si by Gas Source MBE with Silacyclobutane,"
Proc. Silicon Carbide, III-Nitrides and Related Materials,
Stockholm, Material Science Forum, Vol. 264-268, pp. 239-242,
1998.
211. V. Saxena, A.J. Steckl, "High Voltage 4H SiC Rectifiers Using
Pt and Ni Metallization," Proc. Silicon Carbide, III-Nitrides
and Related Materials, Stockholm, Material Science Forum, Vol.
264-268, pp. 937-940, 1998
210. V. Saxena, A.J. Steckl, "Fast and Anisotropic Reactive Ion
Etching of 4H and 6H SiC in NF3," Proc. Silicon
Carbide, III-Nitrides and Related Materials, Stockholm, Material
Science Forum, Vol. 264-268, pp. 829-832, 1998
209. J. Devrajan, A.J. Steckl, C. Tran, and R.A. Stall, "Optical
Properties of GaN Films Grown on SiC/Si," Proc. Silicon
Carbide, III-Nitrides and Related Materials, Stockholm, Material
Science Forum, Vol. 264-268, pp. 1149-1152, 1998.
208. P.H.Yih, V. Saxena, and A.J. Steckl, "A Review of SiC
Reactive Ion Etching in Fluorinated Plasmas," Invited paper,
Physica Status Solidi B, Vol. 202, pp. 605-642, July 1997.
207. A.J. Steckl, "Exploring the Frontiers of Optoelectronics with
FIB Technology," Proceedings of the Advanced Workshop on the
Frontiers in Electronics, IEEE Cat. No. 97TH8292, pp. 47-50,
1997.
206. D.H. Naghski, J.E. Boyd, H.E. Jackson and A.J. Steckl,
"Potential for Size Reduction of AlGaAs Optical Channel
Waveguide Structures Fabricated by Focused Ion Beam Implantation and
Oxidation," Optics Communications, Vol. 150 (1-6), pp.
97-100, May 1998.
205. A.J. Steckl, J. Devrajan, C. Tran, and R.A. Stall, "Growth
and Characterization of GaN Thin Films on SiC SOI Substrates,"
Journal of Electronic Materials, Vol. 26, pp. 217-223, March
1997.
204. Ferguson, C. Tran, R. Karlicek, R. Stall, J. Devrajan and A.J.
Steckl, "The Growth of GaN on 3C SiC SOI compliant
substrates," Proc. 23rd Int. Symp. Compound Semiconductors
(1996).
203. A.J. Steckl, J. Devrajan, S. Tlali, H.E. Jackson, C.Tran, S.
Gorin,
and L. Ivanova, "Characterization of 3C-SiC Crystals grown by
Thermal Decomposition from Methyltrichlorosilane," Applied
Physics Letters, Vol. 69, pp. 3824 - 3826, Dec. 1996.
202. V. Saxena, A.J. Steckl, M. Vichare, M.L. Ramalingam and K.
Reinhart, "Temperature Effects in the Operation of High Voltage
Ni/6H-SiC Schottky Rectifiers," Transactions of Third
International Conference on High Temperature Electronics, pp. VII.
15 - VII. 20, 1996.
201. A.J. Steckl, J. Devrajan, C. Tran and R.A. Stall, "SiC RTCVD
Carbonization of the (111) Si SOI structures and subsequent MOCVD
growth of GaN," Applied Physics Letters, Vol. 69, pp.
2264-2266, Oct. 1996.
200. S.R. Smith, A.O. Evwaraye, A.J. Steckl, C. Yuan, W.C. Mitchel and
M.D. Roth, "Determination of the Conduction Band Discontinuity
in n-type 3C-SiC/6H-SiC Heterojunction," Institute of Physics
Conference Series, Vol. 142, pp. 317 - 319, 1996.
199. A.J. Steckl, C. Yuan, J. Devrajan, J.C. Chaudhuri, R. Thokala and
M.J. Loboda, "Growth of SiC by CVD from Silacyclobutane,"
Institute of Physics Conference Series, Vol. 142, pp. 181 -
184, 1996. 198. P.H. Yih, V. Saxena and A.J. Steckl, "6H-SiC Reactive Ion
Etching for the Fabrication of Semiconductor Devices,"
Institute of Physics Conference Series, Vol.142, pp. 621-624,
1996.
197. J.N. Su and A.J. Steckl, "Fabrication of High Voltage SiC
Schottky Barrier Diodes by Ni Metallization," Institute of
Physics Conference Series, Vol. 142, pp. 697-700, 1996.
196. V. Saxena, A.J. Steckl and G. Bordonaro, "Sub-Micron
Patterning of 6H-SiC by Anisotropic Reactive Ion Etching,"
Proceedings of the Symposium on Wide Bandgap Semiconductors and
Devices, Electrochemical Society Proceedings, Vol. 95-21, pp.
247-249, October 1995.
195. J. Chaudhuri, X. Chang, C. Yuan and A.J. Steckl, "Highly
Perfect Thin Films of SiC - X-ray Double Crystal Diffractometry and
X-ray Double Crystal Topographic Study," Thin Solid Films, Vol.
292, pp. 1-6, Jan. 1997.
194. A.J. Steckl, P. Chen, H.E. Jackson, A.G. Choo, X. Cao, J.T. Boyd
and M. Kumar, "Review of Focused Ion Beam Implantation Mixing
for the Fabrication of GaAs-Based Optolectronic Devices,"
Journal of Vacuum Science and Technology B, Vol. 13, pp.
2570-2575, Nov./Dec. 1995.
193. J.N. Su and A.J. Steckl, "300°C Operation of High Voltage
SiC Schottky Rectifier," Proceedings of Workshop on High
Temperature Power Electronics, pp. 50-53, April 1995.
192. H.E. Jackson, X. Cao, A.G. Choo, L.M. Smith, P. Chen and A.J.
Steckl, "Anisotropic Exciton Diffusion in FIB-Patterned AlGaAs/GaAs
Multiple Quantum Well Wire-Like Structures," Proceedings of the
22nd International Conference on the Physics of
Semiconductors," D. Lockwood, ed., p. 1723, World Scientific,
Singapore (1995).
191. A.J. Steckl, J. Devrajan, W.J. Choyke, R.P. Devaty, M. Yoganathan
and S.W. Novak, "Effect of Annealing Temperature on 1.5 µm
Photoluminescence at 25°C from Er-Implanted 6H-SiC," Journal
of Electronic Materials., Vol. 25, pp. 869-873, May 1996.
190. C. Yuan, A.J. Steckl, J. Chaudhari, R. Thokola and M.J. Loboda,
"Reduced Temperature Growth of Crystalline 3C-SiC Films on
6H-SiC by Chemical Vapor Deposition from Silacyclobutane,"
Journal of Applied Physics, Vol. 78, pp. 1271-1273, July
1995.
189. P.H. Yih and A.J. Steckl, "Residue-Free Reactive Ion Etching
of 3C- and 6H-SiC in Fluorinated Mixture Plasmas," Journal of
the Electrochemical Society, Vol. 142, pp. 2853-2860, August
1995.
188. A.J. Steckl, P. Chen, X. Cao, H.E. Jackson, M. Kumar and J.T.
Boyd, "GaAs Quantum Well Distributed Bragg Reflection Laser
with AlGaAs/GaAs Superlattice Gratings Fabricated by Focused Ion
Beam Mixing," Applied Physics Letters, Vol. 67, pp.
