354.
J. Hite, G. T. Thaler, R. Khanna, C. R. Abernathy, S. J. Pearton, J.
H. Park, A. J. Steckl, J. M. Zavada, “Optical
and magnetic properties of Eu-doped GaN”, Appl. Phys. Lett., Vol. 89,
132119, 2006.
344. J. Hagen, W.
Li, A. J. Steckl, "Enhanced
emission efficiency in organic light-emitting diodes using
deoxyribonucleic acid complex as an electron blocking layer"
Appl. Phys. Lett. Vol.88, 171109, 2006.
(Some
pictures of this paper was selected as the cover pictures for this
issue)
341. J. H. Park and
A. J. Steckl, “Site specific
Eu3+ stimulated emission in GaN host”,
Appl. Phys. Lett., Vol. 88, 011111, 2005.
322. C. Munasinghe and A. J. Steckl,
"GaN:Eu
electroluminescent devices grown by interrupted growth epitaxy”,
Thin Solid Films, Vol. 496, pp.636-642, 2006.
330. J. H. Park and
A. J. Steckl, “Demonstration
of a visible laser on silicon using Eu-doped GaN thin films”,
J. Appl. Phys., Vol. 98, 056108, 2005.
328.
A. J. Steckl, J. Heikenfeld, and S. C. Allen, “Light
Wave Coupled Flat Panel Displays and Solid-State Lighting Using
Hybrid Inorganic/Organic Materials”,Invited Paper,
IEEE JDT Vol.1,
pp.157-166,
Sept. 2005.
323. J. Heikenfeld and A. J. Steckl,
"High-transmission electrowetting light
valves”, Appl. Phys. Lett. Vol. 86, 151121, Apr. 2005.
316. J. Heikenfeld and A. J. Steckl,
“Intense switchable fluorescence in light
wave coupled electrowetting devices”, Appl. Phys. Lett. Vol. 86
(1), 011105, Jan. 2005. (Some
pictures of this paper was selected as the cover pictures for this
issue)
312. J. H. Park and
A. J. Steckl, “Laser action in Eu-doped GaN thin film cavity at room
temperature”, Appl. Phys. Lett., Vol. 85 (20), pp. 4588-4590,
Nov. 2004.
