Atomic Layer Deposition

Cambridge NanoTech Inc.'s SAVANNAH 100, 4" 'ATOMIC LAYER DEPOSITION' system is equipped with 4 port precursor kit, vacuum pump, valves, heaters, pressure gauge, chamber, controller, and computer interface. Presently, it has TMA, DEZ, and H2O precursors. Pulses of these gases can be sent into the chamber in which samples are present. At elevated temperatures (can go up to 250°C), TMA and H2O react to form thin, dense atomic layers of Al2O3. Similarly, DEZ and H2O react to form thin ZnO layers. These layers could be used as thin dielectrics and transparent conductors respectively in various applications. Substrates should be able to withstand process temperatures and should not be larger than 4 inches in diameter.


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