179-181, July 1995.
187. J. Xu and A.J. Steckl, "Stain-Etched Porous Si Visible Light
Emitting Diodes," Journal of Vacuum Science and Technology B,
Vol. 13, pp. 1221-1224, May/June 1995.
186. L. Wei, M. Vaudui, C-L. Hwang, G. White, J. Xu and A.J. Steckl,
"Heat Conduction in Si Thin Films: Effect of
Microstructure," Journal of Materials Research, Vol. 10,
pp. 1889-1896, August 1995.
185. P. Chen and A.J. Steckl, "Selective Compositional Mixing in GaAs/AlGaAs Superlattice Induced by Low Dose Si Focused Ion Beam
Implantation," Journal of Applied Physics, Vol. 77,
pp.5616-5624, June 1995. Reprinted in Quantum Well Intermixing
for Photonics, E.H. Li, Editor, SPIE Milestone Series, 1998.
184. M. Kumar, A.G. Choo, P. Chen, G.N. Debrander, J.T. Boyd, H.E.
Jackson, A.J. Steckl, R.D. Burnham and S.C. Smith,
"Characterization of Optical Channel Waveguides Formed by FIB
Induced Compositional Mixing in AlGaAs MQW's," Superlattices
and Microstructures Journal, Vol. 15, 421-425, 1994.
183. J.P. Li and A.J. Steckl, "Nucleation and Void Formation
Mechanisms in SiC Thin Film Growth on Si by Carbonization,"
Journal of Electrochemical Society, Vol. 142, pp. 634-641,
February 1995.
182. J. Xu, H.C. Mogul and A.J. Steckl, "Visible Photoluminescence
from Stain-Etched Silicon Nanostructure," Proceedings of the
2nd International Symposium on Quantum Confinement, Electrochemical
Society Proceedings, Vol. 94-17, pp. 231-239, 1994.
181. J. Xu and A.J. Steckl, "Fabrication of Visibly Photoluminescent Si Microstructures by Focused Ion Beam Implantation
and Wet Etching," Applied Physics Letters, Vol. 65, pp.
2081-2083, October 1994.
180. A.G. Choo, X. Cao, S. Tlali, H.E. Jackson, P. Chen, A.J. Steckl
and J.T. Boyd, "Raman and Photoluminescence Characterization of
FIB Patterned AlGaAs/GaAs Multiple Quantum Wells," Proceedings
of 1993 MRS Symposium on Diagnostic Techniques of Semiconductor
Materials Processing, Vol. 324, pp. 193-198, 1994.
179. A.J. Steckl, J. Xu, H.C. Mogul and S.M. Prokes, "Si Hydrides
on Stain-Etched Porous Si Thin Films and Correlation with
Crystallinity and Photoluminescence," Journal of the
Electrochemical Society, Vol. 142, pp. L69-71, May 1995.
178. Q-Y. Tong, U. Gösele, C. Yuan, A.J. Steckl and M. Reiche,
"Silicon Carbide Wafer Bonding," Journal of the
Electrochemical Society, Vol. 142, pp. 232-236, January 1995.
177. J.N. Su and A.J. Steckl, "SiC Devices for Space
Electronics-High Voltage, Temperature Hard Contacts," SAE
Aerospace Meeting Proceedings, Technical Paper Series 94/227,
Dayton, OH, April 1994.
176. J. Xu and A.J. Steckl, "Visible Electroluminescence from
Stain-Etched Porous Si Diodes," IEEE Electron Device Letters,
Vol. 15, pp. 507-509, December 1994.
175. H.C. Mogul, J. Xu, A.J. Steckl, S.J. Clarson, J.O. Stuart and
C.L.
Hoffman, "Light Emission and Related Materials Properties of
Siloxene and Si-based Zeolites," Proceedings of 1994
Electrochemical Society 7th International Symposium on Si Materials
and Science and Technology, Vol. 99-10, pp. 563-568, May
1994.
174. A.J. Steckl, C. Yuan, Q-Y. Tong, U. Gösele and M.J. Loboda,
"SiC SOI Structures by Direct Carbonization and Growth with SCB,"
Proceedings of 1994 Electrochemical Society Symposium on
Silicon-on-Insulator Technology and Devices, Vol. 99-11, pp.
117-122, May 1994.
173. A.J. Steckl, C. Yuan, Q-Y. Tong, U. Gösele and M.J. Loboda,
"SiC SOI Structures by Direct Carbonization Conversion and Post
Growth from Silacyclobutane," Journal of Electrochemical
Society, Vol. 141, pp. L66-68, June 1994.
172. A.G. Choo, S. Tlali, H.E. Jackson, J.P. Li and A.J. Steckl,
"Raman Scattering Characterization of Ultrathin Films of ß-SiC,"
Proceedings of 1993 MRS Symposium on Diagnostic Techniques of
Semiconductor Materials Processing, Vol. 324, pp. 267-271,
1994.
171. X.L. Cao, A.G. Choo, L.M. Smith, H.E. Jackson, P. Chen and A.J.
Steckl, "Time-Resolved Photoluminescence from Patterned GaAs/AlGaAs
Multiple Quantum Well Structures," Proceedings of 1993 MRS
Symposium on Growth, Processing and Characterization of
Semiconductor Heterostructures, Vol. 326, pp. 531-536, 1994.
170. P. Chen and A.J. Steckl, "Vacancy Enhanced Al-Ga
Inter-Diffusion in Si FIB-Implanted Superlattice," Proceedings
of 1993 MRS Symposium on Defects in Advanced Semiconductors, Vol. 325,
pp. 37-42, 1994.
169. H.Q. Yan, H. Wang and A.J. Steckl, "Low Energy Ion Beam
Assisted Deposition of Low Resistivity Al Using TMAA,"
Proceedings of 1993 MRS Symposium on Materials Synthesis and
Processing Using Ion Beams, Vol. 316, pp. 863-868, 1994.
168. C. Yuan, A.J. Steckl and M.J. Loboda, "Effect of
Carbonization on the Growth of 3C-SiC on Si (111) by Silacyclobutane,"
Applied Physics Letters, Vol. 64, pp. 3000-3002, May 1994.
167. A.J. Steckl and J.N. Su, "High Voltage, Temperature-Hard
3C-SiC Schottky Diodes Using All-Ni Metallization," Technical
Digest of International Electron Device Meeting, IEEE Cat. No. 93CH3361-3,
pp. 695-698, December 1993.
166. M.D. Roth, A.J. Steckl, J.P. Li, J. Edgar and Z.J. Yu,
"Atomic Force Microscopy of AlN Thin Films," Silicon
Carbide and Related Materials, Institute of Physics Conference
Series, Vol. 137, pp. 553-556, 1994.
165. A.J. Steckl, J.N. Su, P.H. Yih, C. Yuan and J.P. Li, "Ohmic
and Rectifying Contacts to 3C-SiC Using All-Ni Technology," Silicon
Carbide and Related Materials, Institute of Physics Conference
Series, Vol. 137, pp. 653-656, 1994.
164. P.H. Yih, J.P. Li and A.J. Steckl, "High Breakdown Voltage
SiC/Si Heterojunction Diodes by Rapid Thermal Chemical Vapor
Deposition with Methylsilane," Silicon Carbide and Related
Materials, Institute of Physics Conference Series, Vol. 137,
pp. 577-580, 1994.
163. A.J. Steckl, C. Yuan, J.P. Li and M.J. Loboda, "Reduced
Temperature Heteroepitaxial Growth of 3C-SiC on Si (100) from
Silacyclobutane," Silicon Carbide and Related Materials,
Institute of Physics Conference Series, Vol. 137, pp. 79-82,
1994.
162. P.H. Yih and A.J. Steckl, "Reactive Ion Etching of 6H-SiC in
CHF3
Plasma," Silicon Carbide and Related Materials,
Institute of Physics Conference Series, Vol. 137, pp.
317-320, 1994.
161. P.H. Yih and A.J. Steckl, "Residue-Free Reactive Ion Etching
of Silicon Carbide in Fluorinated Plasmas: II. 6H-SiC," Journal
of the Electrochemical Society, Vol. 142, pp. 312-319,
January 1995.
160. O.M.R. Chyan, D.G. Frank, A.T. Hubbard, J.P. Li and A.J. Steckl,
"Measurement of Complete Auger Electron Emission Angular
Distributions from ß-SiC Films on Si (100)," Journal of Vacuum
Science and Technology A, Vol. 12, pp. 457-464, March/April
1994.
159.A.J. Steckl, J.N. Su, J. Xu, J.P. Li, C. Yuan, P.H. Yih and H.C.
Mogul, "Selective-Area Room Temperature Visible Photoluminescence
from SiC/Si Heterostructures," Applied Physics Letters, Vol. 64,
pp. 1419-1420, March 1994.
158. P.H. Yih, J.P. Li and A.J. Steckl, "SiC/Si Heterojunction
Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal
Chemical Vapor Deposition," IEEE Transactions on Electron Devices, Vol.
ED-41, pp. 281-287, March 1994.
157. A.J. Steckl, J. Xu and H.C. Mogul, "Relationship between
Crystallinity and Photoluminescence in Stain-Etched Porous Si,"
Journal of the Electrochemical Society, Vol. 141, pp.
674-679, March 1994.
156. A.J. Steckl, C. Yuan, J.P. Li and M.J. Loboda, "Growth of
Crystalline 3C-SiC on Si at Reduced Temperatures by Chemical Vapor
Deposition from Silacyclobutane," Applied Physics Letters, Vol.
63, pp. 3347-3349, December 1993.
155. H.C. Mogul, A.J. Steckl and E. Ganin, "Electrical Properties
of Si p+-n
Junctions for sub-0.25µm CMOS Fabricated by Ga FIB
Implantation," IEEE Transactions on Electron Devices, Vol. ED-40,
pp. 1823-1892, October 1993.
154. H.C. Mogul, A.J. Steckl and S.W. Novak, "Shallow Si p+-n
Junctions Fabricated by Focused Ion Beam Ga+
Implantation Through Thin Ti and TiSi2
Layers," Journal of Applied Physics, Vol. 74, pp.
2318-2322, August 1993.
153. A.J. Steckl, J.N. Su, J. Xu, J.P. Li, C. Yuan, P.H. Yih and H.C.
Mogul, "Characterization of Photoluminescence from Anodically
Etched SiC/Si Heterostructures," MRS Proceedings of Symposium
on Silicon-Based Optoelectronics Materials, Vol. 298, pp.
361-366, April 1993.
152. A.J. Steckl, J. Xu and H.C. Mogul, "Photoluminescence of
Chemically Etched Polycrystalline and Amorphous Si Thin Films,"
MRS Proceedings of Symposium on Silicon-Based Optoelectronics
Materials, Vol. 298, pp. 211-216, April 1993.
151. A.J. Steckl, M.D. Roth, J.A. Powell and D.J. Larkin, "Atomic
Probe Microscopy of 3C SiC Films Grown on 6H SiC Substrates,"
Applied Physics Letters, Vol. 62, pp. 2545-2547, May 1993.
150. J.P. Li and A.J. Steckl, "AFM Study of Nucleation and Void
Formation in SiC Carbonization of Si," MRS Proceedings of
Symposium on Evolution and Thin Film Microstructure, Vol. 280,
pp. 739-744, December 1992.
149. A.J. Steckl J. Xu and H.C. Mogul, "Submicron Selective
Photoluminescence in Porous Si by Focused Ion Beam
Implantation," MRS Proceedings of Symposium on Semiconductor
Heterostructures for Photonic and Electronic Applications, Vol. 281,
pp. 519-524, 1993.
148. M. Kumar, G. Debrabander, P. Chen, J.T. Boyd, A.J. Steckl, A.G.
Choo, H.E. Jackson, R.D. Burnham and S.C. Smith, "Optical
Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed
by FIB-Induced Composition Mixing," MRS Proceedings of
Symposium on Semiconductor Heterostructures for Photonic and
Electronic Applications, Vol. 281, pp. 313-318, 1993.
147. A.J. Steckl, P. Chen, A.G. Choo, H. Jackson, J.T. Boyd, S.W.
Novak, A. Ezis, P.P. Pronko and R.M. Kolbas, "Enhanced
Photoluminescence from AlGaAs/GaAs Superlattice Gratings Fabricated
by Si FIB Implantation," MRS Proceedings of Symposium on
Semiconductor Heterostructures for Photonic and Electronic
Applications, Vol. 281, pp. 319-324, 1993.
146. J.P. Li, A.J. Steckl, I. Golecki, F. Reidinger, L. Wang, X.J. Ning
and P. Pirouz, "Structural Characterization of Nanometer SiC
Films Grown on Si," Applied Physics Letters, Vol. 62,
pp. 3135-3137, June 1993.
145. M. Kumar, V. Gupta, G.N. DeBrabander, P. Chen, J.T. Boyd, A.J.
Steckl, A.G. Choo, H.E. Jackson, R.D. Burnham and S.C. Smith,
"Optical Channel Waveguides in AlGaAs Multiple Quantum Well
Structures Formed by Focused Ion Beam Induced Compositional
Mixing," IEEE Photonics Technology Letters, Vol. 4, pp.
435-438, April 1993. Reprinted in Quantum Well Intermixing for
Photonics, E.H. Li, Editor, SPIE Milestone Series, 1998.
144. P.H. Yih and A.J. Steckl, "Effects of Hydrogen Additive on
Obtaining Residue-Free Reactive Ion Etching of ß-SiC in Fluorinated
Plasmas," Journal of the Electrochemical Society , Vol. 140,
pp. 1813-1824, June 1993.
143. J.P. Li and A.J. Steckl, "Accurate Determination of Defects
in the Gate Oxide of Si MOS Devices by Propane Infiltration,"
Journal of the Electrochemical Society, Vol. 140, pp. L89-92,
June 1993.
142. A.J. Steckl, J. Xu and H.C. Mogul, "Photoluminescence from
Stain-Etched Poly-Crystalline Si Thin Films," Applied Physics
Letters, Vol. 62, pp. 2111-2113, April 1993.
141. A.J. Steckl, J. Xu, H.C. Mogul and S. Mogren, "Doping-Induced
Selective Area Photoluminescence in Porous Silicon," Applied
Physics Letters, Vol. 62, pp. 1982-1984, April 1993.
140. H.C. Mogul and A.J. Steckl, "Rapid Thermal Annealing of
Nanoscale Si p+-n
Junctions Fabricated by Low Energy FIB Ga+
Implantation," IEEE Electron Device Letters, Vol. 14,
pp. 123-125, March 1993.
139. J.P. Li, P.H. Yih and A.J. Steckl, "Thickness Determination
of ß-SiC Thin Films Grown on Si by RTCVD," Journal of the
Electrochemical Society, Vol. 140, pp. 178-182, January 1993.
138. H.C. Mogul, A.J. Steckl and G. Webster, "Electrochemical
Capacitance-Voltage Depth Profiling of Nanometer-Scale Junctions
Fabricated by Ga+ FIB
Implantation into Silicon," Applied Physics Letters, Vol. 61, pp.
554-556, August 1992.
137. A.J. Steckl and J.P. Li, "Effect of Carbonization Gas Precursor
on the Heteroepitaxial Growth of SiC-on-Si by RTCVD," MRS Proceedings of
Symposium on Wide Band-Gap Semiconductors, Vol. 242, pp. 537-542,
1992.
136. A.J. Steckl, H.C. Mogul and S. Mogren, "Si Nanostructure
Fabrication by FIB Selective Doping and Anisotropic Etching,"
MRS Proceedings of Symposium on Light Emission from Silicon, Vol. 256,
pp. 123-126, 1992.
135. A.G. Choo, H.E. Jackson, P. Chen, A.J. Steckl, V. Gupta and J.T.
Boyd, "Excitation Power Dependence of Photoluminescence in CIB
and FIB Implanted Superlattices," MRS Proceedings of Symposium
on Advanced III-V Compound Semiconductor Growth, Processing and
Devices, Vol. 240, pp. 697-701, 1992.
134. A.G. Choo, V. Gupta, H.E. Jackson, J.T. Boyd, A.J. Steckl, P.
Chen, B.L. Weiss and R.D. Burnham, "Raman Characterization in
AlGaAs Superlattice Channel Waveguide Structures Formed by CIB and
FIB Implantation," MRS Proceedings of Symposium on Advanced
III-V Compound Semiconductor Growth, Processing and Devices, Vol. 240,
pp. 691-695, 1992.
133. A.J. Steckl, P. Chen, A. Choo, H. Jackson, J.T. Boyd, P.P.
Pronko,
A. Ezis and R. Kolbas, "Dose Effects in Si FIB-Mixing of Short
Period AlGaAs/GaAs Superlattice Structures," MRS Proceedings of
Symposium on Advanced III-V Compound Semiconductor Growth,
Processing and Devices, Vol. 240, pp. 703-708, 1992.
132. A.J. Steckl and J.P. Li, "Mechanisms in the Low Pressure
Growth of SiC-on-Si by RTCVD," C.Y. Yang and G.L. Harris, eds.,
Springer Proceedings in Physics, Vol. 71, Springer-Verlag,
pp. 49-59, 1992.
131. A.J. Steckl and P.H. Yih,"Effect of H2
Additive on Reactive Ion Etching of ß-SiC in CHF3/O2
Plasma," C.Y. Yang and G.L. Harris, eds., Springer Proceedings
in Physics, Vol. 71, Springer-Verlag, pp. 423-429, 1992.
130. A.J. Steckl and J.P. Li, "Uniform ß-SiC Thin Film Growth on
Si by Low Pressure RTCVD," Applied Physics Letters, Vol. 60,
pp. 2107-2109, April 1992.
129. A.J. Steckl and P.H. Yih, "Residue-Free Reactive Ion Etching
of ß-SiC in CHF3/O2
with H2
Additive," Applied Physics Letters, Vol. 60, pp.
1966-1968, April 1992.
128. A.J. Steckl, S. Mogren, M.W. Roth and J.P. Li, "Atomic Probe
Imaging of ß-SiC Thin Films Grown on (100) Si," Applied
Physics Letters, Vol. 60, pp. 1495-1497, March 1992.
127. A.J. Steckl, H.C. Mogul and S. Mogren, "Localized Fabrication
of Si Nanostructures by FIB Implantation," Applied Physics
Letters, Vol. 60, pp. 1833-1835, April 1992.
126. A.J. Steckl and J.P. Li, "RTCVD Growth of Nanometer-Thin
SiC-on-Si," Thin Solid Films Journal, Vol. 216, pp.
149-154, August 1992.
125. S.W. Novak, C.W. Magee, A.J. Steckl and H.C. Mogul, "SIMS
Depth Profiling of Nanometer-Scale p+-n
Junctions Fabricated by Ga+
Focused Ion Beam Implantation," J. Vac. Sci. Tech., Vol.
B10, pp. 333-335, January 1992.
124. A.J. Steckl and J.P. Li, "Epitaxial Growth of ß-SiC on Si by
RTCVD with C3H8
and SiH4,"
IEEE Trans. Electron. Dev., Vol. 39, pp. 64-74, January 1992.
123. A.J. Steckl, H.C. Mogul, S.W. Novak and C.W. Magee, "Low
Energy Off-Axis FIB Ga+
Implantation into Si," J. Vac. Sci. Tech. Vol. B9, pp.
2916-2919, November/December 1991.
122. A.J. Steckl, H. Mogul and S. Mogren, "Electrical Properties
of Nanometer-Scale Si p+-n
Junctions Fabricated by Low Energy Ga+
FIB Implantation," J. Vac. Sci. Tech., Vol. B9, pp.
2718-2721, September/October 1991.
121. S. Mogren and A.J. Steckl, "STM Characterization of Focused
Ion Beam Profiles," MRS Symposium on Nanostructures (EA-26),
pp. 103-106, December 1990.
120. A.J. Steckl, H.C. Mogul and S.M. Mogren, "Ultrashallow Si p+-n
Junction Fabrication by Low Energy Ga+
Focused Ion Beam Implantation," J. Vac. Sci. Tech., Vol. B8,
pp. 1937-1940, November/December 1990.
119. W.S. Pan and A.J. Steckl, "Reactive Ion Etching of SiC Thin
Films by Mixtures of Fluorinated Gases and Oxygen," Journal of
the Electrochemical Society, Vol. 137, pp. 212-220, January
1990.
118. C.-M. Lin and A.J. Steckl, "Fabrication of Sub-Micrometer
PMOSFET's with Sub-100nm p+-n Shallow Junctions Using Group III Dual Ion
Implantation," Solid-State Electronics, Vol. 33, pp. 472-474, April 1990.
117. A.J. Steckl, C-M. Lin, D. Patrizio, A.K. Rai and P.P. Pronko,
"Broad and Focused Ion Beam Ga+
Implantation Damage in the Fabrication of p+-n
Si Shallow Junctions," Mat. Res. Soc. Proceedings, Vol. 147,
pp. 161-166, 1989.
116. W.S. Pan and A.J. Steckl, "Mechanisms in Reactive Ion Etching
of Silicon Carbide Thin Films," Amorphous and Crystalline
Silicon Carbide II, Vol. 43, Springer-Verlag, pp.
217-223, 1989.
115. C.-M. Lin, A.J. Steckl and T.P. Chow, "Sub-100nm p+-n Shallow
Junctions Fabricated by Group III Dual Ion Implantation,"
Applied Physics Letters, Vol. 54, pp. 1790-1792, May 1989.
114. W.S. Pan and A.J. Steckl, "Reactive Ion Etching for SiC
Device Fabrication," in Amorphous and Crystalline Silicon
Carbide, G.L. Harris and C.Y. Yang, eds., Springer Proceedings
in Physics, Vol. 34, Springer-Verlag, pp. 192-198, 1989.
113. C.-M. Lin, A.J. Steckl and T.P. Chow, "Electrical Properties
of Ga-Implanted Si p+-n Shallow Junctions Fabricated by Low
Temperature Rapid Thermal Annealing," IEEE Electron Device
Letters, Vol. EDL-9, pp. 594-597, November 1988.
112. C.-M. Lin, A.J. Steckl and T.P. Chow, "Si p+-n Shallow
Junction Fabrication Using On-Axis Ga+ Implantation," Applied
Physics Letters, Vol. 52, pp. 2049-2051, June 1988.
111. W.S. Pan and A.J. Steckl, "Selective Reactive Ion Etching of
Tungsten Films in Fluorinated Gases," J. Vac. Sci. Tech., Vol. B6,
pp. 1073-1080, July/August 1988.
110. S.D. Chu and A.J. Steckl, "The Effect of Trench-Gate-Oxide
Structure on EPROM Device Operation," IEEE Electron Device
Letters, Vol. 9, pp. 284-286, June 1988.
109. C.M. Lin, A.J. Steckl and T.P. Chow, "Thin Layer p-n Junction
Fabrication Using Ga and In Focused Ion Beam Implantation," J.
Vac. Sci. Tech., Vol. B6, pp. 977-981, May/June 1988.
108. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and H-S. Jin,
"Characteristics and Surface Analysis of Ion Beam Deposition
from Binary Boron Platinum (Pt58B42) Liquid-Metal Ion Source,"
Journal of Applied Physics, Vol. 63, pp. 878-886, February
1988.
107. C.M. Lin, A.J. Steckl and T.P. Chow, "Rapid Thermal Annealing
of FIB-Implanted Ga Shallow Impurity Profiles," Materials Res.
Soc. Proceedings, Vol. 101, pp. 495-500, 1988.
106. A.J. Steckl, J.C. Corelli and J.F. McDonald, "Focused Ion
Beam Technology and Applications," Emerging Technologies for
In-Situ Processing, D. Ehrlich and V.T. Nguyen, Eds., pp.
179-199, NATO ASI Series E-Applied Science, No. 139, M. Nijhoff
Publishers, 1988.
105. J.F. McDonald, R. Rajapakse, J.C. Corelli and A.J. Steckl,
"Optimized Focused Ion Beam Inspection and Repair of Wafer
Scale Interconnections," SPIE Proceedings, Vol. 773, pp.
206-215, 1987.
104. W.-S. Pan and A.J. Steckl, "Anisotropic and Selective
Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma," Science
and Technology of Microfabrication, Materials Research Society
Proceedings, Vol. 76, pp. 157-162, 1987.
103. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and H.-S. Jin,
"Surface Analysis of Palladium Boride Liquid Metal Ion Beam
Deposition on Single Crystal Solid Surface," Journal of Vacuum
Science and Technology, Vol. A5, pp. 1362-1366, July/August
1987.
102. R.H. Higuchi-Rusli, J.C. Corelli, A.J. Steckl and K.C. Cadien,
"Development of Test Bed System for High Melting Temperature
Alloy Fabrication and Mass Spectroscopy Analysis of Liquid Metal Ion
Beam Source," Journal of Vacuum Science and Technology, Vol. A5,
pp. 2073-2076, July/August 1987.
101. J.C. Corelli, A.J. Steckl, D. Pulver and J. Randall, "Ultra
Low Dose Effects in Ion-Beam Induced Grafting of PMMA," Nuclear
Instruments and Methods of Physics Research. B, Vol. 19/20,
pp. 1009-1012, 1987.
100. R.H. Higuchi-Rusli, K.C. Cadien, J.C. Corelli and A.J. Steckl,
"Development of Boron Liquid Metal Ion Source for the Focused
Ion Beam System," Journal of Vacuum Science and Technology,
Vol. B5, pp. 190-194, January/February 1987.
99. J.O. Choi, S.Y. Kim, J.A. Moore, J.C. Corelli and A.J. Steckl,
"Enhanced Plasma Etch Resistance of Acrylic Acid - Calcium
Acetate - Modified PMMA," Journal of Vacuum Science and
Technology, Vol. B5, pp. 382-385, January/February 1987.
98. A.J. Steckl, S. Balakrishnan, H-S. Jin and J.C. Corelli, "Micromachining
of Polyimide Films with Focused Ion Beams," Microelectronic
Engineering, Vol. 5, pp. 461-462, December 1986.
97. A.J. Steckl, C.-M. Lin, S.-D. Chu and J.C. Corelli,
"Simulation of Graded-Base Bipolar Transistor Characteristics
Fabricated with a Focused Ion Beam," Microelectronic
Engineering, Vol. 5, pp. 179-189, December 1986.
96. B. Zetterlund and A.J. Steckl, "Low Temperature Operation of
Silicon Surface Channel Charge Coupled Devices," IEEE
Transactions on Electron Devices, Vol. ED-34, pp. 39-51,
January 1987.
95. S.S. Bencuya, A.J. Steckl and B.C. Burkey, "Impact of Edge
Effects on Charge - Packet Splitting Accuracy," Solid State
Electronics, Vol. 30, pp. 299-305, 1987.
94. A.J. Steckl, "Prospects for Particle Beam and In-Situ
Processing of Integrated Circuits," Invited Paper,
Proceedings of IEEE, Vol. 74, pp. 1753-1774, December 1986.
93. J.F. McDonald, A.J. Steckl, C.A. Neugebauer, R.O. Carlson and A.S.
Bergendahl, "Multilevel Interconnections for Wafer Scale
Integration," Invited Paper, Journal of Vacuum Science
and Technology, Vol. A4, pp. 3127-3138, November/December
1986. 92. W.-J. Lu, A.J. Steckl and T.P. Chow, "Electrical
Characteristics of Si Devices Fabricated with Completely Consumed
Carbide (C3) - Dielectric Isolation Process," Journal of the
Electrochemical Society, Vol. 133, pp. 1180-1185, June 1986.
91. A.J. Steckl, S.P. Murarka and J.C. Corelli, "In-Situ
Processing of Semiconductor Devices," Invited Paper,
1986 Custom Integrated Circuits Conference, 86CH2258-2, pp.
586-590, May 1986.
90. S.-D. Chu, J.C. Corelli, A.J. Steckl, R.H. Reuss, W.M. Clark, D.B.
Rensch and W.G. Morris, "Comparison of npn Transistors
Fabricated with Broad Beam and Spatial Profiling Using Focused Ion
Beam Implantation," Journal of Vacuum Science and Technology,
Vol. B4, pp. 375-379, January/February 1986.
89. S.-Y. Kim, J. Choi, D. Pulver, J.A. Moore, J.C. Corelli and A.J.
Steckl, "Optimization of Solvent Development in PMMA
Radiation-Induced Graft Lithography," Journal of Vacuum Science
and Technology, Vol. B4, pp. 403-408, January/February 1986.
88. D.C. King, A.J. Steckl, J.L. Morgenstern, J.F. McDonald, M.A.
Bourgeois, D.J. Yemc and I. Elminyawai, "The Flip-and-Shift
Signal Enhancement Application for a Predictive E-Beam Pattern
Registration Model," Journal of Vacuum Science and Technology,
Vol. B4, pp. 273-279, January/February 1986.
87. J. Sugiura, W.-J. Lu, K.C. Cadien and A.J. Steckl, "Reactive
Ion Etching of SiC Thin Films Using Fluorinated Gases," Journal
of Vacuum Science and Technology, Vol. B4, pp. 349-354,
January/February 1986.
86. T.P. Chow, W.-J. Lu, A.J. Steckl and B.J. Baliga, "Thin Film
Properties of Sputtered Niobium Silicide on SiO2,
Si3N4,
and N+ poly-Si,"
Journal of Electrochemical Society, Vol. 133, pp. 175-178,
January 1986.
85. W.-J. Lu, A.J. Steckl and T.P. Chow, "Completely Consumed
Carbide - A New Process for Dielectric Isolation," VLSI Science
and Technology, Electrochemical Society Proceedings, Vol. 85-5,
pp. 244-252, May 1985.
84. R.M. Tarro, J.T. Warden, J.C. Corelli, J.A. Moore, A.J. Steckl and
E. Galiano, "Electron Spin Resonance Studies of Irradiated PMMA,"
Microcircuit Engineering 1984, pp. 537-544, Academic Press,
NY, 1985.
83. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "Charge Domain
Integrated Circuits for Signal Processing," IEEE Journal of
Solid State Circuits, Vol. SC-20, No. 12, pp. 562-571, April
1985.
82. M.E. Haslam, J.F. McDonald, D.C. King, M.A. Bourgeois, D.G.L. Chow
and A.J. Steckl, "Two Dimensional Haar Thinning for Data Base
Compaction in Fourier Proximity Correction for Electron Beam
Technology," Journal of Vacuum Science and Technology, Vol. 3,
pp. 165-173, January/February 1985.
81. H. Hamedeh, J.C. Corelli and A.J. Steckl, "Focused Ga+
Beam Direct Implantation for Si Device Fabrication," Journal of
Vacuum Science and Technology, Vol. 3, pp. 91-95,
January/February 1985.
80. A.J. Steckl, "The SRC-RPI Program on Advanced Beam Systems
for VLSI," SRC Newsletter, Vol. 2, No. 11, pp. 1-3,
November 1984.
79. T.P. Chow and A.J. Steckl, "Plasma Etching of Refractory
Gates for VLSI Applications," Journal of Electrochemical
Society, Vol. 131, pp. 2325-2335, October 1984.
78. S. Bencuya and A.J. Steckl, "Charge Packet Splitting in
CCD's,"
IEEE Transactions on Electron Devices, Vol. ED-31, pp.
1494-1501, October 1984.
77. J.F. McDonald, K. Rose, E. Rogers and A.J. Steckl, "Wafer
Scale Integration," Invited Paper, IEEE Spectrum, Vol. 21,
pp. 32-39, October 1984.
76. A.J. Steckl, J.A. Moore, J.C. Corelli and W.-T. Liu, "Image
Enhancement in High Resolution Lithography through Polymer Grafting
Techniques," 1984 IEEE Symposium on VLSI Technology, IEEE Cat.
No. 84CH2061-0, pp. 60-61, September 1984.
75. J.A. Moore, J.C. Corelli, A.J. Steckl, J.T. Warden, R. Tarro,
W.-T. Liu and J.N. Randall, "Resist Sensitivity Enhancement in
Microlithography by In-Situ Polymerization," Polymer Reprints,
Vol. 25, No. 2, pp. 105-106, August 1984.
74. W.-J. Lu, A.J. Steckl, T.P. Chow and W. Katz, "Thermal
Oxidation of Silicon Carbide Thin Films," Journal of
Electrochemical Society, Vol. 131, pp. 1907-1914, August
1984.
73. A.J. Steckl, "Particle Beam Processing for Microfabrication,"
Proc. of Eighth Symposium on Ion Sources and Ion-Assisted
Technology, pp. 365-377, June 1984.
72. W.-T. Liu, J.C. Corelli, A.J. Steckl, J.A. Moore and J. Silverman,
"Resist Sensitivity Enhancement in X-Ray Lithography by In-Situ
Polymerization," Applied Physics Letters, Vol. 44, pp.
973-975, May 1984.
71. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "A Narrowband
Charge Domain Bandpass Filter," Proc. Custom Integrated
Circuits Conference, IEEE Cat. No. 84CH1987-7, pp. 399-403,
May 1984.
70. D.G.L. Chow, J.F. McDonald, D. King and A.J. Steckl,
"Comparison Between Haar and Walsh Transform Thinning of the
Lithography," Microcircuit Engineering, H. Ahmed, J.A.
Cleaver and G.A.C. Jones, eds., pp. 65-74, Academic Press, New York
1984.
69. T.P. Chow and A.J. Steckl, "A Review of Refractory Gates for
MOS VLSI," Technical Digest of International Electron Devices
Meeting, IEEE Cat. No. 83CH1973-7, pp. 513-517, December
1983.
68. D.G.L. Chow, J.F. McDonald, D.C. King and A.J. Steckl, "An
Image Processing Approach to Fast, Efficient Proximity Correction
for Electron Beam Lithography," Journal of Vacuum Science and
Technology, Vol. B1(4), pp. 1383-1390, October/December 1983.
67. T.P. Chow and A.J. Steckl, "Refractory Metal Silicides: Thin
Film Properties and Processing Technology," IEEE Transactions
on Electron Devices, Vol. ED-30, pp. 1480-1497, November
1983.
66. R. Pflueger, A.J. Steckl and J.C. Corelli, "Study of Defect
States in Silicon by Photoionization Spectroscopy,"
Electrochemical Society, 83-2, pp. 554-545, October 1983.
65. T.P. Chow, W.-J. Lu, A.J. Steckl and B.J. Baliga, "Thin Film
Properties of Sputtered Niobium Silicide on SiO2
and n+ Poly-Si,"
Electrochemical Society, 83-2, pp. 446-447, October 1983.
64. J.L. Morgenstern, A.J. Steckl, D.C. King, M.A. Bourgeois and G.R.
Redinbo, "A First-Order Physical Model of Electron-Beam
Scattering in E-Beam Lithography Registration," Electrochemical
Society, 83-2, pp. 329-330, October 1983.
63. W.-T. Liu, M. Bourgeois, J.A. Moore, J.C. Corelli and A.J. Steckl,
"PMMA Resist Sensitivity Amplification by E-Beam Induced
Grafting of Acrylic Acid," Electrochemical Society, 83-2,
pp. 331-332, October 1983.
62. W. Vidinski, A.J. Steckl and J.C. Corelli, "Correlation of
Photoluminescence and Symmetry Studies with Photoexcitation and
Decay Processes of Infrared Active Defects in Si," Journal of
Applied Physics, Vol. 54, July 1983.
61. W.-J. Lu, T.P. Chow, A.J. Steckl and W. Katz, "Thermal
Oxidation of Sputtered Silicon Carbide Thin Films,"
Electrochemical Society, 83-1, p. 133, May 1983.
60. T.P. Chow and A.J. Steckl, "A Review of Plasma Etching of
Refractory Metal Silicides," Proceedings of the Fourth
Symposium on Plasma Processing, Electrochemical Society, Vol. 83-10,
pp. 362-381, May 1983.
59. T.P. Chow, K. Hamzeh and A.J. Steckl, "Thermal Oxidation of
Niobium Silicide Thin Films," Journal of Applied Physics, Vol. 54,
pp. 2716-2719, May 1983.
58. A.J. Steckl and T.P. Chow, "The Development of Refractory
Metallization for High-Speed VLSI Circuits," Proceedings of
Fourth Brazilian Conference on Microelectronics, pp. 15-33, February
1983.
57. T.L. Vogelsong, J.J. Tiemann and A.J. Steckl, "A High-Q
Bandpass Filter Demonstrating Charge Domain Technology,"
Technical Digest of International Electron Devices Meeting, IEEE
Cat. No. 82CM1832-5, pp. 127-130, December 1982.
56. S.S. Bencuya, A.J. Steckl and T.L. Vogelsong, "Coefficient
Accuracy for CCD Packet Splitting Techniques," Technical Digest
of International Electron Devices Meeting, Cat. No. 82CM1832-5,
pp. 123-126, December 1982.
55. T.P. Chow and A.J. Steckl, "The Development of Refractory
Gate Metallization for VLSI," Electrochemical Society, Vol. 82-2,
pp. 353-354, October 1982.
54. J.A. Moore, D. Follett, K. Weiss, A.J. Steckl and W.-T. Liu,
"Polarity Reversal of PMMA Resist by Treatment with
Chlorosilanes," Electrochemical Society Meeting, Vol. 82-2,
pp. 321-322, October 1982.
53. S.S. Bencuya, A.J. Steckl, T.L. Vogelsong and J.J. Tiemann,
"Dynamic Packet Splitting in Charge Domain Devices," IEEE
Electron Device Letters, Vol. EDL-3, pp. 268-270, September
1982.
52. T.P. Chow and A.J. Steckl, "Plasma Etching of Sputtered Mo
and MoSi2 Thin
Films in NF3 Gas
Mixtures," Journal of Applied Physics, Vol. 53, pp.
466-468, August 1982.
51. C.D. Rude, T.P. Chow and A.J. Steckl, "Characterization of NbSi2
Thin Films," Journal of Applied Physics, Vol. 53, pp.
5703-5709, August 1982.
50. W. Vidinski, A.J. Steckl and J.C. Corelli, "Photoexcitation
Properties of Infrared Active Defects Induced by Neutron Irradiation
in Silicon," Journal of Nuclear Materials, Vol. 108, pp.
693-699, July 1982.
49. J.J. Tieman, T.L. Vogelsong and A.J. Steckl, "Charge Domain
Recursive Filters," IEEE Journal of Solid State Circuits, Vol. SC-17,
pp. 597-605, June 1982.
48. T.P. Chow, A.J. Steckl and R. Jerdonek, "Refractory MoSi2
and MoSi2/Polysilicon
Bulk CMOS Circuits," IEEE Electron Device Letters, Vol. EDL-3,
pp. 37-40, February 1982.
47. G.E. Smith and A.J. Steckl, "RECIPE-A Two Dimensional VLSI
Process Modeling Program," IEEE Transactions on Electron
Devices, Vol. ED-29, pp. 216-222, February 1982.
46. S. Okazaki, T.P. Chow and A.J. Steckl, "Edge-Defined
Patterning of Hyper-Fine Refractory Metal Silicide MOS
Structure," IEEE Transactions on Electron Devices, Vol. ED-28,
pp. 1364-1368, November 1981.
45. T.P. Chow, A.J. Steckl and D.M. Brown, "The Effect of
Annealing on the Properties of Silicidized Molybdenum Thin
Films," Journal of Applied Physics, Vol. 52, pp.
6331-6336, October 1981.
44. B. Zetterlund and A.J. Steckl, "Low Temperature Recombination
Lifetime in Si MOSFET's," Applied Physics Letters, Vol. 39,
pp. 155-156, July 1981. Reprinted in Low Temperature Electronics,
R. Kirchman, ed., IEEE Press, NY 1981.
43. T.P. Chow, M. Ghezzo, A.J. Steckl and D.M. Brown, "Silicon
Nitride Passivation for Short-Channel Molybdenum-Gate Devices,"
Electrochemical Society, Vol. 81-1, pp. 738-741, May 1981.
42. A.J. Steckl, J. McDonald and R.J. Gutmann, "VLSI Design
Automation and Interactive Modeling for Electron Beam
Lithography," Proc. Custom Integrated Circuits Conference, IEEE
Cat. No. 81CH1636-0, May 1981.
41. K.Y. Tam and A.J. Steckl, "Integrated PbS-Si IR Detector
Read-Out," IEEE Electron Device Letters, Vol. EDL-2, pp.
130-132, May 1981.
40. T.P. Chow and A.J. Steckl, "Planar Plasma Etching of Mo and
MoSi2 Using NF3,"
Technical Digest of International Electron Devices Meeting, IEEE
Cat. No. 80CH1616-2, pp. 149-151, December 1980.
39. G.E. Smith and A.J. Steckl, "Two-Dimensional Integrated
Circuit Process Modeling Program-RECIPE," Technical Digest of
International Electron Devices Meeting, IEEE Cat. No. 80CH1616-2,
pp. 227-230, December 1980.
38. B. Zetterlund and A.J. Steckl, "Low Temperature Recombination
Lifetime in Si MOSFET's," Technical Digest of International
Electron Devices Meeting, IEEE Cat. No. 80-CH1616-2, pp.
284-288, December 1980.
37. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain
Filters," General Electric Technical Information Series No. CRD293,
pp. 1-11, December 1980.
36. T.P. Chow, D.M. Brown, A.J. Steckl and M. Garfinkel, "Silane
Silicidation of Mo Thin Films," Journal of Applied Physics,
Vol. 51, pp. 5981-5985, November 1980.
35. T.P. Chow and A.J. Steckl, "Plasma Etching Characteristics of
Sputtered MoSi2
Films," Applied Physics Letters, Vol. 37, pp. 466-468,
September 1980. .
34. A.J. Steckl and G. Mohammed, "The Effect of Ambient
Atmosphere in the Annealing of Indium Tin Oxide Films," Journal
of Applied Physics, Vol. 51, pp. 3890-3895, July 1980.
33. H. Elabd and A.J. Steckl, "Auger Analysis of the PbS-Si
Heterojunction," Journal of Electronic Materials, Vol. 9,
pp. 525-549, 1980.
32. D.M. Brown, T.P. Chow and A.J. Steckl, "A Review of
Refractory Metal IC Technology-Past and Present," Proc. Custom
Integrated Circuits Conference, IEEE Cat. No. 80CH1562-8, pp.
85-86, May 1980.
31. A.J. Steckl and S.P. Sheu, "The AC Admittance of the p-n PbS-Si
Heterojunction," Solid State Electronics, Vol. 23, pp. 715-720,
1980.
30. A.J. Steckl and K.Y. Tam, "Bias and Temperature Dependence of
l/f Noise and Dark Current in the PbS-Si Heterojunction,"
Proceedings of International Conference on 1/f Noise, pp. 288-296, March
1980
29. M.E. Motamedi, K.Y. Tam and A.J. Steckl, "Design and
Evaluation of Ion Implanted CMOS Structures," IEEE Transactions
on Electron Devices, ED-27, pp. 578-583, March 1980.
28. T.P. Chow and A.J. Steckl, "Size Effects in MoSi2
Gate MOSFET's," Applied Physics Letters, Vol. 36, pp.
297-299, February 1980.
27. J.J. Tiemann, T.L. Vogelsong and A.J. Steckl, "Charge Domain
Recursive Filters," Technical Digest, IEEE International
Solid-State Circuits Conference, IEEE Cat. No. CH 1490-2/80,
pp. 96-97, February 1980.
26. A.J. Steckl, H. Elabd, K.Y. Tam, S.P. Sheu and M.E. Motamedi,
"The Optical and Detector Properties of the PbS-Si
Heterojunction," IEEE Transactions on Electron Devices, Vol. ED-27,
pp. 126-133, January 1980.
25. H. Elabd and A.J. Steckl, "Structural and Compositional
Properties of the PbS-Si Heterojunction," Journal of Applied
Physics, Vol. 51, pp. 726-737, January 1980.
24. H. Elabd, A.J. Steckl and W. Vidinski, "Effect of Substrate
Orientation on the Properties of the PbS-Si Heterojunction,"
Solar Cells Journal, Vol. 1, pp. 199-208, 1979/80.
23. A.J. Steckl, K.Y. Tam and M.E. Motamedi, "Read-Out
Characteristics of the PbS-Si HJ Detector," Technical Digest
IEDM, IEEE Cat. No. 79CH1504-OED, pp. 650-654, December 1979.
22. T.P. Chow and A.J. Steckl, "MoSi2
Gate MOSFETS for VLSI," Technical Digest IEDM, IEEE Cat. No. 79
CH1504-OED, pp. 458-461, December 1979.
21. A.J. Steckl, K.Y. Tam and M.E. Motamedi, "Direct Injection
Read-Out of PbS-Si Heterojunction Detector," Applied Physics
Letters, Vol. 35, pp. 537-539, October 1979.
20. H. Elabd, A.J. Steckl and W. Vidinski, "Effect of Substrate
Orientation on the Properties of the PbS-Si Heterojunction,"
Proc. Photovoltaic Material and Device Measurements Workshop, SERI/TP-49-185,
pp. 175-178, June 1979.
19. A.J. Steckl and M.E. Motamedi, "Study of the Low Temperature
Properties of Charge Coupled Devices," Proc. Microelectronics
Symposium, IEEE 79CH13685-4, pp. 57-62, May 1979. Reprinted
in Low Temperature Electronics, R. Kirchman, ed., IEEE Press,
NY, 1986.
18. M.E. Motamedi, K.Y. Tam and A.J. Steckl, "Custom Designed
CMOS for Infrared Signal Read-Out," Proc. Custom Integrated
Circuits Conference, pp. 62-65, May 1979.
17. S.P. Sheu and A.J. Steckl, "Frequency Characteristics of the
p-n PbS-Si Heterojunction Detector," Proc. International
Conference Infrared Physics, E. Affolter and F. Kneubuhl, eds., pp.
351-353, March 1979.
16. A.J. Steckl, M.E. Motamedi, S.P. Sheu, H. Elabd and K.Y. Tam,
"The PbSi-Si Heterojunction: A New Approach to Infrared Focal
Plane Array Integration," Proc. 1978 CCD Conference, pp.
239-251, October 1978.
15. A.J. Steckl, M.E. Motamedi and S.P. Sheu, "Current Mode
Operation of the p-n PbSi-Si Heterojunction Detector," Proc.
IRIS Meeting, 132900-4-X, pp. 401-413, June 1978.
14. A.J. Steckl, H. Elabd, And T.H. Jakobus, "p-n Anisotype
PbSi-Si Heterojunction Characteristics," Technical Digest of
International Electron Device Meeting, IEEE Cat. No. 77-CH1275-7ED,
pp. 549-553, December 1977.
13. A.J. Steckl, "IRCCD Imaging Sensors: A Review of Device
Options," Proc. of NATO/AGARD Symposium on Impact of CCD and
SAW on Signal Processing and Imaging in Advanced Systems, Y. Brault,
ed., Vol. CP-230, pp. 4.2.1-4.2.15, October 1977.
12. A.J. Steckl, "IR Detector Properties of the PbS-Si
Heterojunction," Proc. IRIS Meeting, Vol. C 127200-3X,
pp. 277-286, March 1977.
11. A.J. Steckl, "Infrared Charge Coupled Devices," Infrared
Physics, Vol. 12, pp. 65-73, January 1976.
10. A.J. Steckl, "Infrared Optical Properties of Sputtered In2-xSnxO3-y
Films," Infrared Physics, Vol. 16, pp. 145-147, January
1976.
9. A.J. Steckl, "Injection Efficiency in Monolithic and Hybrid
IRCCD's," Proceedings of 1975 International Conference on CCD
Applications, pp. 85-91, October 1975.
8. A.J. Steckl, "Low Temperature Silicon CCD Operation,"
Proceedings of 1975 International Conference on CCD Applications,
pp. 383-388, October 1975.
7. A.J. Steckl, "Infrared Properties of Sputtered In2-xSnxO3-y
Films," Conference Digest, International Conference on Infrared
Physics, E. Wiesendauger and F. Kneubuhl, eds., pp. 135-137, August
1975.
6. A.J. Steckl, "Charge Coupled Devices," Conference
Digest, International Conference on Infrared Physics, E.
Wiesendauger and F. Kneubuhl, eds., pp. 37-49, August 1975.
5. A.J. Steckl, R.D. Nelson, B.T. French, R.A. Gudmundsen and D.
Schechter, "Application of CCD's to Infrared Detection and
Imaging," Proc. of IEEE, Vol. 63, pp. 67-74, January
1975. Reprinted in Charge Coupled Devices: Technology and
Applications, R. Melen and D. Buss, eds., IEEE Press, J. Wiley
and Sons, 1977. Reprinted in Selected Papers on Semiconductor
Infrared Detectors, A. Rogolski, ed., SPIE Milestone Series,
Volume MS66, SPIE Optical Engineering Press, 1992.
4. A. J. Steckl and T. Koehler, "A Theoretical
Analysis of Directly Coupled 8-12µm Hybride IRCCD," Proceedings of 1973
CCD Applications Conference, p. 247, September 1973
3. A.J. Steckl and P. Das, "A Model of the Acoustoelectric
Oscillator," Proc. of 1972 Ultrasonics Symposium, IEEE Press,
Cat. No. 70CHO 708-8SU, p. 158, October 1972.
2. M.E. Arellano, P. Das and A.J. Steckl, "Acoustoelectric
Current Steps in Optically Polished Paralled CdS," Proc. of
1972 Ultrasonics Symposium, IEEE Press, Cat. No. 72CHO 708-8SU,
p. 168, October 1972.
1. P. Das and A.J. Steckl, "Current Oscillations in Optically
Polished and Parallel Plates of CdS," Applied Physics Letters,
Vol. 16, p. 163, 1970.
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